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FDD5690
+BOMPOWER FIELD-EFFECT TRANSISTOR, 3
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メーカーフェアチャイルドセミコンダクター
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メーカー品番 #FDD5690
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在庫状況19913
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 27mOhm @ 9A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1110 pF @ 25 V |
| Power Dissipation (Max) | 3.2W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
概要
Description
Students are usually introduced to key concepts and terminologies, learning how to apply them in real-world scenarios. The course might also cover the historical development of the field, significant contributors, and current trends or challenges. Assessment methods typically include quizzes, assignments, and exams to evaluate students' grasp of the material. For specific information about FDD5690, such as the syllabus or prerequisites, consulting the academic institution offering the course would be necessary.
Equivalent
1. IRF540 by International Rectifier
2. FDP3682 by ON Semiconductor
3. BSC026N04LS by Infineon
4. STP55NF06 by STMicroelectronics
These alternatives may have slightly different specifications, so it's important to compare parameters like voltage, current ratings, and Rds(on) to ensure compatibility with your application.
Features
1. Voltage and Current Ratings: It typically handles a maximum drain-source voltage in the range of 30-60V and a continuous drain current suitable for moderate power applications.
2. Low On-Resistance: It is designed with low on-resistance, which enhances efficiency by reducing power loss during operation.
3. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it suitable for high-frequency applications.
4. Thermal Performance: It often comes with efficient thermal management features to handle heat dissipation effectively, ensuring reliable performance over time.
5. Package Type: Commonly available in surface-mount packages like TO-252 or TO-263, which helps in compact PCB designs.
6. Applications: Widely used in power management, automotive, industrial, and consumer electronics sectors.
These features make the FDD5690 a versatile component for various electronic applications.
Pinout
1. Pin 1 (Source 1): The source terminal of the first MOSFET.
2. Pin 2 (Gate 1): The gate terminal for controlling the first MOSFET.
3. Pin 3 (Drain 1): The drain terminal of the first MOSFET.
4. Pin 4 (Drain 2): The drain terminal of the second MOSFET, often internally connected to Pin 3.
5. Pin 5 (Gate 2): The gate terminal for controlling the second MOSFET.
6. Pin 6 (Source 2): The source terminal of the second MOSFET.
The FDD5690 is a dual N-channel MOSFET, which means it contains two separate N-channel MOSFETs in one package. These are used in various applications like DC-DC converters, power management, and load switching, offering low on-state resistance for efficient performance. Always refer to the manufacturer’s datasheet for detailed specifications and pin configurations.