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FDP18N50
+BOMMOSFET N-CH 500V 18A TO220-3
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メーカーオンセミコンダクター社
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メーカー品番 #FDP18N50
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データシート FDP18N50 DataSheet
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パッケージ TO-220-3
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在庫状況2956
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Bulk,Tube |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 265mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2860 pF @ 25 V |
| PowerDissipation(Max) | 235W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
概要
Description
The MOSFET's construction provides robustness and efficiency, ensuring it can handle significant power levels while minimizing energy loss. It is often used in scenarios where efficient power management and thermal performance are critical. The FDP18N50 is encapsulated in a standard TO-220 package, which aids in heat dissipation and ease of integration into various electronic circuits. These characteristics make it a reliable choice for engineers looking for a durable and high-performance solution in power electronic applications.
Equivalent
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 500V and a continuous drain current (I_d) of 18A, making it suitable for high-voltage applications.
2. R_DS(on): The device features a low on-state resistance, which reduces conduction losses and improves efficiency.
3. Package Type: It is typically available in a TO-220 package, which provides good thermal performance and is easy to mount on a heatsink.
4. Fast Switching: The MOSFET provides fast switching speeds, which help in reducing switching losses in high-frequency applications.
5. Thermal Characteristics: It has a good thermal resistance from junction to case, which aids in effective heat dissipation.
6. Applications: Commonly used in power supplies, motor controllers, and other applications requiring high efficiency and reliability.
These features make the FDP18N50 a robust and versatile choice for various power management applications.
Pinout
1. Gate (G): This pin is responsible for controlling the conductivity between the drain and source. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): This pin is connected to the load, and it is where the current flows out of the transistor when it is in the "on" state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
These pins support the basic operation of the transistor, where the gate voltage controls the connection between the drain and source, allowing it to act as a switch or amplifier.
Manufacturer
Application
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Employed in driving motors for industrial and automotive applications due to its high efficiency and fast switching capabilities.
3. Converters and Inverters: Utilized in DC-DC converters and DC-AC inverters, particularly in renewable energy systems like solar inverters.
4. Lighting: Applied in electronic ballasts for fluorescent and LED lighting systems.
5. Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable power backup solutions.
These applications benefit from its ability to handle high voltage and current with low switching losses.