仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 33.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 16.75A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 2910 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
概要
Description
The FQB34P10TM is a P-channel MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Voltage Rating: -100V
- Current Rating: -34A (continuous)
- Low On-Resistance (RDS(on)): 44mΩ (max) @ VGS = -10V
- Fast Switching Speed
- TO-252 (DPAK) Package
It is commonly used in DC-DC converters, motor control, and load switching due to its robust performance and thermal efficiency. The device is optimized for low gate drive requirements, making it suitable for battery-powered and energy-sensitive systems.
For detailed specifications, refer to the official datasheet.
- Voltage Rating: -100V
- Current Rating: -34A (continuous)
- Low On-Resistance (RDS(on)): 44mΩ (max) @ VGS = -10V
- Fast Switching Speed
- TO-252 (DPAK) Package
It is commonly used in DC-DC converters, motor control, and load switching due to its robust performance and thermal efficiency. The device is optimized for low gate drive requirements, making it suitable for battery-powered and energy-sensitive systems.
For detailed specifications, refer to the official datasheet.
Equivalent
The FQB34P10TM is a P-channel MOSFET (100V, 34A). Equivalent alternatives include:
- IRF9Z34N (100V, 19A)
- FQP27P06 (60V, 27A) – lower voltage
- STP80PF55 (55V, 80A) – higher current
- IRLML6401 (12V, 4.2A) – SMD alternative
Check datasheets for exact specs like RDS(on) and gate charge. For closer matches, consider FQB47P06 (60V, 47A) or SUP75P06-08 (60V, 75A). Always verify compatibility.
- IRF9Z34N (100V, 19A)
- FQP27P06 (60V, 27A) – lower voltage
- STP80PF55 (55V, 80A) – higher current
- IRLML6401 (12V, 4.2A) – SMD alternative
Check datasheets for exact specs like RDS(on) and gate charge. For closer matches, consider FQB47P06 (60V, 47A) or SUP75P06-08 (60V, 75A). Always verify compatibility.
Features
The FQB34P10TM is a P-channel MOSFET with the following key features:
- Voltage Rating: -100V (Drain-to-Source, VDSS)
- Current Rating: -34A (Continuous Drain Current, ID)
- Low On-Resistance: 44mΩ (RDS(on)) at VGS = -10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Gate Charge (Qg): 52nC (typical), reducing switching losses
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
Ideal for power management in DC-DC converters, motor control, and battery protection circuits.
- Voltage Rating: -100V (Drain-to-Source, VDSS)
- Current Rating: -34A (Continuous Drain Current, ID)
- Low On-Resistance: 44mΩ (RDS(on)) at VGS = -10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Gate Charge (Qg): 52nC (typical), reducing switching losses
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
Ideal for power management in DC-DC converters, motor control, and battery protection circuits.
Pinout
The FQB34P10TM is a P-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-252 / DPAK package: Gate (G), Drain (D), Source (S)).
- Function: Designed for power switching applications, it features:
- -100V drain-source voltage (VDS).
- -34A continuous drain current (ID).
- Low on-resistance (RDS(on)) of 50mΩ (max at VGS = -10V).
- Logic-level gate drive compatibility (VGS(th) ~ -2V to -4V).
Common uses include DC-DC converters, motor control, and load switching.
- Pin Count: 3 (TO-252 / DPAK package: Gate (G), Drain (D), Source (S)).
- Function: Designed for power switching applications, it features:
- -100V drain-source voltage (VDS).
- -34A continuous drain current (ID).
- Low on-resistance (RDS(on)) of 50mΩ (max at VGS = -10V).
- Logic-level gate drive compatibility (VGS(th) ~ -2V to -4V).
Common uses include DC-DC converters, motor control, and load switching.
Application
The FQB34P10TM is a P-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge circuits, servo drives.
3. Battery Protection – Reverse polarity and discharge control.
4. Load Switching – Power distribution in automotive/industrial systems.
5. Inverters & Converters – Renewable energy systems (solar/wind).
Its low on-resistance (RDS(on)) and high current handling (up to 34A) make it suitable for efficient power switching in compact designs.
1. Power Management – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge circuits, servo drives.
3. Battery Protection – Reverse polarity and discharge control.
4. Load Switching – Power distribution in automotive/industrial systems.
5. Inverters & Converters – Renewable energy systems (solar/wind).
Its low on-resistance (RDS(on)) and high current handling (up to 34A) make it suitable for efficient power switching in compact designs.
Package
The FQB34P10TM is a PowerTrench MOSFET from ON Semiconductor, available in a TO-263 (D2PAK) surface-mount package. This package type is designed for high-power applications, offering efficient thermal performance and a compact footprint. It is commonly used in power management, switching regulators, and motor control circuits. The TO-263 package features a metal tab for heat dissipation.
