FDS86242

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FDS86242

+BOM

MOSFET N-CH 150V 4.1A 8SOIC

  • メーカーオンセミコンダクター社

  • メーカー品番 #FDS86242

  • パッケージ SOIC-8

  • 在庫状況7158

365 日間品質保証

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1日間のアフターサービス保証

仕様

属性
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 4.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 67mOhm @ 4.1A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 760 pF @ 75 V
PowerDissipation(Max) 2.5W (Ta), 5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

概要

Description

The FDS86242 is a dual N-channel PowerTrench MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing conduction losses.
- Fast Switching: Optimized for high-frequency DC-DC converters and motor control.
- Compact Package: Typically housed in a SOIC-8 footprint, saving board space.
- Low Gate Charge (Qg): Reduces drive requirements, improving performance in switching circuits.
Common applications include synchronous rectification, load switching, and battery protection in portable electronics, servers, and automotive systems.
For detailed specs, refer to the datasheet for voltage/current ratings (e.g., 30V drain-source voltage). Always verify compatibility with your design.

Equivalent

The FDS86242 is a dual N-channel MOSFET. Equivalent alternatives include:
- FDS86255 (Similar specs, lower RDS(on))
- SI7144DP (Vishay, comparable performance)
- IRF7314PbF (International Rectifier, dual N-channel)
- DMN2019LSD (Diodes Inc., SOT-23 alternative)
Check datasheets for exact compatibility in your application.

Features

The FDS86242 is an N-channel PowerTrench MOSFET with the following key features:
- Voltage Rating: 40V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 2.4mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency applications
- Low Gate Charge (Qg): Reduces switching losses
- Avalanche Energy Rated: Enhances ruggedness
- Thermal Performance: Low thermal resistance
- Package: SO-8 (compact and space-saving)
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and computing applications.

Pinout

The FDS86242 is a dual N-channel PowerTrench MOSFET in an 8-pin SOIC package.
Pin Count: 8 pins (4 pins per MOSFET, with shared source connections).
Key Functions:
- Pins 1, 2, 7, 8: Drain (D) for each MOSFET.
- Pins 3, 6: Gate (G) inputs for independent control.
- Pins 4, 5: Common Source (S) connected internally.
Applications:
- High-efficiency synchronous buck converters.
- Power management in DC-DC circuits.
Features:
- Low on-resistance (RDS(on)).
- Fast switching for reduced power loss.

Package

The FDS86242 is a PowerTrench MOSFET typically available in an SO-8 (SOIC-8) package. This surface-mount package is compact and widely used for power management applications. It offers good thermal performance and is suitable for high-efficiency switching.

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