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FDD8874
+BOMMOSFET N-CH 30V 116A D-PAK
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メーカーオンセミコンダクター社
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メーカー品番 #FDD8874
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データシート FDD8874 DataSheet
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在庫状況8876
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 116A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2990 pF @ 15 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD887 |
概要
Description
Key specifications include low output impedance for rapid gate charging/discharging, adjustable dead time to prevent shoot-through, and thermal protection features for enhanced reliability. It typically supports both high-side and low-side configurations, making it versatile for different circuit designs. Overall, the FDD8874 is an ideal choice for engineers seeking to optimize power management in their systems while ensuring high efficiency and performance.
Equivalent
Features
1. Voltage Rating: Typically rated for 30V, making it suitable for low to medium voltage applications.
2. Current Handling: Capable of handling high continuous drain currents (up to 50A), allowing for efficient power switching.
3. Low On-Resistance: Features a low R_DS(on) value, which minimizes conduction losses and improves efficiency during operation.
4. Fast Switching Speed: Designed for high-speed switching applications, reducing transition losses and enhancing overall performance.
5. Thermal Performance: Good thermal characteristics with a robust package design that supports effective heat dissipation.
6. Gate Drive Compatibility: Compatible with standard gate drive voltages, facilitating easy integration into existing designs.
Overall, the FDD8874 is an ideal choice for applications requiring efficient power delivery and effective thermal management.
Pinout
The pin functions are as follows:
1. Gate 1: Controls the first MOSFET.
2. Source 1: Source terminal for the first MOSFET.
3. Drain 1: Drain terminal for the first MOSFET.
4. Source 2: Source terminal for the second MOSFET.
5. Drain 2: Drain terminal for the second MOSFET.
6. Gate 2: Controls the second MOSFET.
7. Common Source: Common source pin for both MOSFETs, often connected to ground.
8. Thermal Pad: Provides a heat dissipation surface.
This configuration allows for efficient switching and energy management in various electronic applications.
Manufacturer
Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, focusing on energy-efficient technologies and solutions. Their products are known for performance and reliability, catering to the increasing demand for energy-efficient devices in today's market. The company is headquartered in Phoenix, Arizona, and operates internationally, emphasizing sustainability and technological advancement in the semiconductor industry.
Application
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Power Management ICs: In battery-powered devices for energy efficiency.
3. Motor Control: In driving electric motors for robotics and automation.
4. LED Drivers: For efficient control of LED lighting systems.
5. Telecommunications: In RF amplifiers and switching applications.
6. Consumer Electronics: For power switching in laptops and smartphones.
These areas leverage its low on-resistance and high-speed switching capabilities.