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FM18W08-SG
+BOMIC FRAM 256KBIT PARALLEL 28SOIC
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メーカーオーラセミ社
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メーカー品番 #FM18W08-SG
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データシート FM18W08-SG DataSheet
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パッケージ SOIC-28
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在庫状況1307
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tube |
| Series | F-RAM™ |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 256Kb (32K x 8) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 130ns |
| Voltage-Supply | 2.7V ~ 5.5V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 28-SOIC (0.295, 7.50mm Width) |
概要
Description
For instance, if FM18W08-SG is a type of electronic component, the introduction might highlight its function within a circuit, its technical specifications (such as voltage, current, or frequency), and its advantages over similar components. Additionally, the introduction would mention the industries or scenarios where the component is commonly used.
If FM18W08-SG pertains to a module or course, the introduction could outline its objectives, the topics covered, and the skills or knowledge participants can expect to gain. Moreover, it would briefly mention the target audience and any prerequisites required for participation.
To provide a more accurate and detailed introduction, additional information about FM18W08-SG's nature and context would be necessary.
Equivalent
1. Cypress (now part of Infineon) CY15B104Q or CY15B104Q-SXA.
2. Fujitsu MB85R1001A series.
3. Adesto Technologies (now part of Dialog Semiconductor) AT25DN series.
Ensure compatibility by checking memory size, interface, voltage requirements, and package type. Always refer to the most recent datasheets for details.
Features
1. Memory Capacity: It typically offers 8K x 8-bit memory configuration, providing a total of 64Kb storage.
2. Non-Volatile: Retains data without power, combining the speed of RAM with the non-volatility of traditional ROM.
3. High Endurance: Supports virtually unlimited read/write cycles, often in the range of 10^14 cycles, making it extremely durable.
4. Fast Write Speed: Writes data at bus speed with no write delays, significantly faster than EEPROM or Flash.
5. Low Power Consumption: Operates efficiently with minimal power usage, suitable for battery-operated applications.
6. Wide Voltage Range: Operates typically over a voltage range of 2.0V to 3.6V.
7. Data Reliability: Offers high data retention, usually rated for over 10 years.
8. Interface: Uses a standard parallel interface for easy integration into existing systems.
9. RoHS Compliance: Environmentally friendly, adhering to Restriction of Hazardous Substances Directive standards.
These features make the FM18W08-SG suitable for applications requiring rapid, reliable data storage with frequent access.
Pinout
Key functions and pin details include:
- Address Pins (A0-A14): Used to specify the memory address for data access.
- Data Pins (DQ0-DQ7): Bi-directional data input/output pins for reading data from or writing data to the memory.
- Chip Enable (CE): Activates the chip, allowing for read and write operations.
- Write Enable (WE): Controls the write operations to the memory.
- Output Enable (OE): Controls the data output buffers, enabling data read operations.
- Lower Voltage Detector (LVD): Monitors the supply voltage.
- Power Supply (VDD) and Ground (VSS): Provide power to the chip.
The FM18W08-SG offers fast write speeds, low power consumption, and high endurance, making it suitable for applications requiring frequent and rapid data changes.