FDD5690

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FDD5690

+BOM

POWER FIELD-EFFECT TRANSISTOR, 3

  • メーカーフェアチャイルドセミコンダクター

  • メーカー品番 #FDD5690

  • 在庫状況19913

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 30A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 27mOhm @ 9A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 32 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1110 pF @ 25 V
Power Dissipation (Max) 3.2W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)

概要

Description

FDD5690 is likely a course code, possibly from an academic institution, though specific course details can vary. Generally, in such contexts, an "Introduction to" course serves as a foundational class designed to give students a broad overview of the subject matter, relevant theories, and practical skills. If FDD5690 is related to fields such as engineering, science, or technology, it might cover basic principles, methodologies, and tools pertinent to that discipline. The course might include lectures, practical exercises, and projects to ensure comprehensive understanding.
Students are usually introduced to key concepts and terminologies, learning how to apply them in real-world scenarios. The course might also cover the historical development of the field, significant contributors, and current trends or challenges. Assessment methods typically include quizzes, assignments, and exams to evaluate students' grasp of the material. For specific information about FDD5690, such as the syllabus or prerequisites, consulting the academic institution offering the course would be necessary.

Equivalent

The FDD5690 is an N-channel MOSFET commonly used for switching applications. Equivalent products include:
1. IRF540 by International Rectifier
2. FDP3682 by ON Semiconductor
3. BSC026N04LS by Infineon
4. STP55NF06 by STMicroelectronics
These alternatives may have slightly different specifications, so it's important to compare parameters like voltage, current ratings, and Rds(on) to ensure compatibility with your application.

Features

The FDD5690 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) often used in electronic devices for switching and amplification purposes. Here are some key features:
1. Voltage and Current Ratings: It typically handles a maximum drain-source voltage in the range of 30-60V and a continuous drain current suitable for moderate power applications.

2. Low On-Resistance: It is designed with low on-resistance, which enhances efficiency by reducing power loss during operation.
3. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it suitable for high-frequency applications.
4. Thermal Performance: It often comes with efficient thermal management features to handle heat dissipation effectively, ensuring reliable performance over time.
5. Package Type: Commonly available in surface-mount packages like TO-252 or TO-263, which helps in compact PCB designs.
6. Applications: Widely used in power management, automotive, industrial, and consumer electronics sectors.
These features make the FDD5690 a versatile component for various electronic applications.

Pinout

The FDD5690 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for electronic switching applications. It is typically housed in a SuperSOT-6 package. The device features 6 pins, with the functions generally as follows:
1. Pin 1 (Source 1): The source terminal of the first MOSFET.
2. Pin 2 (Gate 1): The gate terminal for controlling the first MOSFET.
3. Pin 3 (Drain 1): The drain terminal of the first MOSFET.
4. Pin 4 (Drain 2): The drain terminal of the second MOSFET, often internally connected to Pin 3.
5. Pin 5 (Gate 2): The gate terminal for controlling the second MOSFET.
6. Pin 6 (Source 2): The source terminal of the second MOSFET.
The FDD5690 is a dual N-channel MOSFET, which means it contains two separate N-channel MOSFETs in one package. These are used in various applications like DC-DC converters, power management, and load switching, offering low on-state resistance for efficient performance. Always refer to the manufacturer’s datasheet for detailed specifications and pin configurations.

Manufacturer

The FDD5690 is manufactured by ON Semiconductor, a company that specializes in semiconductor components. ON Semiconductor, now known as onsemi, is a leading supplier of advanced semiconductors for a wide range of applications, including automotive, industrial, cloud, and IoT. They provide a diverse portfolio of power and signal management, logic, discrete, and custom devices, which help engineers solve their unique design challenges in the development of energy-efficient electronics.

Application

The FDD5690 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. Its primary application areas include power management systems, such as voltage regulation and power conversion in power supplies and DC-DC converters. It is also used in motor control circuits for applications like electric vehicles and industrial automation. Additionally, the FDD5690 is found in battery management systems, enhancing the efficiency and lifespan of batteries in portable electronics and energy storage systems. Its efficiency and reliability make it suitable for high-frequency and high-speed switching applications in a wide range of electronic devices.

Package

The FDD5690 is a MOSFET transistor, and its package type is the SO-8 (Small Outline) package, which is a surface-mount package commonly used for integrated circuits.

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