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FDS6676AS
+BOMSMALL SIGNAL FIELD-EFFECT TRANSI
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メーカーフェアチャイルドセミコンダクター
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メーカー品番 #FDS6676AS
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在庫状況5852
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | PowerTrench®, SyncFET™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 14.5A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 6mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2510 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| BaseProductNumber | FDS66 |
概要
Description
The FDS6676AS is a dual N-channel MOSFET designed for high-efficiency switching applications. It features low on-resistance (R_DS(on)) and fast switching speeds, making it suitable for power management, DC-DC converters, and various automotive applications. The device operates at a maximum drain-source voltage (V_DS) of 30V and has a continuous drain current rating of up to 62A, depending on the thermal conditions.
With a compact SO-8 package, the FDS6676AS is optimized for space-constrained designs while providing excellent thermal performance. Its low gate threshold voltage (V_GS(th)) allows for efficient operation at lower drive voltages.
Additionally, the MOSFET is characterized by low gate charge (Q_g), enhancing switching efficiency and reducing power losses in high-frequency applications. Overall, the FDS6676AS is a reliable choice for engineers seeking to improve performance and efficiency in their electronic designs.
With a compact SO-8 package, the FDS6676AS is optimized for space-constrained designs while providing excellent thermal performance. Its low gate threshold voltage (V_GS(th)) allows for efficient operation at lower drive voltages.
Additionally, the MOSFET is characterized by low gate charge (Q_g), enhancing switching efficiency and reducing power losses in high-frequency applications. Overall, the FDS6676AS is a reliable choice for engineers seeking to improve performance and efficiency in their electronic designs.
Equivalent
The FDS6676AS is a dual N-channel MOSFET. Equivalent products include the IRF6660, BSS123, STS10NK50Z, and SI7460. For accurate replacements, consider specifications like voltage, current ratings, and package type. Always verify compatibility with your specific application.
Features
The FDS6676AS is a power MOSFET known for its high performance in various applications. Key features include:
1. Low On-Resistance: Ensures efficient power transfer with minimal heat generation.
2. High Current Rating: Capable of handling significant load currents, making it suitable for both high and low-side switching applications.
3. Fast Switching Speed: Reduces switching losses, enhancing overall efficiency in power supply designs.
4. Low Gate Charge: Enables quicker response times, simplifying driver requirements.
5. Thermal Resistance: Designed to dissipate heat effectively, contributing to improved reliability in high-temperature environments.
6. Compact Package: Typically available in a DPAK or similar package, allowing for easy integration into various circuit designs.
7. Robust Voltage Rating: Operates effectively across a wide range of voltages, accommodating diverse applications.
These features make the FDS6676AS ideal for use in power management systems, motor control, and other demanding electronic applications.
1. Low On-Resistance: Ensures efficient power transfer with minimal heat generation.
2. High Current Rating: Capable of handling significant load currents, making it suitable for both high and low-side switching applications.
3. Fast Switching Speed: Reduces switching losses, enhancing overall efficiency in power supply designs.
4. Low Gate Charge: Enables quicker response times, simplifying driver requirements.
5. Thermal Resistance: Designed to dissipate heat effectively, contributing to improved reliability in high-temperature environments.
6. Compact Package: Typically available in a DPAK or similar package, allowing for easy integration into various circuit designs.
7. Robust Voltage Rating: Operates effectively across a wide range of voltages, accommodating diverse applications.
These features make the FDS6676AS ideal for use in power management systems, motor control, and other demanding electronic applications.
Pinout
The FDS6676AS is a dual N-channel MOSFET in a 5x6 mm package, typically used in power management applications. It features a total of 8 pins.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Source (S) - Common source for both MOSFETs (usually tied to ground).
8. Drain (D) - Common drain for both MOSFETs (usually connected to load).
This configuration allows for efficient switching and power management in various electronic applications.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Source (S) - Common source for both MOSFETs (usually tied to ground).
8. Drain (D) - Common drain for both MOSFETs (usually connected to load).
This configuration allows for efficient switching and power management in various electronic applications.
Manufacturer
The FDS6676AS is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor focuses on providing a range of products, including power management, analog, and mixed-signal integrated circuits, as well as discrete devices. The company serves various markets such as automotive, industrial, communications, consumer electronics, and computing. Established in 1999, ON Semiconductor has grown through acquisitions and innovation, positioning itself as a leader in energy-efficient electronics. Their products are designed to facilitate the efficient conversion and management of power in a wide array of applications, aligning with the increasing demand for sustainability and energy efficiency in modern technology.
Application
The FDS6676AS is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Used in buck and boost converters for efficient voltage regulation.
2. Load Switching: Ideal for power distribution and load management in electronic devices.
3. Power Amplifiers: Utilized in RF and audio applications for signal amplification.
4. Battery Management Systems: Helps in switching and controlling battery charging and discharging processes.
5. Consumer Electronics: Found in devices like laptops, smartphones, and tablets for power efficiency.
Overall, it enhances performance and efficiency in various electronic circuits.
1. DC-DC Converters: Used in buck and boost converters for efficient voltage regulation.
2. Load Switching: Ideal for power distribution and load management in electronic devices.
3. Power Amplifiers: Utilized in RF and audio applications for signal amplification.
4. Battery Management Systems: Helps in switching and controlling battery charging and discharging processes.
5. Consumer Electronics: Found in devices like laptops, smartphones, and tablets for power efficiency.
Overall, it enhances performance and efficiency in various electronic circuits.
Package
The FDS6676AS is packaged in a SO-8 (Small Outline) package type. This surface-mount package is designed for efficient thermal performance and compact layout in circuit boards.
