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FQD19N10LTM
+BOMMOSFET N-CH 100V 15.6A DPAK
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メーカーオンセミコンダクター社
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メーカー品番 #FQD19N10LTM
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データシート FQD19N10LTM DataSheet
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パッケージ DPAK-3
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在庫状況6558
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 15.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 18 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 870 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概要
Description
The FQD19N10LTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It is part of the Fairchild Semiconductor's product line, which is now under ON Semiconductor. This component is typically used in applications like DC-DC converters, load switch circuits, and motor control systems due to its efficient power handling capabilities.
Key features of the FQD19N10LTM include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 19A. It provides a low on-state resistance (R_DS(on)) which ensures minimal power loss and heat generation during operation. The MOSFET comes in a DPAK (TO-252) package, which is suitable for surface mounting, enhancing its utility in space-constrained circuit designs.
The FQD19N10LTM is favored for its reliability and efficiency in high-speed switching applications, making it an essential component for power management in various electronic devices.
Key features of the FQD19N10LTM include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 19A. It provides a low on-state resistance (R_DS(on)) which ensures minimal power loss and heat generation during operation. The MOSFET comes in a DPAK (TO-252) package, which is suitable for surface mounting, enhancing its utility in space-constrained circuit designs.
The FQD19N10LTM is favored for its reliability and efficiency in high-speed switching applications, making it an essential component for power management in various electronic devices.
Equivalent
The FQD19N10LTM is an N-channel MOSFET produced by ON Semiconductor. Equivalent or similar products would include those with similar voltage and current ratings, such as the IRF540N from Infineon Technologies, the NTD4906N from ON Semiconductor, and the STP55NF06 from STMicroelectronics. Always verify the specifications, such as Vds, Id, Rds(on), and package type, to ensure compatibility for your specific application.
Features
The FQD19N10LTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications requiring efficient power management. Here are its key features:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 100V and can handle a continuous drain current (I_D) of up to 19A.
2. R_DS(on): It has a low on-resistance, typically around 130 mΩ, which ensures efficient current flow and minimizes power loss when the MOSFET is in the "on" state.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is generally around 2-4V, allowing for compatibility with standard logic levels for switching.
4. Package: This MOSFET is available in a TO-252 package, which offers a good balance between compact size and efficient heat dissipation.
5. Applications: It's suitable for applications like power supplies, motor controllers, and other systems requiring high-speed switching and efficient power conversion.
These features make the FQD19N10LTM a versatile choice for designers looking for reliability and efficiency in power management applications.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 100V and can handle a continuous drain current (I_D) of up to 19A.
2. R_DS(on): It has a low on-resistance, typically around 130 mΩ, which ensures efficient current flow and minimizes power loss when the MOSFET is in the "on" state.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is generally around 2-4V, allowing for compatibility with standard logic levels for switching.
4. Package: This MOSFET is available in a TO-252 package, which offers a good balance between compact size and efficient heat dissipation.
5. Applications: It's suitable for applications like power supplies, motor controllers, and other systems requiring high-speed switching and efficient power conversion.
These features make the FQD19N10LTM a versatile choice for designers looking for reliability and efficiency in power management applications.
Pinout
The FQD19N10LTM is a type of N-channel MOSFET. It typically comes in a TO-252 package, which generally features a 3-pin configuration. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Voltage applied here determines whether the MOSFET is on or off.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is in the 'on' state. It is the output terminal for the load current.
3. Source (S): This is the terminal through which current enters the MOSFET. It is typically connected to the ground in many applications.
The FQD19N10LTM is designed for use in power management and switching applications due to its ability to handle large amounts of current and voltage efficiently.
1. Gate (G): This pin is used to control the MOSFET. Voltage applied here determines whether the MOSFET is on or off.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is in the 'on' state. It is the output terminal for the load current.
3. Source (S): This is the terminal through which current enters the MOSFET. It is typically connected to the ground in many applications.
The FQD19N10LTM is designed for use in power management and switching applications due to its ability to handle large amounts of current and voltage efficiently.
Manufacturer
The FQD19N10LTM is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor manufacturer that focuses on designing and supplying a broad range of energy-efficient and power management solutions. They provide components for a variety of sectors including automotive, industrial, communications, computing, and consumer electronics. The company is known for its innovative solutions and commitment to sustainability and energy efficiency.
Application
The FQD19N10LTM is a N-channel MOSFET typically used in various applications due to its efficiency and reliability. Common application areas include:
1. Power Management: Used in DC-DC converters and switching regulators for efficient power conversion.
2. Motor Control: Employed in driving motors for industrial and consumer electronics.
3. Automotive Systems: Used in electronic control units and power distribution modules.
4. Telecommunications: Utilized in power amplification and signal switching.
5. Consumer Electronics: Found in power supplies and battery management systems for devices like laptops and smartphones.
Its low on-resistance and high-speed switching capabilities make it versatile for various high-efficiency applications.
1. Power Management: Used in DC-DC converters and switching regulators for efficient power conversion.
2. Motor Control: Employed in driving motors for industrial and consumer electronics.
3. Automotive Systems: Used in electronic control units and power distribution modules.
4. Telecommunications: Utilized in power amplification and signal switching.
5. Consumer Electronics: Found in power supplies and battery management systems for devices like laptops and smartphones.
Its low on-resistance and high-speed switching capabilities make it versatile for various high-efficiency applications.
Package
The FQD19N10LTM is a MOSFET with a DPAK (TO-252) package type. The DPAK is a surface-mount package commonly used for power transistors.
