FCP20N60

画像は参考用です

FCP20N60

+BOM

MOSFET N-CH 600V 20A TO220-3

  • メーカーオンセミコンダクター社

  • メーカー品番 #FCP20N60

  • データシート FCP20N60 DataSheet

  • 在庫状況5315

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Supplier Rochester Electronics, LLC,onsemi
Package / Case Bulk,Tube
Series SuperFET™
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 20A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 190mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 98 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 3080 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

概要

Description

The FCP20N60 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is part of the Insulated Gate Bipolar Transistor (IGBT) technology family, often used in power management and inverter designs. The "20N60" in its name typically denotes its specifications: it can handle a maximum drain-source voltage (V_DS) of 600 volts and a continuous drain current (I_D) of up to 20 amperes.
This MOSFET is characterized by its low on-resistance and fast switching capabilities, which enhance efficiency in power conversion systems. It is commonly used in applications such as motor drives, power supplies, and lighting. The FCP20N60 offers features like high avalanche energy rating, robust gate oxide technology, and thermal stability, ensuring reliability under demanding conditions. Its design helps minimize energy losses and heat generation, making it suitable for both industrial and consumer electronics.

Equivalent

The FCP20N60 is a 600V N-channel MOSFET. Equivalent products include the IRFP460, STP20NM60, and NTP60N20. When selecting an equivalent, ensure it matches key parameters such as voltage rating, current capacity, and package type. Always verify with the datasheet to confirm compatibility for your specific application.

Features

The FCP20N60 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. Key features include:
1. Voltage Rating: It supports a high drain-source voltage (V_DS) of 600V, suitable for demanding applications requiring significant voltage tolerance.
2. Current Handling: Capable of handling a continuous drain current (I_D) of 20A at a temperature of 25°C, enabling it to manage a substantial load.
3. R_DS(on): It has a low on-state resistance, typically around 0.19 ohms, which minimizes power loss and improves efficiency during operation.
4. Enhanced Performance: The device features fast switching capabilities, which are crucial for reducing switching losses and improving the efficiency of power conversion systems.
5. Thermal Characteristics: Designed with robust thermal performance to handle high power dissipation, often supported by a TO-220 package for effective heat dissipation.
6. Applications: Commonly used in applications such as power supplies, motor control, and other high-voltage power conversion systems due to its efficiency and reliability.
These features make the FCP20N60 a suitable choice for engineers looking for a reliable component in high-voltage, high-current applications.

Pinout

The FCP20N60 is a power MOSFET, specifically designed for high-speed switching applications. It typically comes in a TO-220 package, which is a common configuration for power transistors. This package generally has three pins:
1. Gate (G): Used to control the state of the MOSFET; a voltage applied here allows current to flow between the drain and source.

2. Drain (D): The terminal where the load is connected, and through which the controlled current flows from the source when the MOSFET is on.
3. Source (S): The terminal that connects to the ground or negative side of the load circuit.
The FCP20N60 is designed for high-voltage and high-current applications, with a typical voltage rating of 600V and a current rating of 20A. It is used in various applications like power supplies, motor drives, and other high-efficiency power conversion applications.

Manufacturer

The FCP20N60 is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor supplier that specializes in designing and manufacturing a wide range of semiconductor components. The company provides products and solutions for automotive, industrial, cloud power, and IoT markets, among others. They focus on energy-efficient innovations, helping to efficiently manage power in various electronic systems.

Application

The FCP20N60 is a power MOSFET often used in applications requiring efficient power management and control. Common application areas include:
1. Power Supplies: Used in switch mode power supplies (SMPS) for improved efficiency.
2. Motor Drives: Suitable for motor control in industrial and consumer electronics.
3. Inverters: Used in inverter circuits for energy conversion in solar and renewable energy systems.
4. Lighting: Integrated into lighting ballasts and LED drivers.
5. Battery Chargers: Employed in battery charging circuits for energy-efficient charging solutions.
Its high voltage capability and low on-resistance make it ideal for these high-performance and high-efficiency applications.

Package

The FCP20N60 is an N-channel MOSFET, and it typically comes in a TO-220 package. This package type is common for power transistors, providing a good balance between size, heat dissipation, and ease of mounting on circuit boards.

FCP20N60に関連する製品