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FDN336P
+BOMMOSFET P-CH 20V 1.3A SUPERSOT3
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メーカーオンセミコンダクター社
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メーカー品番 #FDN336P
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データシート FDN336P DataSheet
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在庫状況29018
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 200mOhm @ 1.3A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 330 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
概要
Description
FDN336P is typically a course code used in academic institutions, though specifics can vary by institution. Generally, a course introduction would outline its main objectives, topics covered, prerequisites, and methods of assessment. If FDN336P relates to a specific area of study, such as engineering, computer science, or another discipline, the introduction might include:
1. Course Objectives: Detailing the learning outcomes expected by the end of the course.
2. Topics Covered: Listing key areas or subjects, which might include foundational theories, practical applications, or specific technologies or methodologies.
3. Prerequisites: Identifying any prior courses or knowledge expected for enrollment.
4. Assessment Methods: Explaining how students' understanding will be evaluated, e.g., through exams, projects, or participation.
5. Resources and Materials: Mentioning textbooks, software, or other materials needed.
For specific information, refer to the syllabus or course catalog of the offering institution. If this course is from a fictional or proprietary curriculum, it would be best to consult that specific source for more precise details.
1. Course Objectives: Detailing the learning outcomes expected by the end of the course.
2. Topics Covered: Listing key areas or subjects, which might include foundational theories, practical applications, or specific technologies or methodologies.
3. Prerequisites: Identifying any prior courses or knowledge expected for enrollment.
4. Assessment Methods: Explaining how students' understanding will be evaluated, e.g., through exams, projects, or participation.
5. Resources and Materials: Mentioning textbooks, software, or other materials needed.
For specific information, refer to the syllabus or course catalog of the offering institution. If this course is from a fictional or proprietary curriculum, it would be best to consult that specific source for more precise details.
Equivalent
The FDN336P is a P-channel MOSFET commonly used for load switching applications. Equivalent products may include:
1. 2N7002P by NXP
2. BSS84 by Infineon
3. VP2306N3-G by Vishay
4. SI2301DS by Vishay
5. AO3415 by Alpha & Omega Semiconductor
Ensure to check the datasheets for exact matching characteristics such as voltage, current ratings, and package type before substitution.
1. 2N7002P by NXP
2. BSS84 by Infineon
3. VP2306N3-G by Vishay
4. SI2301DS by Vishay
5. AO3415 by Alpha & Omega Semiconductor
Ensure to check the datasheets for exact matching characteristics such as voltage, current ratings, and package type before substitution.
Features
The FDN336P is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is commonly used in various electronic applications. Here are some key features:
1. Type: P-channel MOSFET.
2. Voltage Rating: Typically has a drain-source voltage (V_DS) rating of around -30V.
3. Current Rating: Maximum continuous drain current (I_D) is often in the range of -2.8A.
4. R_DS(on): Low on-resistance, typically around 0.08 ohms at a gate-source voltage (V_GS) of -10V, ensuring efficient current flow with minimal power loss.
5. Package: Usually available in a compact SOT-23 package, allowing for space-efficient designs.
6. Applications: Ideal for load switching applications, DC-DC converters, and other power management tasks.
7. Thermal Performance: Adequate thermal characteristics to handle power dissipation effectively in small form factors.
These features make the FDN336P suitable for use in battery-powered and portable applications where efficiency and space conservation are crucial.
1. Type: P-channel MOSFET.
2. Voltage Rating: Typically has a drain-source voltage (V_DS) rating of around -30V.
3. Current Rating: Maximum continuous drain current (I_D) is often in the range of -2.8A.
4. R_DS(on): Low on-resistance, typically around 0.08 ohms at a gate-source voltage (V_GS) of -10V, ensuring efficient current flow with minimal power loss.
5. Package: Usually available in a compact SOT-23 package, allowing for space-efficient designs.
6. Applications: Ideal for load switching applications, DC-DC converters, and other power management tasks.
7. Thermal Performance: Adequate thermal characteristics to handle power dissipation effectively in small form factors.
These features make the FDN336P suitable for use in battery-powered and portable applications where efficiency and space conservation are crucial.
Pinout
The FDN336P is a P-Channel MOSFET. It typically comes in a SOT-23 package, which has three pins. The pin configuration and functions are as follows:
1. Pin 1 (Gate): This pin controls the MOSFET's operation. Applying a voltage here allows current to flow between the source and drain.
2. Pin 2 (Source): This is the terminal through which current enters the MOSFET. For P-Channel MOSFETs like the FDN336P, the source is typically connected to a more positive voltage.
3. Pin 3 (Drain): This is the terminal through which current exits the MOSFET when it is in the "on" state.
The FDN336P is commonly used in switching applications due to its low on-resistance and fast switching speed.
1. Pin 1 (Gate): This pin controls the MOSFET's operation. Applying a voltage here allows current to flow between the source and drain.
2. Pin 2 (Source): This is the terminal through which current enters the MOSFET. For P-Channel MOSFETs like the FDN336P, the source is typically connected to a more positive voltage.
3. Pin 3 (Drain): This is the terminal through which current exits the MOSFET when it is in the "on" state.
The FDN336P is commonly used in switching applications due to its low on-resistance and fast switching speed.
Manufacturer
The FDN336P is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a prominent semiconductor company that focuses on designing and producing a broad range of semiconductor components. These components are critical for various applications, including power management, automotive electronics, industrial automation, computing, and wireless communications.
Onsemi's product portfolio includes power and signal management, logic, discrete, and custom devices. The company is known for its emphasis on energy-efficient innovations and solutions that cater to advanced computing, automotive systems, and communications infrastructure. With a strong commitment to sustainability and efficiency, onsemi aims to enable customers to reduce energy consumption and achieve higher performance in their electronic systems.
The FDN336P itself is a P-channel MOSFET, which is a type of transistor used for switching and amplifying electronic signals in various circuits. This component is valued for its efficiency and reliability in controlling power within electronic devices.
Onsemi's product portfolio includes power and signal management, logic, discrete, and custom devices. The company is known for its emphasis on energy-efficient innovations and solutions that cater to advanced computing, automotive systems, and communications infrastructure. With a strong commitment to sustainability and efficiency, onsemi aims to enable customers to reduce energy consumption and achieve higher performance in their electronic systems.
The FDN336P itself is a P-channel MOSFET, which is a type of transistor used for switching and amplifying electronic signals in various circuits. This component is valued for its efficiency and reliability in controlling power within electronic devices.
Application
The FDN336P is typically a type of MOSFET transistor used in various electronic applications. Its key application areas include power management, where it serves as a switch or amplifier in DC-DC converters, voltage regulators, and power supply circuits. It's also used in motor control systems, providing efficient switching for driving motors. Additionally, the FDN336P is found in battery-powered devices to enhance energy efficiency and in signal processing circuits for amplifying or switching signals. Its compact size and thermal efficiency make it ideal for use in portable and compact electronic devices. Overall, the FDN336P is valued for its low on-resistance and fast switching capabilities.
Package
The FDN336P is typically available in a SuperSOT-3 package, which is a compact form factor designed for surface-mount technology (SMT) applications. This package type is commonly used for small signal MOSFETs, providing efficient thermal performance and space savings on printed circuit boards.
