FDB024N08BL7

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FDB024N08BL7

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MOSFET N-CH 80V 120A TO263-7

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  • メーカー品番 #FDB024N08BL7

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仕様

属性 値
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13530 pF @ 40 V
Power Dissipation (Max) 246W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number FDB024

概要

Description

The FDB024N08BL7 is a high-performance N-channel MOSFET designed for various applications, including power management, switching, and amplifier circuits. It features a low on-resistance, allowing for efficient conduction and reduced power loss. The device is rated for a maximum drain-source voltage of 80V and a continuous drain current of up to 24A, making it suitable for medium to high-power applications.
Key specifications include a low gate threshold voltage, fast switching speeds, and robust thermal performance, which contribute to its reliability in demanding environments. The FDB024N08BL7 is often used in applications such as DC-DC converters, motor drivers, and power inverters.
It comes in a TO-220 package, which provides effective heat dissipation and ease of mounting. Overall, the FDB024N08BL7 is a versatile component ideal for engineers seeking efficient and reliable solutions in electronic designs.

Equivalent

The FDB024N08BL7 is an N-channel MOSFET. Equivalent products include the IRF3205, STP30NF10, and BSC032N08LS. When looking for alternatives, ensure they have similar voltage, current ratings, and RDS(on) specifications for compatibility. Always check the manufacturer's datasheets for precise details before substituting.

Features

The FDB024N08BL7 is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, which makes it suitable for various high-voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 24A, providing robust performance in demanding conditions.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 2.4 mΩ, minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, allowing for easy interfacing with standard logic levels.
5. Package Type: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The MOSFET is optimized for quick switching speeds, enhancing performance in applications like DC-DC converters and motor drives.
7. Thermal Performance: Excellent thermal characteristics enable effective operation in high-temperature environments.
These features make the FDB024N08BL7 ideal for power supplies, automotive applications, and industrial control systems.

Pinout

The FDB024N08BL7 is a N-channel MOSFET with a pin count of 8. Its primary functions include acting as a switch or amplifier in electronic circuits. The specific pin configuration typically includes:
1. Gate (G) - Controls the MOSFET’s on/off state.
2. Drain (D) - Connects to the load; current flows out of this pin when the device is on.
3. Source (S) - Connects to ground or the negative side of the power supply.
The FDB024N08BL7 is designed for applications requiring high efficiency and low on-resistance, making it suitable for use in power management and conversion in various electronic devices. Its specifications allow for significant current handling and fast switching capabilities. Always refer to the datasheet for detailed characteristics and applications.

Manufacturer

The FDB024N08BL7 is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that focuses on providing a wide range of innovative semiconductor solutions, including power management, analog, and mixed-signal devices. Founded in 1999 and headquartered in Phoenix, Arizona, the company serves various markets, including automotive, industrial, communications, and consumer electronics.
ON Semiconductor is recognized for its commitment to sustainability and energy efficiency, developing products that help reduce power consumption in electronic devices. The company has a diverse portfolio that includes discrete semiconductors, image sensors, and integrated circuits. It also emphasizes research and development to drive innovation in the semiconductor industry, ensuring they meet the evolving needs of technology across multiple sectors.

Application

The FDB024N08BL7 is a N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Motor Drivers: In controlling the speed and direction of electric motors.
3. LED Drivers: For efficient lighting control and dimming applications.
4. Switching Power Supplies: In various consumer electronics and industrial equipment.
5. Battery Management Systems: For efficient power distribution and charging.
Its high efficiency and thermal performance make it suitable for these applications.

Package

The FDB024N08BL7 is typically packaged in a TO-220 type package. This package provides good thermal performance and is commonly used for power devices, allowing for efficient heat dissipation.

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