DMN3190LDW-7

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DMN3190LDW-7

+BOM

MOSFET 2N-CH 30V 1A SOT363

  • メーカーアナログ・デバイセズ

  • メーカー品番 #DMN3190LDW-7

  • データシート DMN3190LDW-7 DataSheet

  • パッケージ SC-88

  • 在庫状況27195

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 1A
RdsOn(Max)@IdVgs 190mOhm @ 1.3A, 10V
Vgs(th)(Max)@Id 2.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 2nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 87pF @ 20V
Power-Max 320mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

概要

Description

The DMN3190LDW-7 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. It is designed to operate in low-voltage applications, with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 3.5A per channel. This component is known for its low on-resistance and high efficiency, making it suitable for applications requiring fast switching and low power consumption, such as in power management circuits and motor controls.
The DMN3190LDW-7 comes in a compact, surface-mount package, specifically the SO-8 package, which makes it ideal for use in space-constrained designs. Its dual configuration allows for more efficient use of board space and reduced component count in designs requiring multiple MOSFETs. Additionally, it is designed to be lead-free and RoHS compliant, adhering to environmental and safety standards.
Overall, the DMN3190LDW-7 is a versatile and efficient choice for engineers looking for reliable MOSFET solutions in various electronic applications.

Equivalent

The DMN3190LDW-7 is a dual N-channel MOSFET. Equivalent products include the BSS138DW from Infineon or Vishay's SiA912EDJ. These alternatives should have similar specifications, such as voltage, current ratings, and package type. Always verify the specific electrical characteristics like Rds(on), Vgs, and switching speed to ensure compatibility with your application.

Features

The DMN3190LDW-7 is a dual N-channel MOSFET transistor designed for efficient power management. Here are its key features:
1. Configuration: Dual N-channel, providing two MOSFETs in a single package.
2. Drain-Source Voltage (Vds): Typically rated at 30V, making it suitable for low to medium voltage applications.
3. Continuous Drain Current (Id): Can handle a current of up to 5.1A (with proper heat management).
4. Rds(on): Low on-resistance, typically around 39mΩ at Vgs = 10V, which ensures minimal power loss.
5. Gate-Source Voltage (Vgs): Rated ±20V, offering robust gate drive capabilities.
6. Package Type: Housed in a compact DFN2020 package, which supports high-density designs.
7. Thermal Performance: Efficient thermal characteristics due to the low profile and exposed pad design, aiding heat dissipation.
8. Applications: Suitable for DC-DC converters, load switching, and battery management applications.
These features make the DMN3190LDW-7 a versatile choice for applications requiring efficient power management and compact design.

Pinout

The DMN3190LDW-7 is a dual N-channel MOSFET housed in a small-outline SOT-363 package. It features a total of 6 pins. The primary function of this component is to serve as an efficient switch or amplifier in various electronic circuits. It is often used in power management applications, including DC-DC converters, load switches, and other similar uses where space is a constraint and efficient switching is required. Each channel (MOSFET) within the package is used for switching and can handle specific voltage and current levels as specified in its datasheet.

Manufacturer

The DMN3190LDW-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company serves diverse end-user markets including consumer electronics, computing, communications, industrial, and automotive. Diodes Incorporated focuses on delivering semiconductor solutions that meet the ever-evolving needs of the electronics market, ensuring high-performance and efficient products.

Application

The DMN3190LDW-7 is a dual n-channel MOSFET commonly used in applications requiring efficient switching and amplification. Typical application areas include:
1. Power Management: Used in voltage regulators and power supply circuits for efficient energy conversion.
2. Load Switches: Acts as an electronic switch to control power delivery to various components.
3. DC-DC Converters: Facilitates efficient voltage level conversion in portable electronics.
4. Battery Management Systems: Offers protection and control in battery-powered devices.
5. Consumer Electronics: Utilized in devices such as smartphones and tablets for power management and signal switching.
Its low on-resistance and fast switching capabilities make it suitable for these applications.

Package

The DMN3190LDW-7 is packaged in a DFN2020 (also known as a PowerDI®323) package. This is a small, surface-mount package designed for efficient thermal performance and space-saving on printed circuit boards.

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