仕様
| 属性 | 値 |
| MinimumOperatingTemperature | - 40 C |
| MaximumOperatingTemperature | + 150 C |
| Brand | Infineon Technologies |
| ProductType | IGBT Modules |
| Subcategory | IGBTs |
| Series | Trenchstop IGBT3 - E3 |
| MountingStyle | Screw Mount |
| FactoryPackQuantity:FactoryPackQuantity | 24 |
| Technology | Si |
| Product | IGBT Silicon Modules |
| Configuration | 6-Pack |
| Collector-EmitterVoltageVCEOMax | 600 V |
| Collector-EmitterSaturationVoltage | 1.45 V |
| ContinuousCollectorCurrentat25C | 70 A |
| Gate-EmitterLeakageCurrent | 400 nA |
| Pd-PowerDissipation | 205 W |
| MaximumGateEmitterVoltage | 20 V |
| Part#Aliases | SP000092043 FS50R06W1E3BOMA1 |
| Packaging | Tray |
| Package/Case | EASY1B |
| Tradename | EasyPACK |
| UnitWeight | 24 g |
| Height | 12 mm |
| Length | 62.8 mm |
| Width | 33.8 mm |
概要
Description
The FS50R06W1E3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the Infineon CoolMOS series, known for its low on-resistance and fast switching capabilities. This component is particularly suitable for use in power supplies, motor drives, and renewable energy systems.
Key specifications include an on-resistance (RDS(on)) of 0.06 ohms, a maximum drain-source voltage (VDS) of 600V, and a continuous drain current (ID) of 50A. Its efficient thermal performance supports high-frequency operation, making it ideal for applications requiring minimal energy loss.
The FS50R06W1E3 features a TO-220 package for effective heat dissipation and ease of mounting. Overall, it offers a reliable solution for engineers looking for performance and efficiency in power electronics.
Key specifications include an on-resistance (RDS(on)) of 0.06 ohms, a maximum drain-source voltage (VDS) of 600V, and a continuous drain current (ID) of 50A. Its efficient thermal performance supports high-frequency operation, making it ideal for applications requiring minimal energy loss.
The FS50R06W1E3 features a TO-220 package for effective heat dissipation and ease of mounting. Overall, it offers a reliable solution for engineers looking for performance and efficiency in power electronics.
Equivalent
The FS50R06W1E3 chip is an IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include the Infineon FZ50R06KE3, Mitsubishi CM50DY-24H, and the ON Semiconductor MBRF750. Always verify specifications like voltage, current ratings, and switching characteristics to ensure compatibility in your application.
Features
The FS50R06W1E3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a collector-emitter voltage (Vces) of 600V.
2. Current Rating: Capable of handling a continuous collector current (Ic) of around 50A, making it suitable for medium-power applications.
3. Low Switching Loss: Optimized for efficient switching, which enhances overall system performance.
4. Thermal Performance: Designed with a low thermal resistance that allows effective heat dissipation, improving reliability and longevity.
5. Package Type: Available in a compact module format that facilitates easy integration into various power electronic systems.
6. Fast Switching: Supports high-frequency operation, suitable for applications like inverters, converters, and motor drives.
7. Robust Construction: Engineered for durability in demanding environments, ensuring stable operation under varying conditions.
Overall, the FS50R06W1E3 is a versatile component for various industrial and commercial power applications.
1. Voltage Rating: It typically has a collector-emitter voltage (Vces) of 600V.
2. Current Rating: Capable of handling a continuous collector current (Ic) of around 50A, making it suitable for medium-power applications.
3. Low Switching Loss: Optimized for efficient switching, which enhances overall system performance.
4. Thermal Performance: Designed with a low thermal resistance that allows effective heat dissipation, improving reliability and longevity.
5. Package Type: Available in a compact module format that facilitates easy integration into various power electronic systems.
6. Fast Switching: Supports high-frequency operation, suitable for applications like inverters, converters, and motor drives.
7. Robust Construction: Engineered for durability in demanding environments, ensuring stable operation under varying conditions.
Overall, the FS50R06W1E3 is a versatile component for various industrial and commercial power applications.
Pinout
The FS50R06W1E3 is an IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. It features a total of 6 pins.
The pin configuration typically includes the following functions:
1. Collector (C) - For connecting to the high voltage supply.
2. Gate (G) - For controlling the switching of the device, providing the input signal.
3. Emitter (E) - For connecting to the ground or lower potential side of the circuit.
4. Thermal Interface - Usually additional pins are used for thermal monitoring or connection to ensure adequate heat dissipation.
The FS50R06W1E3 is designed for use in various applications, including inverters, converters, and motor drive systems, ensuring efficient power handling and switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and pin assignments.
The pin configuration typically includes the following functions:
1. Collector (C) - For connecting to the high voltage supply.
2. Gate (G) - For controlling the switching of the device, providing the input signal.
3. Emitter (E) - For connecting to the ground or lower potential side of the circuit.
4. Thermal Interface - Usually additional pins are used for thermal monitoring or connection to ensure adequate heat dissipation.
The FS50R06W1E3 is designed for use in various applications, including inverters, converters, and motor drive systems, ensuring efficient power handling and switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and pin assignments.
Manufacturer
The FS50R06W1E3 is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Their products are widely used in various applications such as automotive, industrial power control, consumer electronics, and communication technologies. Infineon focuses on innovation and sustainability in its offerings, contributing to the development of energy-efficient solutions and smart technologies.
Application
The FS50R06W1E3 is an IGBT (Insulated Gate Bipolar Transistor) module typically used in various applications such as:
1. Industrial Drives: Control of electric motors in manufacturing and automation.
2. Renewable Energy: Inverters for solar power and wind turbines.
3. HVAC Systems: Variable frequency drives for heating, ventilation, and air conditioning.
4. Power Supplies: Boost and buck converters in power regulation.
5. Electric Vehicles: Inverters for propulsion systems and energy management.
Its high efficiency and thermal performance make it ideal for these sectors.
1. Industrial Drives: Control of electric motors in manufacturing and automation.
2. Renewable Energy: Inverters for solar power and wind turbines.
3. HVAC Systems: Variable frequency drives for heating, ventilation, and air conditioning.
4. Power Supplies: Boost and buck converters in power regulation.
5. Electric Vehicles: Inverters for propulsion systems and energy management.
Its high efficiency and thermal performance make it ideal for these sectors.
Package
The FS50R06W1E3 is packaged in a TO-247 package type. This package is commonly used for power semiconductor devices, providing good thermal performance and ease of mounting.
