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DMN2400UV-7
+BOMMOSFET 2N-CH 20V 1.33A SOT563
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メーカーアナログ・デバイセズ
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メーカー品番 #DMN2400UV-7
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データシート DMN2400UV-7 DataSheet
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パッケージ SOT-666
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在庫状況5078
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 1.33A |
| RdsOn(Max)@IdVgs | 480mOhm @ 200mA, 5V |
| Vgs(th)(Max)@Id | 900mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.5nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 36pF @ 16V |
| Power-Max | 530mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
概要
Description
The DMN2400UV-7 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) often used in electronic circuits for switching and amplification applications. It is designed for low voltage operations and typically features characteristics such as low on-resistance and fast switching speeds, which make it suitable for use in power management applications, including DC-DC converters, load switches, and battery management systems.
Key features of the DMN2400UV-7 may include:
1. Low On-Resistance: This allows for efficient current flow and reduces power loss, enhancing the overall performance of electronic devices.
2. Fast Switching Speed: Enables quick response times, which is crucial for applications requiring high-speed operation.
3. Compact Package: Often available in a small form factor, which is ideal for space-constrained applications.
4. Enhanced Thermal Performance: Can handle higher power levels while maintaining stable operation.
The DMN2400UV-7 is typically utilized in devices that require efficient power usage and space-saving components, making it a versatile choice in modern electronic designs.
Key features of the DMN2400UV-7 may include:
1. Low On-Resistance: This allows for efficient current flow and reduces power loss, enhancing the overall performance of electronic devices.
2. Fast Switching Speed: Enables quick response times, which is crucial for applications requiring high-speed operation.
3. Compact Package: Often available in a small form factor, which is ideal for space-constrained applications.
4. Enhanced Thermal Performance: Can handle higher power levels while maintaining stable operation.
The DMN2400UV-7 is typically utilized in devices that require efficient power usage and space-saving components, making it a versatile choice in modern electronic designs.
Equivalent
The DMN2400UV-7 is a dual N-channel MOSFET. Equivalent products include:
1. BSN20 - NXP Semiconductors
2. FDN340P - ON Semiconductor
3. 2N7002 - NXP Semiconductors
4. 2SK3018 - Toshiba
5. IRLML2402 - Infineon
These alternatives have similar specifications but should be cross-checked for specific applications and parameters. Always refer to the datasheets for compatibility.
1. BSN20 - NXP Semiconductors
2. FDN340P - ON Semiconductor
3. 2N7002 - NXP Semiconductors
4. 2SK3018 - Toshiba
5. IRLML2402 - Infineon
These alternatives have similar specifications but should be cross-checked for specific applications and parameters. Always refer to the datasheets for compatibility.
Features
The DMN2400UV-7 is a type of surface-mount MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in electronic circuits for switching and amplifying electronic signals. Here are some of its features:
1. Type: N-channel MOSFET.
2. Voltage Rating: The device offers a drain-source voltage (V_DS) of 20V.
3. Current Rating: It can handle continuous drain current (I_D) up to 1.6A.
4. R_DS(on): It has a low on-state resistance, typically around 0.09 ohms, which improves efficiency.
5. Gate Voltage: Operates typically with a gate threshold voltage (V_GS) around 1V to 3V.
6. Package Type: Comes in a compact SOT-23 package, suitable for high-density PCB designs.
7. Thermal Management: Its design allows efficient heat dissipation, supporting performance stability.
8. Applications: Ideal for load switches, power management in portable devices, DC-DC converters, and more.
These features make the DMN2400UV-7 a versatile component in various electronic applications, especially where space and efficiency are critical.
1. Type: N-channel MOSFET.
2. Voltage Rating: The device offers a drain-source voltage (V_DS) of 20V.
3. Current Rating: It can handle continuous drain current (I_D) up to 1.6A.
4. R_DS(on): It has a low on-state resistance, typically around 0.09 ohms, which improves efficiency.
5. Gate Voltage: Operates typically with a gate threshold voltage (V_GS) around 1V to 3V.
6. Package Type: Comes in a compact SOT-23 package, suitable for high-density PCB designs.
7. Thermal Management: Its design allows efficient heat dissipation, supporting performance stability.
8. Applications: Ideal for load switches, power management in portable devices, DC-DC converters, and more.
These features make the DMN2400UV-7 a versatile component in various electronic applications, especially where space and efficiency are critical.
Pinout
The DMN2400UV-7 is a type of N-channel MOSFET used for switching applications. It typically comes in a small surface-mount package, such as the SOT-523. The pin count for this package is generally 3 pins. Here's a brief description of its pins:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate pin allows current to flow between the drain and source.
2. Source (S): This pin is where the charge carriers (usually electrons in an N-channel MOSFET) enter the MOSFET. The source is typically connected to the ground in N-channel configurations.
3. Drain (D): This pin is where the charge carriers exit the MOSFET. The drain is typically connected to the load in a switching application.
These pins facilitate the basic operation of the MOSFET, allowing it to act as an electronic switch or amplifier in various circuit applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate pin allows current to flow between the drain and source.
2. Source (S): This pin is where the charge carriers (usually electrons in an N-channel MOSFET) enter the MOSFET. The source is typically connected to the ground in N-channel configurations.
3. Drain (D): This pin is where the charge carriers exit the MOSFET. The drain is typically connected to the load in a switching application.
These pins facilitate the basic operation of the MOSFET, allowing it to act as an electronic switch or amplifier in various circuit applications.
Manufacturer
The DMN2400UV-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a global semiconductor company that designs, manufactures, and supplies a broad range of semiconductor products. Their offerings include discrete, analog, mixed-signal products, and semiconductor components that cater to a wide array of applications in the consumer electronics, computing, communications, industrial, and automotive markets. The company is known for its high-volume production and strong focus on quality and innovation, catering to the needs of diverse markets worldwide.
Application
The DMN2400UV-7 is a N-channel enhancement mode MOSFET typically used in applications that require efficient power management and switching. These include DC-DC converters, load switches, and battery management systems. It is also suitable for use in portable electronics, LED drivers, and power supply circuits where space is limited and high efficiency is critical. Its small form factor and low on-resistance make it ideal for use in compact or miniature electronic devices.
Package
The DMN2400UV-7 is a MOSFET transistor housed in a SOT-963 package. This package type is ultra-small, suitable for compact electronic designs, and supports surface-mount technology, making it ideal for high-density circuit board layouts.
