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FDMC6686P
+BOMMOSFET P-CH 20V 18A/56A 8PQFN
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メーカーオンセミコンダクター社
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メーカー品番 #FDMC6686P
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データシート FDMC6686P DataSheet
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在庫状況8279
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 18A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 10 V |
| Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Package / Case | 8-PowerWDFN |
| Base Product Number | FDMC6686 |
概要
Description
The FDMC6686P is a high-performance N-channel MOSFET designed for use in synchronous rectification and power management applications. It features a low on-resistance, enabling efficient power conversion and reduced heat generation, which is critical for high-density designs. With a maximum drain-source voltage (VDS) rating of 30 volts and a continuous drain current (ID) of up to 60 amps, it is suitable for use in various applications, including DC-DC converters, power supplies, and motor drives.
The device exhibits fast switching speeds, making it ideal for high-frequency applications, and it incorporates a low gate charge, which contributes to lower power loss during operation. Its compact size and excellent thermal performance make it suitable for applications requiring space-saving solutions. The FDMC6686P is commonly used in consumer electronics, telecommunications, and industrial equipment, providing reliable performance in demanding environments. Overall, this MOSFET is recognized for its efficiency and reliability, making it a popular choice among engineers for modern electronic designs.
The device exhibits fast switching speeds, making it ideal for high-frequency applications, and it incorporates a low gate charge, which contributes to lower power loss during operation. Its compact size and excellent thermal performance make it suitable for applications requiring space-saving solutions. The FDMC6686P is commonly used in consumer electronics, telecommunications, and industrial equipment, providing reliable performance in demanding environments. Overall, this MOSFET is recognized for its efficiency and reliability, making it a popular choice among engineers for modern electronic designs.
Equivalent
The FDMC6686P is a dual N-channel MOSFET commonly used in power management applications. Equivalent products include the AOZ1280, IRF3205, and BSC090N10LS. Ensure to check specifications like RDS(on), VDS, and current ratings for compatibility in your specific application.
Features
The FDMC6686P is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance: Offers a low R_DS(on) value, which minimizes conduction losses.
2. High Current Rating: Capable of handling high continuous drain currents, making it suitable for power applications.
3. Fast Switching Speed: Designed for quick switching, improving efficiency in various applications.
4. High Voltage Operation: Supports a significant drain-source voltage, enhancing its versatility in various circuits.
5. Thermal Performance: Features a robust thermal performance, ensuring reliability under high temperatures.
6. Compact Package: Available in a compact package, which aids in space-constrained designs.
7. Low Gate Charge: Reduces drive losses, contributing to overall system efficiency.
These attributes make the FDMC6686P ideal for use in power supplies, motor drives, and other high-efficiency applications.
1. Low On-Resistance: Offers a low R_DS(on) value, which minimizes conduction losses.
2. High Current Rating: Capable of handling high continuous drain currents, making it suitable for power applications.
3. Fast Switching Speed: Designed for quick switching, improving efficiency in various applications.
4. High Voltage Operation: Supports a significant drain-source voltage, enhancing its versatility in various circuits.
5. Thermal Performance: Features a robust thermal performance, ensuring reliability under high temperatures.
6. Compact Package: Available in a compact package, which aids in space-constrained designs.
7. Low Gate Charge: Reduces drive losses, contributing to overall system efficiency.
These attributes make the FDMC6686P ideal for use in power supplies, motor drives, and other high-efficiency applications.
Pinout
The FDMC6686P is an N-channel MOSFET designed for power management applications, particularly in synchronous buck converters. It features a total of 8 pins.
The pin configuration and their functions are as follows:
1. Gate - Controls the MOSFET switching.
2. Source - Connected to ground in typical applications.
3. Drain - The output side where the load is connected.
4. Gate (for the second MOSFET) - Controls the switching of the second N-channel MOSFET.
5. Source (for the second MOSFET) - Also connected to ground.
6. Drain (for the second MOSFET) - The output side for the second MOSFET.
The FDMC6686P is noted for its low on-resistance and fast switching speeds, making it suitable for high-efficiency applications. For detailed pin assignments and additional specifications, refer to the manufacturer's datasheet.
The pin configuration and their functions are as follows:
1. Gate - Controls the MOSFET switching.
2. Source - Connected to ground in typical applications.
3. Drain - The output side where the load is connected.
4. Gate (for the second MOSFET) - Controls the switching of the second N-channel MOSFET.
5. Source (for the second MOSFET) - Also connected to ground.
6. Drain (for the second MOSFET) - The output side for the second MOSFET.
The FDMC6686P is noted for its low on-resistance and fast switching speeds, making it suitable for high-efficiency applications. For detailed pin assignments and additional specifications, refer to the manufacturer's datasheet.
Manufacturer
The FDMC6686P is manufactured by Fairchild Semiconductor, which is now a part of ON Semiconductor following its acquisition in 2016. Fairchild Semiconductor was established in 1957 and is known for its innovation in the semiconductor industry, particularly in power management, discrete components, and analog devices. The company has a long history of developing products that are widely used in various applications, including automotive, industrial, and consumer electronics.
ON Semiconductor, the parent company, focuses on energy-efficient solutions and has a broad portfolio that includes sensors, power management, and logic devices, serving a wide range of industries from automotive to communications. The FDMC6686P itself is a dual N-channel MOSFET, designed for efficient power management applications, showcasing Fairchild’s expertise in semiconductor technology.
ON Semiconductor, the parent company, focuses on energy-efficient solutions and has a broad portfolio that includes sensors, power management, and logic devices, serving a wide range of industries from automotive to communications. The FDMC6686P itself is a dual N-channel MOSFET, designed for efficient power management applications, showcasing Fairchild’s expertise in semiconductor technology.
Application
The FDMC6686P is a dual N-channel MOSFET primarily used in DC-DC converters, power management systems, and synchronous rectification applications. Its features make it suitable for use in laptop power supplies, servers, and high-efficiency power supplies in telecommunications. Additionally, it is ideal for automotive applications, such as battery management systems and electric vehicle powertrains, due to its high efficiency and thermal performance. The device's low on-resistance and fast switching capabilities also make it applicable in renewable energy systems like solar inverters.
Package
The FDMC6686P is packaged in a PowerPAK SO-8 format, which is a surface-mount package commonly used for power MOSFETs. This package provides efficient thermal performance and compact dimensions suitable for various electronic applications.
