仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain(Id) @ 25°C | 18.5A (Ta), 114A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 4mOhm @ 67A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 370A |
| Gate Charge(Qg)(Max) @ Vgs | 82 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6460 pF @ 60 V |
| Power Dissipation (Max) | 2.7W (Ta), 106W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
概要
Description
FDMS4D0N12C appears to be a specific product model, likely related to electronic components or semiconductors. Its introduction would typically cover the essential details such as its functionality, specifications, and applications. For instance, if it is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), the introduction might highlight its primary use in switching and amplifying electronic signals. Key specifications could include its voltage and current ratings, thermal performance, efficiency, and package type. Understanding these details helps engineers and designers determine the suitability of the component for their specific applications, such as power management in electronic devices, automotive systems, or industrial equipment. Additionally, the introduction might touch on the advantages of FDMS4D0N12C over similar components, such as improved energy efficiency or enhanced durability. For more specific information, consulting the product datasheet or manufacturer's documentation is recommended.
Equivalent
The FDMS4D0N12C is a PowerTrench MOSFET by ON Semiconductor. Equivalent products would be other power MOSFETs with similar specifications, such as voltage and current ratings. Some possible equivalents include:
1. Infineon BSC026N12NS - 120V, 40A N-channel MOSFET.
2. Vishay SiR182DP - 120V, 40A N-channel MOSFET.
3. STMicroelectronics STL120N10F7 - 100V, 40A N-channel MOSFET.
Ensure to verify the exact specifications and package type to confirm suitability for your application.
1. Infineon BSC026N12NS - 120V, 40A N-channel MOSFET.
2. Vishay SiR182DP - 120V, 40A N-channel MOSFET.
3. STMicroelectronics STL120N10F7 - 100V, 40A N-channel MOSFET.
Ensure to verify the exact specifications and package type to confirm suitability for your application.
Features
The FDMS4D0N12C is a PowerTrench MOSFET designed for efficient performance in various electronic applications. Key features include:
1. Low On-Resistance: It offers low R_DS(on), which minimizes power loss and improves efficiency.
2. Fast Switching Speed: The MOSFET supports rapid switching, enhancing performance in high-frequency applications.
3. High Power Density: Compact design allows for efficient power management in space-constrained environments.
4. Thermal Performance: Optimized for excellent thermal performance, helping manage heat dissipation effectively.
5. Robust Design: Includes features to withstand voltage spikes and other electrical stresses.
6. Enhanced Safe Operating Area (SOA): Ensures reliable operation across a range of conditions.
7. Lead-Free Package: Environmentally friendly, compliant with global standards.
These features make the FDMS4D0N12C suitable for applications in power management, DC-DC converters, and motor drives, where efficiency and reliability are critical.
1. Low On-Resistance: It offers low R_DS(on), which minimizes power loss and improves efficiency.
2. Fast Switching Speed: The MOSFET supports rapid switching, enhancing performance in high-frequency applications.
3. High Power Density: Compact design allows for efficient power management in space-constrained environments.
4. Thermal Performance: Optimized for excellent thermal performance, helping manage heat dissipation effectively.
5. Robust Design: Includes features to withstand voltage spikes and other electrical stresses.
6. Enhanced Safe Operating Area (SOA): Ensures reliable operation across a range of conditions.
7. Lead-Free Package: Environmentally friendly, compliant with global standards.
These features make the FDMS4D0N12C suitable for applications in power management, DC-DC converters, and motor drives, where efficiency and reliability are critical.
Pinout
The FDMS4D0N12C is an N-channel MOSFET. It features a Power 56 package, which typically has an 8-pin configuration. The primary function of this MOSFET is to act as a switch or amplifier in electronic circuits, handling medium to high power applications.
The specific pin configuration for an 8-pin MOSFET like the FDMS4D0N12C generally includes:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The channel through which current flows when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
Typically, in a standard pin configuration, multiple pins are paralleled to each of these terminals to enhance current carrying capability, but the exact pin distribution should be verified from the datasheet for precise design applications.
The specific pin configuration for an 8-pin MOSFET like the FDMS4D0N12C generally includes:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The channel through which current flows when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
Typically, in a standard pin configuration, multiple pins are paralleled to each of these terminals to enhance current carrying capability, but the exact pin distribution should be verified from the datasheet for precise design applications.
Manufacturer
The FDMS4D0N12C is manufactured by ON Semiconductor, a company known for designing and manufacturing semiconductors. ON Semiconductor provides a wide range of products, including power and signal management, logic, discrete, and custom devices for various sectors such as automotive, industrial, communications, consumer electronics, and computing. The company focuses on energy-efficient innovations, contributing to sustainable energy solutions and advanced technologies across different industries.
Application
The FDMS4D0N12C is a power MOSFET, typically used in applications requiring efficient power management and control. Its application areas include:
1. Switching Regulators: Used in DC-DC converters to regulate voltage efficiently.
2. Motor Drives: Controls the power supply to motors in industrial and automotive systems.
3. Power Supply Units (PSUs): Used in computer and consumer electronics for converting electrical power.
4. Battery Management Systems: Manages battery charging and discharging in portable electronics.
5. Telecommunications Equipment: Facilitates power management in network infrastructure.
6. Inverters: Used in solar power systems for converting DC to AC power.
Its low on-resistance and fast switching capabilities make it suitable for these applications.
1. Switching Regulators: Used in DC-DC converters to regulate voltage efficiently.
2. Motor Drives: Controls the power supply to motors in industrial and automotive systems.
3. Power Supply Units (PSUs): Used in computer and consumer electronics for converting electrical power.
4. Battery Management Systems: Manages battery charging and discharging in portable electronics.
5. Telecommunications Equipment: Facilitates power management in network infrastructure.
6. Inverters: Used in solar power systems for converting DC to AC power.
Its low on-resistance and fast switching capabilities make it suitable for these applications.
Package
The FDMS4D0N12C is a MOSFET transistor, and its package type is typically a Power 56 (PQFN56). This type of packaging is designed for efficient power handling and thermal performance in electronic circuits.
