FP15R06KL4

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FP15R06KL4

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  • メーカー品番 #FP15R06KL4

  • データシート FP15R06KL4 DataSheet

  • 在庫状況9251

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仕様

属性
MountingStyle Screw Mount
Package/Case EasyPIM2
Technology Si
MinimumOperatingTemperature - 40 C
MaximumOperatingTemperature + 125 C
Packaging Tray
Brand Infineon Technologies
ProductType IGBT Modules
Subcategory IGBTs
Configuration Hex
Height 17 mm
Length 55.9 mm
Product IGBT Silicon Modules
FactoryPackQuantity:FactoryPackQuantity 20
Width 45.6 mm
Part#Aliases SP000100272 FP15R06KL4BOMA1
UnitWeight 4.343812 oz
ShippingRestrictions Mouser does not presently sell this product in your region.
Collector-EmitterVoltageVCEOMax 600 V
ContinuousCollectorCurrentat25C 20 A
MaximumGateEmitterVoltage 20 V
Collector-EmitterSaturationVoltage 1.95 V
Gate-EmitterLeakageCurrent 400 nA
Pd-PowerDissipation 78 W

概要

Description

FP15R06KL4 is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, such as power management and switching. It features low on-resistance, which reduces power loss and enhances efficiency in circuits, making it suitable for applications in automotive, industrial, and consumer electronics. The device typically supports high current and voltage ratings, enabling it to handle demanding load conditions effectively.
Key specifications often include a maximum drain-source voltage (V_DS) around 60V, with the ability to carry continuous drain currents that can exceed 15A. Its fast switching capabilities make it ideal for use in converters, inverters, and other high-frequency applications. The FP15R06KL4 is usually packaged in a TO-220 or similar format, facilitating easy integration into circuit boards. Overall, it provides robust performance for designers seeking reliability and efficiency in their power electronics solutions.

Equivalent

The FP15R06KL4 is an IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include the Fujitsu FGA15N120, Infineon FZ1200R12KF4, and Mitsubishi CM150DY-24NF. Other potential alternatives could come from brands like ON Semiconductor or STMicroelectronics, depending on specific application requirements such as voltage ratings, current ratings, and switching characteristics. Always consult datasheets for detailed specifications.

Features

The FP15R06KL4 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum collector-emitter voltage (VCE) of 600V, making it suitable for various medium-voltage applications.
2. Current Rating: The device can handle a continuous collector current (IC) of 15A, offering reliable performance in demanding conditions.
3. Low Switching Losses: Optimized for reduced switching losses, the FP15R06KL4 enhances overall system efficiency, particularly in PWM (Pulse Width Modulation) applications.
4. Thermal Performance: It boasts a low thermal resistance, aiding in effective heat dissipation and improving reliability in power circuits.
5. Fast Switching Speed: The IGBT features a fast switching capability, which is beneficial for applications like inverters and motor drives.
6. Package Type: Typically housed in a TO-220 or similar package, facilitating easy mounting and integration into power modules.
These features make the FP15R06KL4 ideal for applications in renewable energy systems, industrial drives, and automotive sectors.

Pinout

The FP15R06KL4 is an IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon. It features a total of 15 pins. The pin configuration includes connections for the gate, emitter, and collector, allowing for efficient control and operation within power electronics applications.
Specifically, the pins are typically arranged for connections as follows:
- Gate (G): Controls the switching of the IGBT.
- Emitter (E): Connects to the source side of the circuit.
- Collector (C): Connects to the load side.
The module is designed for high power applications, providing low conduction and switching losses, making it suitable for uses in industrial drives, renewable energy systems, and power converters.

Manufacturer

The FP15R06KL4 is manufactured by Infineon Technologies AG, a leading global semiconductor company based in Germany. Infineon specializes in various electronic components and systems, focusing on power management, automotive, industrial, and security applications. Their product portfolio includes power semiconductors, microcontrollers, sensors, and other components that enable efficient energy management and connectivity in a wide range of applications. Infineon is known for its commitment to innovation and sustainability, providing solutions that help enhance energy efficiency and reduce emissions across various industries.

Application

The FP15R06KL4 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications. Its primary application areas include:
1. Industrial Drives: Used in motor control for various machinery.
2. Power Inverters: Common in renewable energy systems, especially solar inverters.
3. Welding Equipment: Employed in arc welding and other industrial welding processes.
4. UPS Systems: Utilized in uninterruptible power supplies for reliable energy management.
5. HVAC Systems: Applied in heating, ventilation, and air conditioning systems for efficient control.
These applications leverage its high efficiency, fast switching capabilities, and robust performance.

Package

The FP15R06KL4 is packaged in a DPAK (TO-252) format. This type of package is commonly used for power semiconductor devices, providing good thermal performance and efficiency in a compact size.

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