仕様
| 属性 | 値 |
| Package | Bulk,Tube |
| Series | F-RAM™ |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 2Mb (256K x 8) |
| MemoryInterface | SPI |
| ClockFrequency | 40 MHz |
| Voltage-Supply | 2V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-WDFN Exposed Pad |
概要
Description
The FM25V20A-DG is a 256-Kilobit non-volatile FRAM (Ferroelectric Random Access Memory) with a 2.0-3.6V power supply range, designed by Cypress Semiconductor. This memory device offers the advantages of both RAM and ROM technologies. It provides high-speed write capabilities and unlimited read/write cycles, making it ideal for applications requiring frequent data logging or updates.
Key features of the FM25V20A-DG include:
1. Non-volatility: Retains data without a power supply, ensuring data persistence.
2. Fast Write Speed: Allows instantaneous data writing, unlike traditional EEPROMs.
3. High Endurance: Supports virtually unlimited read/write cycles (up to 10^14 cycles).
4. SPI Interface: Communicates via a Serial Peripheral Interface (SPI), facilitating easy integration into microcontroller-based designs.
5. Low Power Consumption: Operates efficiently with low power requirements.
6. Industrial Temperature Range: Suitable for environments ranging from -40°C to +85°C.
This FRAM device is commonly used in industrial, automotive, and consumer electronics applications, providing reliable data storage solutions where frequent updates and data retention are critical.
Key features of the FM25V20A-DG include:
1. Non-volatility: Retains data without a power supply, ensuring data persistence.
2. Fast Write Speed: Allows instantaneous data writing, unlike traditional EEPROMs.
3. High Endurance: Supports virtually unlimited read/write cycles (up to 10^14 cycles).
4. SPI Interface: Communicates via a Serial Peripheral Interface (SPI), facilitating easy integration into microcontroller-based designs.
5. Low Power Consumption: Operates efficiently with low power requirements.
6. Industrial Temperature Range: Suitable for environments ranging from -40°C to +85°C.
This FRAM device is commonly used in industrial, automotive, and consumer electronics applications, providing reliable data storage solutions where frequent updates and data retention are critical.
Equivalent
The FM25V20A-DG is a 256 Kbit F-RAM (Ferroelectric RAM) chip by Cypress Semiconductor. Equivalent products may include other 256 Kbit F-RAM chips like those from companies such as Fujitsu and Ramtron. Specific models could be the Fujitsu MB85RS256A or Ramtron FM25V20. However, always check for pin compatibility and electrical specifications to ensure they meet your design requirements.
Features
The FM25V20A-DG is a non-volatile F-RAM memory chip produced by Cypress Semiconductor. It features a 256K x 8-bit memory configuration, providing 2-Mb of storage. Key features include:
1. High Endurance: It supports virtually unlimited read/write cycles, making it highly durable compared to traditional EEPROM and Flash memory.
2. Fast Write Speed: Data can be written at bus speed with no delay, unlike EEPROM which requires write delays.
3. Non-Volatile: Retains data for over 151 years without power, ensuring long-term data preservation.
4. Low Power Consumption: Operates efficiently with a low power requirement, suitable for battery-powered applications.
5. Wide Voltage Range: Operates at a supply voltage of 2.0V to 3.6V, offering flexibility for various applications.
6. SPI Interface: Uses a Serial Peripheral Interface (SPI) for communication, simplifying integration with microcontrollers.
7. RoHS Compliant: Environmentally friendly with lead-free packaging.
These features make the FM25V20A-DG ideal for applications requiring frequent and rapid data storage and retrieval, such as data logging, industrial controls, and consumer electronics.
1. High Endurance: It supports virtually unlimited read/write cycles, making it highly durable compared to traditional EEPROM and Flash memory.
2. Fast Write Speed: Data can be written at bus speed with no delay, unlike EEPROM which requires write delays.
3. Non-Volatile: Retains data for over 151 years without power, ensuring long-term data preservation.
4. Low Power Consumption: Operates efficiently with a low power requirement, suitable for battery-powered applications.
5. Wide Voltage Range: Operates at a supply voltage of 2.0V to 3.6V, offering flexibility for various applications.
6. SPI Interface: Uses a Serial Peripheral Interface (SPI) for communication, simplifying integration with microcontrollers.
7. RoHS Compliant: Environmentally friendly with lead-free packaging.
These features make the FM25V20A-DG ideal for applications requiring frequent and rapid data storage and retrieval, such as data logging, industrial controls, and consumer electronics.
Pinout
The FM25V20A-DG is a 2-Mbit (256K x 8) FRAM memory chip that is produced by Cypress Semiconductor (now part of Infineon Technologies). It is packaged in an 8-pin SOIC (Small Outline Integrated Circuit) package. Here is a brief overview of its pin count and functions:
1. CS (Chip Select): Activates the device when low.
2. SCK (Serial Clock): Synchronizes the communication between the device and the microcontroller.
3. SI (Serial Input): Input pin for data and opcodes.
4. SO (Serial Output): Output pin for data from the device.
5. WP (Write Protect): Protects the memory from write operations when low.
6. HOLD: Pauses the serial communication without deselecting the device.
7. VSS: Ground reference for the device.
8. VDD: Supply voltage pin.
The FM25V20A-DG is part of the FRAM family, known for its non-volatile memory, fast write speeds, and high endurance, making it suitable for data logging and other applications requiring frequent writes.
1. CS (Chip Select): Activates the device when low.
2. SCK (Serial Clock): Synchronizes the communication between the device and the microcontroller.
3. SI (Serial Input): Input pin for data and opcodes.
4. SO (Serial Output): Output pin for data from the device.
5. WP (Write Protect): Protects the memory from write operations when low.
6. HOLD: Pauses the serial communication without deselecting the device.
7. VSS: Ground reference for the device.
8. VDD: Supply voltage pin.
The FM25V20A-DG is part of the FRAM family, known for its non-volatile memory, fast write speeds, and high endurance, making it suitable for data logging and other applications requiring frequent writes.
Manufacturer
The FM25V20A-DG is manufactured by Cypress Semiconductor Corporation. Cypress is a technology company that specializes in designing and producing a wide range of semiconductor products. The company's portfolio includes solutions for automotive, industrial, consumer, and enterprise sectors, including microcontrollers, memory products, and wireless connectivity components. Cypress was known for its innovations in memory technologies, including non-volatile RAM like the FM25V20A-DG, which is a 256-Kbit ferroelectric RAM (F-RAM) product. As of 2020, Cypress Semiconductor was acquired by Infineon Technologies, a German semiconductor manufacturer, expanding its reach and resources in the semiconductor industry.
Application
The FM25V20A-DG is a 256-Kbit non-volatile F-RAM memory device. It is used in applications that require high-speed data writing and reliability. Common application areas include industrial control systems, where data integrity is crucial, and in data logging for automotive systems, where rapid data capture is essential. It is also used in medical devices for secure and fast data storage, and in metering systems for reliable data retention without battery backup. Additionally, FM25V20A-DG is utilized in consumer electronics and telecommunications for efficient data handling and low power consumption. Its endurance and fast write capabilities make it ideal for environments where frequent data updates are necessary.
Package
The FM25V20A-DG is a 2Mbit FRAM memory chip typically available in an 8-pin SOIC (Small Outline Integrated Circuit) package type.
