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FGA30S120P
+BOMINSULATED GATE BIPOLAR TRANSISTO
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メーカーフェアチャイルドセミコンダクター
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メーカー品番 #FGA30S120P
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データシート FGA30S120P DataSheet
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パッケージ TO-3PN
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在庫状況1243
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Bulk |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 1300 V |
| Current-Collector(Ic)(Max) | 60 A |
| Current-CollectorPulsed(Icm) | 150 A |
| Vce(on)(Max)@VgeIc | 2.3V @ 15V, 30A |
| Power-Max | 348 W |
| InputType | Standard |
| GateCharge | 78 nC |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
概要
Description
The FGA30S120P is a power semiconductor device known as an Insulated Gate Bipolar Transistor (IGBT). It is designed for high-efficiency power switching applications, combining the high-speed performance of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. The device is typically used in applications such as motor drives, inverters, power supplies, and other high-power electronic systems.
Key features of the FGA30S120P include a 1200V maximum collector-emitter voltage, 30A continuous collector current, and low saturation voltage, which contribute to reduced conduction losses. Its fast switching speed helps improve overall efficiency in high-frequency applications. The device is housed in a TO-247 package, offering robust thermal performance and ease of integration into existing circuit designs.
Overall, the FGA30S120P is valued for its reliability, efficiency, and versatility in managing high voltage and current levels, making it a popular choice in demanding power electronics applications.
Key features of the FGA30S120P include a 1200V maximum collector-emitter voltage, 30A continuous collector current, and low saturation voltage, which contribute to reduced conduction losses. Its fast switching speed helps improve overall efficiency in high-frequency applications. The device is housed in a TO-247 package, offering robust thermal performance and ease of integration into existing circuit designs.
Overall, the FGA30S120P is valued for its reliability, efficiency, and versatility in managing high voltage and current levels, making it a popular choice in demanding power electronics applications.
Equivalent
The FGA30S120P is an IGBT (Insulated Gate Bipolar Transistor) designed for high-speed switching applications. Equivalent products may include:
1. Infineon IKW30N120T2
2. ON Semiconductor FGL40N120AND
3. STMicroelectronics STGW30NC120VD
4. Fuji Electric 2MBI50N-060
Always verify electrical parameters and package compatibility when considering equivalents.
1. Infineon IKW30N120T2
2. ON Semiconductor FGL40N120AND
3. STMicroelectronics STGW30NC120VD
4. Fuji Electric 2MBI50N-060
Always verify electrical parameters and package compatibility when considering equivalents.
Features
The FGA30S120P is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power switching applications. Key features include:
1. Voltage and Current Ratings: It has a collector-emitter voltage (V_CE) of 1200V and a continuous collector current (I_C) of 60A, making it suitable for high-voltage applications.
2. Switching Speed: Offers fast switching capabilities, which help minimize energy loss during transitions, enhancing overall efficiency.
3. Low On-State Voltage Drop: This feature reduces power dissipation and improves efficiency during operation.
4. High Efficiency: Optimized for reduced conduction and switching losses, suitable for applications requiring high efficiency.
5. Thermal Performance: The device is designed to handle significant thermal stress, enhancing reliability and lifespan in demanding environments.
6. Rugged Design: Engineered to withstand harsh electrical environments, providing robustness and durability.
These features make the FGA30S120P ideal for applications like motor drives, inverters, and power supplies where high efficiency and reliability are critical.
1. Voltage and Current Ratings: It has a collector-emitter voltage (V_CE) of 1200V and a continuous collector current (I_C) of 60A, making it suitable for high-voltage applications.
2. Switching Speed: Offers fast switching capabilities, which help minimize energy loss during transitions, enhancing overall efficiency.
3. Low On-State Voltage Drop: This feature reduces power dissipation and improves efficiency during operation.
4. High Efficiency: Optimized for reduced conduction and switching losses, suitable for applications requiring high efficiency.
5. Thermal Performance: The device is designed to handle significant thermal stress, enhancing reliability and lifespan in demanding environments.
6. Rugged Design: Engineered to withstand harsh electrical environments, providing robustness and durability.
These features make the FGA30S120P ideal for applications like motor drives, inverters, and power supplies where high efficiency and reliability are critical.
Pinout
The FGA30S120P is an Insulated Gate Bipolar Transistor (IGBT) module. It typically comes in a TO-247 package. For this specific package, the pin count is usually 3, corresponding to the following functions:
1. Collector (C): This is the main terminal for the flow of current from the collector to the emitter when the IGBT is in the on-state.
2. Emitter (E): This terminal is connected to the load, completing the circuit for current flow through the IGBT when it is turned on.
3. Gate (G): This is the control terminal used to turn the IGBT on or off. A voltage applied to the gate controls the conductivity between the collector and emitter.
These pins facilitate the primary operation of the IGBT, allowing it to switch electrical power efficiently in various applications such as inverters, motor drives, and power supplies. Always refer to the manufacturer's datasheet for precise technical details and specifications.
1. Collector (C): This is the main terminal for the flow of current from the collector to the emitter when the IGBT is in the on-state.
2. Emitter (E): This terminal is connected to the load, completing the circuit for current flow through the IGBT when it is turned on.
3. Gate (G): This is the control terminal used to turn the IGBT on or off. A voltage applied to the gate controls the conductivity between the collector and emitter.
These pins facilitate the primary operation of the IGBT, allowing it to switch electrical power efficiently in various applications such as inverters, motor drives, and power supplies. Always refer to the manufacturer's datasheet for precise technical details and specifications.
Manufacturer
The FGA30S120P is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a global semiconductor company that designs, manufactures, and supplies a wide range of semiconductor components. Its products include power and signal management, logic, discrete, and custom devices for various applications, including automotive, industrial, consumer electronics, computing, and communications. The company focuses on energy-efficient solutions and plays a significant role in the electronics supply chain, catering to a broad customer base worldwide.
Application
The FGA30S120P is an Insulated Gate Bipolar Transistor (IGBT) with a 1200V rating and is often used in power electronics applications. Its primary application areas include:
1. Inverters: For solar power systems and motor drives.
2. Switch Mode Power Supplies (SMPS): Efficient power conversion.
3. Uninterruptible Power Supplies (UPS): Reliable power backup systems.
4. Industrial Motor Drives: Controlling motors in industrial applications.
5. Welding Equipment: Precise energy control in welding machinery.
6. HVAC Systems: Efficient control of heating, ventilation, and air conditioning units.
These applications benefit from the FGA30S120P's high efficiency and fast switching capabilities.
1. Inverters: For solar power systems and motor drives.
2. Switch Mode Power Supplies (SMPS): Efficient power conversion.
3. Uninterruptible Power Supplies (UPS): Reliable power backup systems.
4. Industrial Motor Drives: Controlling motors in industrial applications.
5. Welding Equipment: Precise energy control in welding machinery.
6. HVAC Systems: Efficient control of heating, ventilation, and air conditioning units.
These applications benefit from the FGA30S120P's high efficiency and fast switching capabilities.
Package
The FGA30S120P is an IGBT (Insulated Gate Bipolar Transistor) and typically comes in a TO-3P package type. This package is designed for high-power applications and provides efficient thermal performance, making it suitable for various industrial and electronic applications.
