FDC638P

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FDC638P

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MOSFET P-CH 20V 4.5A SUPERSOT6

  • メーカーオンセミコンダクター社

  • メーカー品番 #FDC638P

  • データシート FDC638P DataSheet

  • 在庫状況5730

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仕様

属性 値
Series PowerTrench®
PartStatus Active
BaseProductNumber FDC638
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 4.5A (Ta)
DriveVoltage(MaxRdsOn,MinRdsOn) 2.5V, 4.5V
RdsOn(Max)@Id,Vgs 48mOhm @ 4.5A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 1160 pF @ 10 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6
Package SOT-23-6 Thin, TSOT-23-6
Packaging Cut Tape (CT), Tape & Reel (TR)

概要

Description

The FDC638P is a P-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -4.3A (continuous drain current).
- Low On-Resistance: 85mΩ (max at VGS = -10V).
- Fast Switching: Optimized for power management in portable devices, load switches, and battery protection circuits.
- Compact Package: SOT-23, suitable for space-constrained designs.
Common uses include power distribution, DC-DC converters, and motor control. Its low gate charge and minimal leakage enhance energy efficiency.
For detailed specs, refer to the datasheet.

Features

The FDC638P is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V drain-to-source (VDS).
- Current Rating: -5.3A continuous drain current (ID).
- Low On-Resistance: 50mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -2.5V (VGS(th)).
- Fast Switching: Low gate charge (Qg) and input capacitance for efficient performance.
- Power Dissipation: 2.5W (TA = 25°C).
- Package: SOT-23 (compact surface-mount).
- Applications: Power management, load switching, battery protection, and DC-DC converters.
Compact, efficient, and suitable for low-voltage, high-current applications.

Application

The FDC638P is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in voltage regulators.
4. Motor Control – Driving small motors in consumer electronics.
5. LED Drivers – Controlling LED backlighting and lighting systems.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, low-voltage applications.

Package

The FDC638P is a P-channel MOSFET available in a SOT-23 surface-mount package. This compact, 3-pin package is widely used for space-constrained applications, offering efficient power handling in a small footprint. The SOT-23 is suitable for automated assembly processes and is commonly found in portable electronics and power management circuits.

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