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FDA59N25
+BOMMOSFET N-CH 250V 59A TO3PN
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メーカーオンセミコンダクター社
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メーカー品番 #FDA59N25
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データシート FDA59N25 DataSheet
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在庫状況5467
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仕様
| 属性 | 値 |
| Series | UniFET™ |
| Part Status | Active |
| Base Product Number | FDA59 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 29.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020 pF @ 25 V |
| Power Dissipation (Max) | 392W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tube |
概要
Description
FDA59N25 is a designation that typically refers to a specific FDA (Food and Drug Administration) regulatory guideline or classification, but it does not directly correspond to any widely recognized regulation or product. It may involve topics related to the FDA's oversight on food and drug safety, specifically in relation to new drug applications, medical devices, or food products.
If you are looking for information on a particular drug, device, or regulation with a similar name, it could be a case number or designation for a specific application or product under review by the FDA. For the most accurate and detailed information, it is advisable to consult the FDA's official website or relevant databases where they publish the latest updates on drug approvals, guidelines, and regulations.
If you are looking for information on a particular drug, device, or regulation with a similar name, it could be a case number or designation for a specific application or product under review by the FDA. For the most accurate and detailed information, it is advisable to consult the FDA's official website or relevant databases where they publish the latest updates on drug approvals, guidelines, and regulations.
Equivalent
Equivalent products to the FDA59N25 chip include the FDA59N20, FDA59N30, and FDA59N35. Additionally, look for other manufacturers’ products like the IRF540, STP55NF06, and BUK5M65-100. Always verify specifications such as voltage, current, and package type to ensure compatibility.
Features
The FDA59N25 is a high-performance, N-channel MOSFET designed for use in various power applications. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of around 25V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain currents, often in the range of several amperes (usually around 59A).
3. Rds(on): Low on-resistance (Rds(on)), which minimizes power loss during operation and improves efficiency.
4. Gate Threshold Voltage (Vgs(th)): Designed to work with low gate voltages, allowing for easy interfacing with microcontrollers and other logic devices.
5. Fast Switching: Optimized for fast switching speeds, which is beneficial for applications like DC-DC converters and motor drivers.
6. Thermal Performance: May feature a robust package for better heat dissipation, enhancing reliability under load.
Overall, the FDA59N25 is ideal for applications requiring efficient power management and thermal stability.
1. Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of around 25V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain currents, often in the range of several amperes (usually around 59A).
3. Rds(on): Low on-resistance (Rds(on)), which minimizes power loss during operation and improves efficiency.
4. Gate Threshold Voltage (Vgs(th)): Designed to work with low gate voltages, allowing for easy interfacing with microcontrollers and other logic devices.
5. Fast Switching: Optimized for fast switching speeds, which is beneficial for applications like DC-DC converters and motor drivers.
6. Thermal Performance: May feature a robust package for better heat dissipation, enhancing reliability under load.
Overall, the FDA59N25 is ideal for applications requiring efficient power management and thermal stability.
Pinout
The FDA59N25 is a N-channel MOSFET used in power applications. It typically comes in a TO-220 package, which has a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): This pin is where the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the reference point for the voltage applied to the gate.
The FDA59N25 is known for its high voltage and current handling capabilities, making it suitable for various applications in power management and switching.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): This pin is where the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the reference point for the voltage applied to the gate.
The FDA59N25 is known for its high voltage and current handling capabilities, making it suitable for various applications in power management and switching.
Manufacturer
The FDA59N25 is manufactured by NXP Semiconductors, a global semiconductor company. NXP is known for its focus on secure connectivity solutions for embedded applications, including automotive, industrial, and IoT markets. The company designs and produces a wide range of products, including microcontrollers, processors, and RF solutions, catering to various industries such as automotive, mobile, and consumer electronics. NXP is recognized for its innovation in technologies that enable secure communication and processing, aligning with trends like smart cities and connected vehicles.
Application
The FDA59N25 is a high-performance insulated gate bipolar transistor (IGBT) primarily used in power electronics applications. Key application areas include:
1. Motor Drives: Used in industrial and HVAC applications for controlling electric motors.
2. Renewable Energy: Employed in solar inverters and wind turbine converters.
3. Power Supplies: Utilized in high-efficiency switching power supplies and converters.
4. Welding Equipment: Applied in induction and resistance welding systems.
5. Railway Systems: Used in traction drives for electric trains and trams.
6. UPS Systems: Incorporated in uninterruptible power supplies for reliable energy backup.
Its efficiency and thermal performance make it suitable for high-power applications.
1. Motor Drives: Used in industrial and HVAC applications for controlling electric motors.
2. Renewable Energy: Employed in solar inverters and wind turbine converters.
3. Power Supplies: Utilized in high-efficiency switching power supplies and converters.
4. Welding Equipment: Applied in induction and resistance welding systems.
5. Railway Systems: Used in traction drives for electric trains and trams.
6. UPS Systems: Incorporated in uninterruptible power supplies for reliable energy backup.
Its efficiency and thermal performance make it suitable for high-power applications.
Package
The FDA59N25 is packaged in a 25-pin D-subminiature connector format. This configuration is commonly used for connecting electronic components in various applications, providing a standardized interface.
