FFH60UP60S3

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FFH60UP60S3

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DIODE GEN PURP 600V 60A TO247

  • メーカーオンセミコンダクター社

  • メーカー品番 #FFH60UP60S3

  • パッケージ TO-247-3

  • 在庫状況2083

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Package Tube
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 600 V
Current-AverageRectified(Io) 60A
Voltage-Forward(Vf)(Max)@If 1.7 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 80 ns
Current-ReverseLeakage@Vr 100 µA @ 600 V
MountingType Through Hole
Package/Case TO-247-3
SupplierDevicePackage TO-247-3

概要

Description

The FFH60UP60S3 is a high-performance field-stop insulated-gate bipolar transistor (IGBT) designed for use in power electronics applications. This component is known for its efficient energy handling, making it ideal for systems that require high power levels with minimal loss. It features a robust design that ensures reliability and durability in demanding environments.
Key characteristics of the FFH60UP60S3 include a low saturation voltage, which enhances efficiency, and a fast switching capability, which reduces energy loss during transitions. It also has a high current capacity, typically around 60A, and can handle significant voltage levels, up to 600V. These properties make it suitable for applications such as motor drives, power inverters, and other industrial applications that require efficient power conversion.
The FFH60UP60S3 often comes with built-in protection features that guard against over-current and thermal overload, ensuring safe operation. Its compact design also facilitates integration into various electronic systems, making it a versatile choice for engineers looking to optimize performance in power management solutions.

Equivalent

The FFH60UP60S3 is a high-speed, high-current insulated gate bipolar transistor (IGBT). Equivalent products might include similar IGBTs from other manufacturers that match its voltage and current ratings, such as the STMicroelectronics STGW60H60DFB, Infineon's IKQ60N60H3, or ON Semiconductor's IKW60N60T. Always verify the specifications like current, voltage, and switching frequency to ensure compatibility for your specific application.

Features

The FFH60UP60S3 is a semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module, designed for high-efficiency power switching applications. Key features include:
1. Voltage and Current Ratings: It typically supports high voltage (up to 600V) and current capacities (60A), making it suitable for demanding applications.
2. Switching Speed: Designed for fast switching, which minimizes power loss during transitions and increases efficiency.
3. Thermal Management: Equipped with efficient thermal dissipation capabilities to maintain performance and reliability under high power conditions.
4. Robust Design: Built to withstand challenging environments and offer long operational life.
5. Protection Features: May include built-in protection mechanisms such as over-temperature and short-circuit protection to prevent damage under fault conditions.
6. Applications: Commonly used in motor drives, inverters, and other power electronics where efficient and reliable switching is critical.
Please refer to the manufacturer's datasheet for precise specifications and operational limits.

Pinout

The FFH60UP60S3 is a high-speed soft recovery diode module. This specific component is typically used in power electronics applications, particularly in inverters and converters for its ability to handle high current and voltage levels efficiently.
As for the pin count and function, the FFH60UP60S3 usually features three main terminals:
1. Anode (A): This is the positive terminal through which current flows into the diode.
2. Cathode (K): This is the negative terminal where the current exits the diode.
3. Cathode (K): The module may have dual cathode pins for improved current handling and distribution, this is common in high-power modules.
These diodes are designed for applications requiring fast recovery times and are optimized for high-speed switching, making them suitable for reducing power loss and enhancing efficiency in power electronic systems.

Manufacturer

The FFH60UP60S3 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was a prominent American company known for designing, manufacturing, and selling semiconductors. It played a crucial role in the development of the modern semiconductor industry and was one of the original companies in Silicon Valley. In 2016, Fairchild was acquired by ON Semiconductor, a company that specializes in power and signal management, logic, discrete, and custom devices for a wide range of applications. ON Semiconductor is a global leader in the semiconductor industry, focusing on energy-efficient solutions and serving diverse markets such as automotive, industrial, cloud, and IoT.

Application

The FFH60UP60S3 is an ultra-fast recovery diode commonly used in power electronics. Its primary application areas include:
1. Switching Power Supplies: Enhances efficiency in AC/DC converters by reducing recovery time.
2. Inverters: Utilized in solar inverters and motor drives to improve performance and reduce losses.
3. PFC Circuits: Employed in power factor correction circuits to achieve higher efficiency.
4. UPS Systems: Used for efficient power conversion in uninterruptible power supplies.
5. Induction Heating: Suitable for high-frequency induction heating systems due to its fast recovery characteristics.
These applications benefit from its high efficiency, fast recovery time, and low reverse recovery losses.

Package

The FFH60UP60S3 is a semiconductor device, specifically an ultrafast recovery diode. It typically comes in a TO-247 package, which is commonly used for high-power devices due to its ability to handle significant heat and power dissipation.

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