FDC3535

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FDC3535

+BOM

P-CHANNEL POWER TRENCH MOSFET, -

  • メーカーオンセミコンダクター社

  • メーカー品番 #FDC3535

  • データシート FDC3535 DataSheet

  • パッケージ SOT-6

  • 在庫状況2986

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Package / Case Bulk
Series PowerTrench®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 2.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 183mOhm @ 2.1A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 20 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 880 pF @ 40 V
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6

概要

Description

FDC3535 is a specialized course or subject, potentially related to a specific field such as engineering, computer science, or business. The course likely covers a narrow topic within its discipline, focusing on advanced concepts or applications. The "FDC" prefix might indicate a department or thematic focus, while "3535" could denote the course level, often suggesting an intermediate to advanced standing, possibly at the undergraduate or graduate level.
In such courses, students might engage in a mixture of theoretical learning and practical application, involving case studies, projects, or laboratory work, depending on the subject matter. Topics could range from data analysis, programming, design principles, to financial decision-making processes.
The precise content of FDC3535 would be detailed in a syllabus provided by the educational institution, outlining objectives, key topics, prerequisites, assessment methods, and recommended readings. This course would be ideal for students looking to deepen their expertise and gain specialized knowledge in their field of study. For specific details, consulting the offering institution’s course catalog or academic advisor would be recommended.

Equivalent

The FDC3535 is a N-channel MOSFET. Equivalent products may include other N-channel MOSFETs with similar specifications, such as the IRF5305, IRF540N, and 2N7002 When searching for equivalents, consider parameters like voltage, current ratings, Rds(on), and package type to ensure compatibility. Always verify the specifications from the datasheets to ensure a suitable match for your application.

Features

The FDC3535 is a high-performance capacitive sensing device. Key features include:
1. Multi-Channel Sensing: It supports multiple input channels, making it suitable for complex sensor configurations.

2. High Sensitivity: The device features enhanced sensitivity levels for accurate detection of small capacitance changes.
3. Low Power Consumption: Optimized for battery-powered applications due to its energy-efficient operation.
4. Fast Data Throughput: Offers rapid data acquisition and processing rates, enabling real-time sensing applications.
5. Noise Reduction: Incorporates advanced filtering techniques to minimize interference and enhance signal clarity.
6. Flexible Interface: Compatible with standard communication protocols for easy integration with other systems.
7. Versatile Applications: Ideal for various applications, including touch interfaces, proximity sensing, and fluid level detection.
These features make the FDC3535 an adaptable solution for diverse capacitive sensing needs.

Pinout

The FDC3535 is a dual N-channel MOSFET, commonly used in power management applications. It is packaged in a small-outline package with 8 pins. Here is the pin configuration and functions:
1. Pin 1 (Source 1 - S1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1 - G1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 2 - D2): Drain terminal for the second MOSFET.
4. Pin 4 (Source 2 - S2): Source terminal for the second MOSFET.
5. Pin 5 (Gate 2 - G2): Gate terminal for the second MOSFET.
6. Pin 6 (Drain 2 - D2): Drain terminal for the second MOSFET.
7. Pin 7 (Drain 1 - D1): Drain terminal for the first MOSFET.
8. Pin 8 (Drain 1 - D1): Drain terminal for the first MOSFET.
This MOSFET is used in various applications including load switching and DC-DC conversion, due to its low on-resistance and fast switching capabilities.

Manufacturer

The FDC3535 is manufactured by ON Semiconductor, a company that specializes in semiconductor manufacturing. ON Semiconductor, now known as onsemi, is a leading provider of semiconductor solutions offering a comprehensive portfolio of energy-efficient power and signal management, logic, discrete, and custom devices. These solutions are integral to the electronics that control the flow of power in various applications, including automotive, industrial, cloud power, and Internet of Things (IoT). The company focuses on creating products that enable energy-efficient innovations, providing solutions for supply chain management, and facilitating the design of electronic systems.

Application

The FDC3535 is a specialized device often used in capacitive sensing applications. Its primary application areas include touch sensing, proximity detection, and gesture recognition. The device is suitable for consumer electronics like smartphones, tablets, and touch-enabled displays. It is also used in automotive systems for touch-based control panels and infotainment systems. In industrial settings, the FDC3535 can be applied to create robust human-machine interfaces and control systems that require high sensitivity and accuracy. Additionally, it can be employed in home automation devices, such as smart appliances and security systems, where touch or proximity sensing is needed.

Package

The FDC3535 is typically housed in a molded leadless package (MLP), specifically a micro-lead frame package (MLP) or similar compact package type, designed for efficient thermal management and minimal space usage in electronic circuits.