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DMP2022LSS-13
+BOMMOSFET P-CH 20V 10A 8SOP
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メーカーアナログ・デバイセズ
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メーカー品番 #DMP2022LSS-13
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データシート DMP2022LSS-13 DataSheet
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在庫状況5384
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 13mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 1.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 56.9 nC @ 10 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 2444 pF @ 10 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
概要
Description
"DMP2022LSS-13" likely refers to a specific course, module, or event. Without additional context, I can provide a general framework for what an introduction might entail.
The introduction to DMP2022LSS-13 would typically cover the following aspects:
1. Overview: Briefly describe the purpose and scope of the course or module, highlighting its relevance in the current educational or professional landscape.
2. Objectives: Outline the main goals, including skills or knowledge participants are expected to gain by the end.
3. Content Structure: Explain the key topics or units that will be addressed, emphasizing any particular focus areas or themes.
4. Methodology: Describe the teaching methods employed, such as lectures, workshops, practical sessions, or online modules.
5. Assessment: Provide an overview of the evaluation methods used to measure progress and understanding, such as exams, projects, or continuous assessment.
6. Target Audience: Identify who the course is intended for, such as students, professionals, or specific industry sectors.
For precise information about DMP2022LSS-13, please refer to official course materials or institutional resources.
The introduction to DMP2022LSS-13 would typically cover the following aspects:
1. Overview: Briefly describe the purpose and scope of the course or module, highlighting its relevance in the current educational or professional landscape.
2. Objectives: Outline the main goals, including skills or knowledge participants are expected to gain by the end.
3. Content Structure: Explain the key topics or units that will be addressed, emphasizing any particular focus areas or themes.
4. Methodology: Describe the teaching methods employed, such as lectures, workshops, practical sessions, or online modules.
5. Assessment: Provide an overview of the evaluation methods used to measure progress and understanding, such as exams, projects, or continuous assessment.
6. Target Audience: Identify who the course is intended for, such as students, professionals, or specific industry sectors.
For precise information about DMP2022LSS-13, please refer to official course materials or institutional resources.
Equivalent
The DMP2022LSS-13 is a P-channel MOSFET manufactured by Diodes Incorporated. Equivalent products to consider include:
1. AO3407A by Alpha & Omega Semiconductor.
2. SI2301 by Vishay.
3. IRF9530 by Infineon Technologies.
4. NTJS3151P by ON Semiconductor.
5. FDS6679AZ by ON Semiconductor.
These equivalents are selected based on similar voltage and current ratings. However, always verify the specifications and pin configuration to ensure compatibility with your application.
1. AO3407A by Alpha & Omega Semiconductor.
2. SI2301 by Vishay.
3. IRF9530 by Infineon Technologies.
4. NTJS3151P by ON Semiconductor.
5. FDS6679AZ by ON Semiconductor.
These equivalents are selected based on similar voltage and current ratings. However, always verify the specifications and pin configuration to ensure compatibility with your application.
Pinout
The DMP2022LSS-13 is a P-channel MOSFET designed for general-purpose switching applications. It typically comes in a small, surface-mount SOT-23 package. The pin count for this MOSFET is 3, corresponding to the standard SOT-23 pin configuration. The functions of these pins are as follows:
1. Gate: This pin is used to control the MOSFET. Applying a voltage to the gate regulates the conductance between the source and drain.
2. Source: The source pin is one of the two main current-carrying terminals. For a P-channel MOSFET, the source is typically connected to a more positive voltage.
3. Drain: The drain pin is the second current-carrying terminal. Current flows from source to drain when the MOSFET is active.
The DMP2022LSS-13 is commonly used in power management, load switching, and other applications requiring efficient switching capabilities in a compact form factor.
1. Gate: This pin is used to control the MOSFET. Applying a voltage to the gate regulates the conductance between the source and drain.
2. Source: The source pin is one of the two main current-carrying terminals. For a P-channel MOSFET, the source is typically connected to a more positive voltage.
3. Drain: The drain pin is the second current-carrying terminal. Current flows from source to drain when the MOSFET is active.
The DMP2022LSS-13 is commonly used in power management, load switching, and other applications requiring efficient switching capabilities in a compact form factor.
Manufacturer
The DMP2022LSS-13 is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of high-quality discrete, logic, analog, and mixed-signal semiconductors. The company caters to a wide range of applications across the automotive, industrial, computing, consumer electronics, and communications markets. Diodes Incorporated is well-regarded for its extensive product portfolio and continuous innovation in the semiconductor industry.
Package
The DMP2022LSS-13 is typically housed in a leadless surface-mount package, often referred to as a DFN (Dual Flat No-leads) or QFN (Quad Flat No-leads) package. This type of packaging is compact, facilitating efficient heat dissipation and electrical performance, making it suitable for densely packed electronic circuits.
