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FQB8P10TM
+BOMPOWER FIELD-EFFECT TRANSISTOR, 8
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メーカーフェアチャイルドセミコンダクター
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メーカー品番 #FQB8P10TM
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データシート FQB8P10TM DataSheet
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パッケージ TO-263-3
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在庫状況4181
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Bulk |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 530mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 470 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 65W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) |
概要
Description
"Introduction to FQB8P10TM" likely refers to a specific module, component, or product within a particular field, given the alphanumeric designation. Without additional context, it is challenging to pinpoint its exact nature. However, such identifiers are commonly associated with electronic components, technical modules, or specialized products in industries like technology, engineering, or manufacturing.
The introduction to this component would typically cover its primary functions, technical specifications, applications, and advantages over similar products. It might also include guidance on integration, usage, and potential industry standards or certifications. If FQB8P10TM is part of a larger system or product line, understanding its role within that context is crucial for effective implementation.
For precise information, consulting the manufacturer's datasheet or technical documentation would be essential, as such resources provide comprehensive details tailored to the device or module's intended use.
The introduction to this component would typically cover its primary functions, technical specifications, applications, and advantages over similar products. It might also include guidance on integration, usage, and potential industry standards or certifications. If FQB8P10TM is part of a larger system or product line, understanding its role within that context is crucial for effective implementation.
For precise information, consulting the manufacturer's datasheet or technical documentation would be essential, as such resources provide comprehensive details tailored to the device or module's intended use.
Equivalent
The FQB8P10TM is a P-channel MOSFET transistor. Equivalent products include:
1. IRF9540N - by Infineon
2. RFP30P06 - by ON Semiconductor
3. STP40P10 - by STMicroelectronics
4. FQP27P06 - by ON Semiconductor
5. IPP80P03P4L-04 - by Infineon
These equivalents have similar voltage and current ratings, but always verify specific parameters and package compatibility for your application.
1. IRF9540N - by Infineon
2. RFP30P06 - by ON Semiconductor
3. STP40P10 - by STMicroelectronics
4. FQP27P06 - by ON Semiconductor
5. IPP80P03P4L-04 - by Infineon
These equivalents have similar voltage and current ratings, but always verify specific parameters and package compatibility for your application.
Features
The FQB8P10TM is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) notable for its specific features suitable for various electronic applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (V_ds) of up to -100V.
2. Current Rating: The continuous drain current (I_d) is rated at approximately -8A at 25°C, meaning it can handle relatively high current loads.
3. RDS(on): The on-state resistance (RDS(on)) is typically low, which ensures efficient current flow with minimal losses when the MOSFET is in the 'on' state.
4. Gate Threshold Voltage: It has a relatively low gate threshold voltage, which facilitates easy drive by low-voltage logic levels.
5. Package: Often available in a TO-252 (DPAK) surface-mount package, aiding in compact and efficient PCB designs.
6. Thermal Performance: It provides good thermal performance, suitable for applications requiring reliable heat dissipation.
These features make the FQB8P10TM suitable for applications like power management, switching regulators, and load switches.
1. Voltage Rating: It can handle a drain-source voltage (V_ds) of up to -100V.
2. Current Rating: The continuous drain current (I_d) is rated at approximately -8A at 25°C, meaning it can handle relatively high current loads.
3. RDS(on): The on-state resistance (RDS(on)) is typically low, which ensures efficient current flow with minimal losses when the MOSFET is in the 'on' state.
4. Gate Threshold Voltage: It has a relatively low gate threshold voltage, which facilitates easy drive by low-voltage logic levels.
5. Package: Often available in a TO-252 (DPAK) surface-mount package, aiding in compact and efficient PCB designs.
6. Thermal Performance: It provides good thermal performance, suitable for applications requiring reliable heat dissipation.
These features make the FQB8P10TM suitable for applications like power management, switching regulators, and load switches.
Pinout
The FQB8P10TM is an N-channel MOSFET. It typically comes in a TO-220 package, which usually has 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching state. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is where the main current flows out when the MOSFET is conducting. It's typically connected to the load in a circuit.
3. Source (S): This pin is connected to the source voltage for the MOSFET. Current flows from the source to the drain when the MOSFET is on.
The FQB8P10TM is designed for use in various power applications, leveraging its capability to handle significant current and voltage levels effectively. Always refer to the datasheet for specific electrical characteristics and application guidelines.
1. Gate (G): This pin is used to control the MOSFET's switching state. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is where the main current flows out when the MOSFET is conducting. It's typically connected to the load in a circuit.
3. Source (S): This pin is connected to the source voltage for the MOSFET. Current flows from the source to the drain when the MOSFET is on.
The FQB8P10TM is designed for use in various power applications, leveraging its capability to handle significant current and voltage levels effectively. Always refer to the datasheet for specific electrical characteristics and application guidelines.
Manufacturer
The FQB8P10TM is a P-channel MOSFET, and it is manufactured by ON Semiconductor. ON Semiconductor is a multinational company that specializes in designing, manufacturing, and marketing semiconductor components. These components are used in various electronics applications, including power management, automotive, communications, computing, consumer electronics, and industrial markets. As a key player in the semiconductor industry, ON Semiconductor focuses on providing energy-efficient and sustainable solutions across a wide range of sectors.
Application
The FQB8P10TM is a P-channel MOSFET used in various electronic applications. Its primary applications include:
1. Power Management: Used in power supply circuits for efficient switching and regulation.
2. Load Switching: Suitable for switching loads in battery-operated devices due to its low on-resistance.
3. Motor Control: Employed in driving motors in automotive and industrial applications.
4. DC-DC Converters: Utilized in step-down and step-up converters for voltage regulation.
5. Battery Protection: Helps in overcurrent and overvoltage protection in battery management systems.
6. Analog and Digital Circuits: Used in both analog and digital signal processing circuits for switching tasks.
These applications leverage the MOSFET’s efficient switching capabilities and low power loss characteristics.
1. Power Management: Used in power supply circuits for efficient switching and regulation.
2. Load Switching: Suitable for switching loads in battery-operated devices due to its low on-resistance.
3. Motor Control: Employed in driving motors in automotive and industrial applications.
4. DC-DC Converters: Utilized in step-down and step-up converters for voltage regulation.
5. Battery Protection: Helps in overcurrent and overvoltage protection in battery management systems.
6. Analog and Digital Circuits: Used in both analog and digital signal processing circuits for switching tasks.
These applications leverage the MOSFET’s efficient switching capabilities and low power loss characteristics.
Package
The package type for FQB8P10TM is TO-263 (D²PAK), which is a surface-mount package commonly used for power semiconductors like MOSFETs.
