EPC2065

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EPC2065

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GAN FET 80V .0036OHM 8BUMP DIE

  • メーカービシェイ社

  • メーカー品番 #EPC2065

  • データシート EPC2065 DataSheet

  • 在庫状況8722

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仕様

属性 値
Series eGaN®
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 12.2 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1449 pF @ 40 V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Base Product Number EPC20

概要

Description

EPC2065, often a course title in engineering or related fields, typically focuses on advanced concepts in engineering principles, design, and applications. This course may cover topics such as systems engineering, project management, and the integration of technology in engineering processes. Students may engage in hands-on projects, case studies, and collaborative work to enhance their understanding of real-world engineering challenges.
The curriculum often emphasizes critical thinking, problem-solving skills, and the application of theoretical knowledge to practical scenarios. Additionally, students may explore emerging trends in engineering, sustainability practices, and innovation strategies.
Overall, EPC2065 aims to equip students with the necessary tools and knowledge to excel in engineering roles and contribute effectively to the industry.

Equivalent

The EPC2065 chip is an eGaN FET designed for power management applications. Equivalent products include the EPC2066 and EPC2014, which also feature similar performance specifications in terms of voltage ratings and on-resistance. Other alternatives may include comparable GaN FETs from manufacturers like GaN Systems and Infineon. Always verify the specific application requirements to ensure compatibility.

Features

The EPC2065 is a high-performance, low-power GaN (Gallium Nitride) power amplifier designed for various applications, including wireless communication systems. Key features include:
1. Frequency Range: Operates efficiently in the 1.8 GHz to 2.2 GHz range, suitable for LTE and 5G applications.
2. Output Power: Delivers high output power with good linearity, enabling robust signal transmission.
3. Efficiency: Exhibits high power efficiency, reducing thermal management challenges and enhancing battery life for portable devices.
4. Small Size: Compact packaging allows for easy integration into small form-factor designs.
5. Thermal Performance: Improved thermal characteristics ensure reliability under varying operating conditions.
6. Voltage Supply: Operates on a single positive voltage supply, simplifying design and reducing component count.
7. Versatility: Can be utilized in different configurations, making it suitable for base stations, small cells, and other RF applications.
These features make the EPC2065 an attractive choice for next-generation communication systems.

Pinout

The EPC2065 is a high-performance 65V GaN FET (gallium nitride field-effect transistor) designed for power management applications. It features a pin count of 8.
The pin functions are as follows:
1. G - Gate: Controls the switching of the device.
2. D - Drain: Connects to the load.
3. S - Source: Connects to the ground or negative side of the power supply.
4. GND - Ground: Common reference point for the circuit.
5. VDD - Supply Voltage: Provides power to the driver circuitry.
6. VOUT - Output Voltage: Output terminal for the switched load.
7. VGS - Gate-Source Voltage: Monitors the voltage applied to the gate.
8. NC - No Connection: Not used and should be left open.
This device is suitable for various applications, including power converters, telecom, and industrial power systems, due to its high efficiency and fast switching capabilities.

Manufacturer

The EPC2065 is manufactured by EPC (Efficient Power Conversion Corporation). EPC is a semiconductor company that specializes in the development and production of gallium nitride (GaN) power devices. Founded in 2007 and based in El Segundo, California, EPC focuses on providing high-efficiency power conversion solutions for a variety of applications, including data centers, electric vehicles, and consumer electronics. The company’s GaN technology allows for smaller, lighter, and more efficient power systems compared to traditional silicon-based solutions. EPC's products are designed to enable advancements in power density and efficiency, catering to the growing demands of modern electronic systems.

Application

EPC2065 is a high-efficiency, low-power, integrated power management IC commonly used in various applications, including:
1. Consumer Electronics: Powering smartphones, tablets, and wearables.
2. IoT Devices: Providing energy management for smart sensors and connected devices.
3. Industrial Automation: Supporting automation equipment with optimized power solutions.
4. Automotive: Managing power in advanced driver-assistance systems (ADAS) and infotainment systems.
5. Medical Devices: Ensuring reliable power for portable and implantable devices.
Its versatility enables efficient operation across diverse sectors requiring reliable power management.

Package

The EPC2065 is typically packaged in a 48-pin QFN (Quad Flat No-lead) form factor, allowing for a compact design suitable for various electronic applications. This packaging provides good thermal performance and minimizes the footprint on the PCB.

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