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DMN2041L-7
+BOMMOSFET N-CH 20V 6.4A SOT23-3
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メーカーアナログ・デバイセズ
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メーカー品番 #DMN2041L-7
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データシート DMN2041L-7 DataSheet
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在庫状況3121
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 6.4A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 28mOhm @ 6A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15.6 nC @ 10 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 550 pF @ 10 V |
| Power Dissipation (Max) | 780mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
概要
Description
In a general sense, 'introduction' courses aim to provide foundational knowledge and skills, preparing students for more advanced study in the subject. They often cover fundamental principles, methodologies, and key concepts necessary to understand the discipline.
If you are considering enrolling in or required to take this course, I recommend checking with the offering institution for a detailed syllabus. This will provide specific information, including learning objectives, prerequisites, required materials, and evaluation methods, ensuring you understand what to expect and how to prepare effectively.
Equivalent
1. NXP's PMN20EN
2. Fairchild's FDN327N
3. ON Semiconductor's NTR4101PT1G
4. Vishay's SI2302DS
These equivalents match in terms of similar voltage, current ratings, and package type (commonly SOT-23). Always verify specific requirements and datasheets to ensure compatibility for your application.
Features
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of around 20V.
2. Current Capacity: The device can handle a continuous drain current (I_D) of approximately 4.3A.
3. Low On-Resistance: It features a low R_DS(on), which is essential for efficient performance and reduced power loss.
4. Gate-Source Voltage: The gate-source voltage (V_GS) rating is typically ±12V.
5. Package Type: It is commonly available in a compact SOT-23 package, making it suitable for space-constrained designs.
6. Thermal Performance: The MOSFET provides good thermal performance, suitable for applications requiring efficient heat dissipation.
7. Fast Switching Speed: This feature is beneficial for high-frequency applications, improving overall circuit efficiency.
8. Applications: It is ideal for use in load switching, DC-DC converters, and other small signal switching applications.
These features make the DMN2041L-7 a versatile component for various electronic applications requiring efficient power management.
Pinout
1. Gate (G): The gate pin is responsible for controlling the MOSFET. A voltage applied here enables the flow of current between the drain and source.
2. Source (S): The source pin is where current enters the MOSFET in the case of an N-channel MOSFET like the DMN2041L-7.
3. Drain (D): The drain pin is where current exits the MOSFET. When the gate voltage exceeds the threshold, a conductive path is established between the drain and source.
The DMN2041L-7 is designed for low voltage and low current applications, showcasing fast switching speeds and low on-state resistance, making it suitable for use in battery-powered devices, load switching, and other compact electronic applications.