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FDPF5N60NZ
+BOMMOSFET N-CH 600V 4.5A TO220F
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メーカーオンセミコンダクター社
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メーカー品番 #FDPF5N60NZ
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在庫状況6569
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仕様
| 属性 | 値 |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | UniFET-II™ |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 2.25A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 600 pF @ 25 V |
| Power Dissipation (Max) | 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
概要
Description
FDPF5N60NZ is a high‑voltage N‑channel power MOSFET (Fairchild/Onsemi). It’s intended for switching power electronics such as switch‑mode power supplies, motor drivers, and inverters. The device is rated for about 600 V drain‑to‑source and a few amperes of continuous current; RDS(on) is relatively high compared with modern low‑voltage parts and varies with temperature. The gate threshold is roughly 2–4 V, but to reach the lowest RDS(on) you typically drive the gate at around 10 V (not always a logic‑level device). Use as a switch: drain to the high side, source to return; drive with appropriate gate drive, series gate resistor, and heat sinking; include protection for inductive switching (snubber/TVS) as needed. Important specs to confirm on the datasheet: VDS, ID, RDS(on) at your drive voltage and temperature, total gate charge, switching speed, avalanche rating, and packaging/pinout. In short: a 600 V N‑channel MOSFET for high‑voltage switching; check the datasheet for exact numbers and application notes.
Equivalent
FDPF5N60NZ is a 600 V, ~5 A N‑channel MOSFET. Common equivalents:
- STP5N60M2 (STMicroelectronics)
- FQPF5N60C (ON Semiconductor / Fairchild)
- IRF5N60 (Infineon/International Rectifier)
- IXFN60N60 (IXYS)
When substituting, check Vds, Id, Rds(on), package, and pinout to ensure compatibility.
- STP5N60M2 (STMicroelectronics)
- FQPF5N60C (ON Semiconductor / Fairchild)
- IRF5N60 (Infineon/International Rectifier)
- IXFN60N60 (IXYS)
When substituting, check Vds, Id, Rds(on), package, and pinout to ensure compatibility.
Features
FDPF5N60NZ is a high‑voltage N‑channel MOSFET. Key features:
- 600 V drain–source blocking voltage
- 5 A continuous drain current
- N‑channel enhancement mode device
- Low on‑state resistance (Rds(on)) as specified in the datasheet
- Fast switching with low gate drive requirements
- Avalanche rugged/robust switching performance
- RoHS compliant
- Available in common power packages (e.g., TO‑220, D2PAK) depending on supplier
Typical applications: high‑voltage switch‑mode power supplies, offline adapters, motor drivers, and other high‑voltage switching circuits.
- 600 V drain–source blocking voltage
- 5 A continuous drain current
- N‑channel enhancement mode device
- Low on‑state resistance (Rds(on)) as specified in the datasheet
- Fast switching with low gate drive requirements
- Avalanche rugged/robust switching performance
- RoHS compliant
- Available in common power packages (e.g., TO‑220, D2PAK) depending on supplier
Typical applications: high‑voltage switch‑mode power supplies, offline adapters, motor drivers, and other high‑voltage switching circuits.
Pinout
- Pin count: 3 leads (Gate, Drain, Source) with a drain tab (drain tied to the tab) = 4 electrical connections total.
- Function: N-channel enhancement-mode power MOSFET rated for high-voltage (≈600 V) switching, used in power electronics (power supplies, inverters, etc.).
Note: consult the datasheet for exact pinout for your package.
- Function: N-channel enhancement-mode power MOSFET rated for high-voltage (≈600 V) switching, used in power electronics (power supplies, inverters, etc.).
Note: consult the datasheet for exact pinout for your package.
Manufacturer
Manufacturer: Fairchild Semiconductor, now part of ON Semiconductor.
What kind of company: An American multinational semiconductor company that designs and manufactures integrated circuits and discrete devices (e.g., power MOSFETs).
What kind of company: An American multinational semiconductor company that designs and manufactures integrated circuits and discrete devices (e.g., power MOSFETs).
Application
FDPF5N60NZ is a 600 V, 5 A N-channel enhancement‑mode power MOSFET. Typical applications include:
- Offline switch‑mode power supplies and AC‑DC adapters (including PFC stages)
- DC‑DC converters and other high‑voltage switching regulators
- Motor drives and inverters
- Solar inverters and UPS/battery-powered systems
- Industrial switchgear and general high‑voltage switching in consumer/industrial equipment
- Offline switch‑mode power supplies and AC‑DC adapters (including PFC stages)
- DC‑DC converters and other high‑voltage switching regulators
- Motor drives and inverters
- Solar inverters and UPS/battery-powered systems
- Industrial switchgear and general high‑voltage switching in consumer/industrial equipment
Package
TO-220AB through-hole package.
