画像は参考用です
FQD1N80TM
+BOMMOSFET N-CH 800V 1A DPAK
-
メーカーオンセミコンダクター社
-
メーカー品番 #FQD1N80TM
-
在庫状況4005
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | QFET® |
| Part Status | Active |
| Base Product Number | FQD1N80 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
