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FCP190N60E
+BOMMOSFET N-CH 600V 20.6A TO220-3
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メーカーオンセミコンダクター社
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メーカー品番 #FCP190N60E
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データシート FCP190N60E DataSheet
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在庫状況5968
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仕様
| 属性 | 値 |
| Series | SuperFET® II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3175 pF @ 25 V |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | FCP190 |
概要
Description
The FCP190N60E is a high-performance N-channel power MOSFET designed for various applications, including power management and switching. It features a voltage rating of 600 volts and a continuous drain current of up to 190 amperes, making it suitable for high-voltage and high-current applications.
Key characteristics include low on-resistance, which minimizes conduction losses, and fast switching capabilities, enhancing efficiency in power conversion circuits. The device operates well in environments with high thermal demands, supported by its robust package design, which aids in heat dissipation.
Common applications include power supplies, electric vehicles, industrial automation, and renewable energy systems. The FCP190N60E is often favored in designs requiring high reliability and efficiency, contributing to the overall performance of power electronics systems.
When using this MOSFET, proper thermal management and gate drive considerations are essential to ensure optimal operation and longevity.
Key characteristics include low on-resistance, which minimizes conduction losses, and fast switching capabilities, enhancing efficiency in power conversion circuits. The device operates well in environments with high thermal demands, supported by its robust package design, which aids in heat dissipation.
Common applications include power supplies, electric vehicles, industrial automation, and renewable energy systems. The FCP190N60E is often favored in designs requiring high reliability and efficiency, contributing to the overall performance of power electronics systems.
When using this MOSFET, proper thermal management and gate drive considerations are essential to ensure optimal operation and longevity.
Equivalent
The FCP190N60E is an N-channel MOSFET with a 600V rating and 190A continuous current. Equivalent products include:
1. IRF320 (600V, 200A)
2. STP190N60M2 (600V, 190A)
3. IXFH35N60P (600V, 35A)
4. RFD190N60 (600V, 190A)
Always verify specifications such as RDS(on), package type, and thermal characteristics for compatibility.
1. IRF320 (600V, 200A)
2. STP190N60M2 (600V, 190A)
3. IXFH35N60P (600V, 35A)
4. RFD190N60 (600V, 190A)
Always verify specifications such as RDS(on), package type, and thermal characteristics for compatibility.
Features
The FCP190N60E is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a breakdown voltage of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current of up to 190A, providing significant power handling capability.
3. Low On-Resistance: With a low RDS(on) value, it ensures minimal conduction losses, enhancing efficiency in power conversion.
4. Fast Switching Speed: Its design enables rapid switching, which is beneficial for high-frequency applications.
5. Thermal Stability: The MOSFET exhibits good thermal performance, allowing it to operate effectively in various thermal conditions.
6. Applications: It is suitable for use in switch-mode power supplies, motor drives, and other high-power conversion systems.
These features make the FCP190N60E an ideal choice for efficient and reliable power management solutions.
1. Voltage Rating: It has a breakdown voltage of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current of up to 190A, providing significant power handling capability.
3. Low On-Resistance: With a low RDS(on) value, it ensures minimal conduction losses, enhancing efficiency in power conversion.
4. Fast Switching Speed: Its design enables rapid switching, which is beneficial for high-frequency applications.
5. Thermal Stability: The MOSFET exhibits good thermal performance, allowing it to operate effectively in various thermal conditions.
6. Applications: It is suitable for use in switch-mode power supplies, motor drives, and other high-power conversion systems.
These features make the FCP190N60E an ideal choice for efficient and reliable power management solutions.
Pinout
The FCP190N60E is a power MOSFET with a total of 6 pins. The functions of the pins are as follows:
1. Gate (G) - Pin for controlling the MOSFET; applies voltage to turn the device on or off.
2. Drain (D) - The terminal where the load connects; current flows from drain to source when the MOSFET is on.
3. Source (S) - The terminal connected to ground or the negative side of the circuit; current flows out of the source when the MOSFET is conducting.
4. Gate (G) - Duplicate pin for gate connection to facilitate layout and design.
The FCP190N60E is designed for high-voltage applications, featuring a maximum drain-source voltage of 600V and a continuous drain current rating of 190A. This makes it suitable for use in power supplies, motor drives, and other high-power applications.
1. Gate (G) - Pin for controlling the MOSFET; applies voltage to turn the device on or off.
2. Drain (D) - The terminal where the load connects; current flows from drain to source when the MOSFET is on.
3. Source (S) - The terminal connected to ground or the negative side of the circuit; current flows out of the source when the MOSFET is conducting.
4. Gate (G) - Duplicate pin for gate connection to facilitate layout and design.
The FCP190N60E is designed for high-voltage applications, featuring a maximum drain-source voltage of 600V and a continuous drain current rating of 190A. This makes it suitable for use in power supplies, motor drives, and other high-power applications.
Manufacturer
The FCP190N60E is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is a global company that specializes in the design, manufacturing, and marketing of a wide range of semiconductor products. Founded in 1957, it has a long history in the electronics industry, focusing on innovation in power management, analog, and mixed-signal devices.
Fairchild is known for its expertise in power efficiency and high-performance solutions for various applications, including automotive, industrial, and consumer electronics. The acquisition by ON Semiconductor in 2016 expanded ON's portfolio, strengthening its position in the power semiconductor market.
Overall, Fairchild, as part of ON Semiconductor, continues to cater to the growing demand for efficient and reliable semiconductor solutions across multiple sectors, emphasizing high-performance technology and customer-centric approaches.
Fairchild is known for its expertise in power efficiency and high-performance solutions for various applications, including automotive, industrial, and consumer electronics. The acquisition by ON Semiconductor in 2016 expanded ON's portfolio, strengthening its position in the power semiconductor market.
Overall, Fairchild, as part of ON Semiconductor, continues to cater to the growing demand for efficient and reliable semiconductor solutions across multiple sectors, emphasizing high-performance technology and customer-centric approaches.
Application
The FCP190N60E is a N-channel MOSFET commonly used in various applications, including power supplies, motor drives, and high-voltage switching circuits. Its features make it suitable for use in automotive applications, industrial automation, and renewable energy systems such as solar inverters. The device's high voltage and current ratings enable efficient operation in power conversion and amplification tasks. Additionally, it's utilized in uninterruptible power supplies (UPS) and lighting control systems. Overall, the FCP190N60E is ideal for environments requiring robust performance and reliability in managing high power levels.
Package
The FCP190N60E is typically available in an TO-247 package type, which is a through-hole package commonly used for high-power applications. This package configuration allows for efficient heat dissipation and easy mounting on heatsinks.
