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FDS2582
+BOMMOSFET N-CH 150V 4.1A 8SOIC
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メーカーオンセミコンダクター社
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メーカー品番 #FDS2582
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データシート FDS2582 DataSheet
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パッケージ SOIC-8
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在庫状況7361
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 4.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 66mOhm @ 4.1A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1290 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
概要
Description
In an introductory course like FDS2582, students are usually exposed to fundamental concepts, theories, and methodologies. This might include understanding key principles, familiarization with essential tools and techniques, and an overview of the discipline's scope and applications. Coursework may involve lectures, practical exercises, and projects to ensure students can apply theoretical knowledge in practical scenarios.
The course may also highlight the latest trends and challenges in the field, preparing students for more advanced study or professional application. Topics might range from basic analytical techniques to data management and interpretation, depending on the specific discipline focus. Overall, FDS2582 serves as a stepping stone for students to gain confidence and competence in their chosen field.
Features
1. Low On-Resistance: Offers low R_DS(on) which ensures minimal power loss during operation.
2. High-Speed Switching: This characteristic is useful for applications requiring rapid switching with minimal delay.
3. Thermal Performance: The device is designed to manage heat effectively, thus ensuring stable performance under varying thermal conditions.
4. Compact Package: Usually comes in a small form factor, like a SOIC-8 package, making it suitable for space-constrained applications.
5. Robust Design: Built to withstand voltage and current stress, enhancing reliability and longevity.
6. Low Gate Charge: Facilitates reduced gate drive loss, contributing to overall energy efficiency.
7. Versatile Applications: Ideal for use in DC-DC converters, power management circuits, and load switches.
These features make the FDS2582 a popular choice for designers looking to implement efficient and compact power solutions.
Pinout
1. Source (S): There are generally three source pins (1, 2, and 5) that are often internally connected. These are the terminals where current enters the MOSFET from the load.
2. Gate (G): Pin 4 is the gate, which is the control terminal used to turn the MOSFET on or off. Applying a voltage to the gate terminal modulates the conductivity between the drain and source.
3. Drain (D): Pin 3 and sometimes pin 6 are typically used as the drain, where current exits the MOSFET. It is connected to the load and is controlled by the gate voltage.
The FDS2582 is primarily used for switching and amplification in electronic circuits. Its low on-resistance makes it suitable for applications requiring efficient power handling.