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FQA32N20C
+BOMMOSFET N-CH 200V 32A TO3PN
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メーカーオンセミコンダクター社
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メーカー品番 #FQA32N20C
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データシート FQA32N20C DataSheet
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在庫状況23830
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 32A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 82mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2220 pF @ 25 V |
| Power Dissipation (Max) | 204W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
概要
Description
The FQA32N20C is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor, now part of the larger semiconductor company, onsemi. This component functions primarily as a switch or amplifier in electronic circuits.
Key specifications of the FQA32N20C include:
- Voltage Rating: It can handle a maximum drain-source voltage (V_ds) of 200V.
- Current Rating: The maximum continuous drain current (I_d) is 32A.
- R_DS(on): The on-resistance is approximately 0.07 ohms, indicating relatively low energy loss when the MOSFET is in the 'on' state.
- Package Type: Typically available in a TO-3P package, which allows for efficient thermal management and ease of mounting onto a heatsink.
- Applications: It is often used in power supply circuits, motor drives, and other high-power applications due to its high current and voltage handling capabilities.
The FQA32N20C's design focuses on efficiency and reliability, making it suitable for various demanding applications in industrial and consumer electronics.
Key specifications of the FQA32N20C include:
- Voltage Rating: It can handle a maximum drain-source voltage (V_ds) of 200V.
- Current Rating: The maximum continuous drain current (I_d) is 32A.
- R_DS(on): The on-resistance is approximately 0.07 ohms, indicating relatively low energy loss when the MOSFET is in the 'on' state.
- Package Type: Typically available in a TO-3P package, which allows for efficient thermal management and ease of mounting onto a heatsink.
- Applications: It is often used in power supply circuits, motor drives, and other high-power applications due to its high current and voltage handling capabilities.
The FQA32N20C's design focuses on efficiency and reliability, making it suitable for various demanding applications in industrial and consumer electronics.
Equivalent
The FQA32N20C is a N-channel MOSFET. Equivalent products may include:
1. IRFP250N
2. IRFP260N
3. IRF3205
4. STP55NF06
5. FDP036N10
Always verify specifications and manufacturer datasheets to ensure compatibility in your specific application.
1. IRFP250N
2. IRFP260N
3. IRF3205
4. STP55NF06
5. FDP036N10
Always verify specifications and manufacturer datasheets to ensure compatibility in your specific application.
Features
The FQA32N20C is a N-channel MOSFET known for its efficiency and reliability in a variety of applications. Here are some key features:
1. Drain-Source Voltage (V_DS): It has a maximum V_DS rating of 200V, making it suitable for medium voltage applications.
2. Continuous Drain Current (I_D): The MOSFET can handle up to 32A continuously, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-state resistance, typically around 0.06 ohms, which helps in minimizing power losses and improving efficiency.
4. Gate Threshold Voltage (V_GS): The threshold voltage ranges typically from 2V to 4V, enabling easier drive requirements.
5. Package Type: Available in TO-220, which is a common package offering good thermal performance and ease of mounting.
6. Temperature Range: It can operate over a wide temperature range, typically from -55°C to 175°C.
7. Applications: Commonly used in switching applications, power supplies, and motor control.
These features make the FQA32N20C a versatile choice for various electronic and power management applications.
1. Drain-Source Voltage (V_DS): It has a maximum V_DS rating of 200V, making it suitable for medium voltage applications.
2. Continuous Drain Current (I_D): The MOSFET can handle up to 32A continuously, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-state resistance, typically around 0.06 ohms, which helps in minimizing power losses and improving efficiency.
4. Gate Threshold Voltage (V_GS): The threshold voltage ranges typically from 2V to 4V, enabling easier drive requirements.
5. Package Type: Available in TO-220, which is a common package offering good thermal performance and ease of mounting.
6. Temperature Range: It can operate over a wide temperature range, typically from -55°C to 175°C.
7. Applications: Commonly used in switching applications, power supplies, and motor control.
These features make the FQA32N20C a versatile choice for various electronic and power management applications.
Pinout
The FQA32N20C is a N-channel MOSFET. It typically has a 3-pin configuration. The pin count is as follows:
1. Drain (D): This is the primary terminal for the drain current when the MOSFET is conducting. It is usually connected to the load.
2. Gate (G): This terminal controls the MOSFET's on and off states. A voltage applied to the gate switches the MOSFET from non-conductive (off) to conductive (on).
3. Source (S): This terminal is connected to the source of electrons (for N-channel), and current flows through this terminal when the MOSFET is conducting.
The FQA32N20C is designed for high-efficiency power management applications, including switching and amplification. It is typically used in environments where high-speed switching and low loss are critical.
1. Drain (D): This is the primary terminal for the drain current when the MOSFET is conducting. It is usually connected to the load.
2. Gate (G): This terminal controls the MOSFET's on and off states. A voltage applied to the gate switches the MOSFET from non-conductive (off) to conductive (on).
3. Source (S): This terminal is connected to the source of electrons (for N-channel), and current flows through this terminal when the MOSFET is conducting.
The FQA32N20C is designed for high-efficiency power management applications, including switching and amplification. It is typically used in environments where high-speed switching and low loss are critical.
Manufacturer
The FQA32N20C is a power MOSFET manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is an American semiconductor supplier company. It produces a broad range of semiconductor components, including power and signal management, logic, discrete, and custom devices for various industries such as automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace markets. onsemi is recognized for its focus on energy-efficient electronics and solutions that address global challenges such as sustainability, electrification, and smart technology applications.
Application
The FQA32N20C is a N-channel MOSFET designed for high-speed switching applications. Its key application areas include:
1. Power Supplies: Utilized in both AC-DC and DC-DC converters for efficient power management.
2. Motor Drives: Employed in controlling motors in industrial and consumer electronics.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
4. Automotive Applications: Suitable for electric vehicle systems and automotive electronics.
5. Renewable Energy Systems: Applied in wind and solar energy systems for switching and power regulation.
Its low on-resistance and fast switching capabilities make it ideal for applications requiring high efficiency and reliability.
1. Power Supplies: Utilized in both AC-DC and DC-DC converters for efficient power management.
2. Motor Drives: Employed in controlling motors in industrial and consumer electronics.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
4. Automotive Applications: Suitable for electric vehicle systems and automotive electronics.
5. Renewable Energy Systems: Applied in wind and solar energy systems for switching and power regulation.
Its low on-resistance and fast switching capabilities make it ideal for applications requiring high efficiency and reliability.
Package
The FQA32N20C is a power MOSFET typically housed in a TO-3P package. This package type is designed for high-power applications and provides efficient heat dissipation.
