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FDB15N50
+BOMMOSFET N-CH 500V 15A D2PAK
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メーカーオンセミコンダクター社
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メーカー品番 #FDB15N50
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データシート FDB15N50 DataSheet
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在庫状況11188
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 15A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 380mOhm @ 7.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1850 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
概要
Description
The FDB15N50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency energy conversion applications. It is a part of the N-channel MOSFET family and is typically used in switching power supplies, motor controllers, and other circuits requiring efficient power management.
Key specifications of the FDB15N50 include a drain-source voltage (V_DS) of 500 volts and a continuous drain current (I_D) of 15 amperes, making it suitable for high-voltage and moderate current operations. The device features a low on-state resistance, which minimizes power loss and heat generation during operation. Additionally, it offers fast switching speeds, which enhance the overall efficiency of electronic designs.
The FDB15N50 is often favored for its robustness and reliability in demanding environments. It is packaged in a TO-220 or similar package, which provides good thermal performance and ease of mounting on heat sinks for optimal heat dissipation. Overall, it is a versatile component for engineers focusing on power-efficient designs.
Key specifications of the FDB15N50 include a drain-source voltage (V_DS) of 500 volts and a continuous drain current (I_D) of 15 amperes, making it suitable for high-voltage and moderate current operations. The device features a low on-state resistance, which minimizes power loss and heat generation during operation. Additionally, it offers fast switching speeds, which enhance the overall efficiency of electronic designs.
The FDB15N50 is often favored for its robustness and reliability in demanding environments. It is packaged in a TO-220 or similar package, which provides good thermal performance and ease of mounting on heat sinks for optimal heat dissipation. Overall, it is a versatile component for engineers focusing on power-efficient designs.
Equivalent
The FDB15N50 is a N-channel MOSFET. Equivalent products include:
1. IRF640 by International Rectifier
2. STP16NF06 by STMicroelectronics
3. FDP18N50 by Fairchild Semiconductor
4. IXFH26N50 by IXYS
5. RFP15N05 by Fairchild Semiconductor
These alternatives have similar specifications, like voltage and current ratings, but always verify parameters to ensure compatibility with your specific application.
1. IRF640 by International Rectifier
2. STP16NF06 by STMicroelectronics
3. FDP18N50 by Fairchild Semiconductor
4. IXFH26N50 by IXYS
5. RFP15N05 by Fairchild Semiconductor
These alternatives have similar specifications, like voltage and current ratings, but always verify parameters to ensure compatibility with your specific application.
Features
The FDB15N50 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) of 500V.
2. Current Handling: The device can handle a continuous drain current (I_D) of about 15A.
3. R_DS(on): It has a low on-resistance, which is crucial for reducing power loss during operation.
4. Package Type: Often available in a TO-220 package, which provides good thermal performance.
5. Fast Switching: It supports high-speed switching, which enhances performance in applications like power supplies and converters.
6. Thermal Performance: Designed to efficiently dissipate heat, thus improving reliability in high-power applications.
7. Applications: Commonly used in applications such as power supply units, motor drivers, and other power management systems.
These features make the FDB15N50 suitable for various high-voltage and high-current applications, contributing to energy efficiency and performance optimization.
1. Voltage Rating: It typically has a drain-source voltage (V_DS) of 500V.
2. Current Handling: The device can handle a continuous drain current (I_D) of about 15A.
3. R_DS(on): It has a low on-resistance, which is crucial for reducing power loss during operation.
4. Package Type: Often available in a TO-220 package, which provides good thermal performance.
5. Fast Switching: It supports high-speed switching, which enhances performance in applications like power supplies and converters.
6. Thermal Performance: Designed to efficiently dissipate heat, thus improving reliability in high-power applications.
7. Applications: Commonly used in applications such as power supply units, motor drivers, and other power management systems.
These features make the FDB15N50 suitable for various high-voltage and high-current applications, contributing to energy efficiency and performance optimization.
Pinout
The FDB15N50 is a power MOSFET, specifically an N-channel MOSFET, used for switching applications. It comes in a TO-247 package which typically has three pins. The pin configuration and their functions are as follows:
1. Gate (G): This is the control pin for the MOSFET. By applying a voltage to the gate, you can control the conductivity between the drain and source. It effectively turns the MOSFET on or off.
2. Drain (D): This is the pin through which the load current enters the device when it is in the 'on' state.
3. Source (S): This is the pin through which the load current exits the device. It is typically connected to ground in most applications involving N-channel MOSFETs.
The FDB15N50 is characterized by a maximum drain-source voltage of 500V and a continuous drain current capability of 15A, making it suitable for high-voltage and medium-power applications.
1. Gate (G): This is the control pin for the MOSFET. By applying a voltage to the gate, you can control the conductivity between the drain and source. It effectively turns the MOSFET on or off.
2. Drain (D): This is the pin through which the load current enters the device when it is in the 'on' state.
3. Source (S): This is the pin through which the load current exits the device. It is typically connected to ground in most applications involving N-channel MOSFETs.
The FDB15N50 is characterized by a maximum drain-source voltage of 500V and a continuous drain current capability of 15A, making it suitable for high-voltage and medium-power applications.
Manufacturer
The FDB15N50 is a power MOSFET manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that specializes in intelligent power and sensing technologies. The company provides a broad range of products including power and signal management, logic, discrete, and custom devices for various applications across automotive, industrial, communications, computing, and consumer markets. Onsemi focuses on energy-efficient innovations and is committed to sustainable practices and environmental responsibility in its operations and product offerings.
Application
The FDB15N50 is a N-channel MOSFET, often used in applications requiring high-speed switching and efficient power management. Key application areas include:
1. Power Supply Units (PSUs): Utilized in switch-mode power supplies for improved efficiency.
2. Motor Drives: Employed in controlling motors in industrial and consumer electronics.
3. Inverters: Used within inverter circuits for renewable energy systems like solar panels.
4. Lighting: Implemented in LED drivers and other lighting control applications.
5. Uninterruptible Power Supplies (UPS): Ensures efficient power conversion and management.
6. Battery Management Systems: Critical in managing charging and discharging processes.
Its high voltage and current capabilities make it suitable for demanding environments.
1. Power Supply Units (PSUs): Utilized in switch-mode power supplies for improved efficiency.
2. Motor Drives: Employed in controlling motors in industrial and consumer electronics.
3. Inverters: Used within inverter circuits for renewable energy systems like solar panels.
4. Lighting: Implemented in LED drivers and other lighting control applications.
5. Uninterruptible Power Supplies (UPS): Ensures efficient power conversion and management.
6. Battery Management Systems: Critical in managing charging and discharging processes.
Its high voltage and current capabilities make it suitable for demanding environments.
Package
The FDB15N50 is a N-channel MOSFET, and it typically comes in a TO-220 package type. This package is designed for through-hole mounting and is commonly used in applications requiring efficient power management due to its capability to handle high voltages and currents.
