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GS78116AB-12I
+BOMSRAM 3.3V 512K x 16 8M I Temp
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メーカーGSI技術
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メーカー品番 #GS78116AB-12I
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データシート GS78116AB-12I DataSheet
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在庫状況3182
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| StandardPackQty | 21 |
概要
Description
This SRAM module is typically used in cache memory systems, data buffering, and other applications where rapid data retrieval and storage are needed. Its static design means it retains data integrity without the need for periodic refreshing, unlike dynamic RAM. The GS78116AB-12I is housed in a compact package, making it suitable for space-constrained applications. It features a standard voltage range, typically around 3.3V or 5V, ensuring compatibility with a wide array of digital systems.
Equivalent
Features
1. Memory Size: It typically offers a configuration of 128K x 8 bits, providing a total of 1 Megabit of storage capacity.
2. Speed: It operates with a fast access time of 12 nanoseconds, making it suitable for high-speed applications.
3. Voltage: The device functions with a supply voltage of 5V, ensuring compatibility with standard voltage levels used in many electronic circuits.
4. Temperature Range: The "-12I" designation indicates it is designed for industrial temperature ranges, usually from -40°C to +85°C, making it suitable for harsh environments.
5. Package: It is available in a standard 32-pin DIP or a compact surface-mount package, facilitating easy integration into various designs.
6. Low Power Consumption: The SRAM features low power standby modes, minimizing energy usage when the device is not actively being accessed.
These attributes make the GS78116AB-12I ideal for use in applications requiring reliable and fast memory access, such as in embedded systems, telecommunications, and computing devices.
Pinout
The 44 pins are used for various functions including:
- 16 data input/output pins (I/O0 to I/O15)
- 20 address pins (A0 to A19) for selecting memory locations
- Power supply pins: VCC and VSS (ground)
- Control pins: Chip Enable (CE), Write Enable (WE), Output Enable (OE), and Byte Control (LB for lower byte, UB for upper byte)
CE is used to enable the chip, WE is used to control the write operations, and OE is used to enable the output buffer. LB and UB allow for byte-level access to the memory, which can be useful in certain applications.
Overall, the GS78116AB-12I provides reliable and fast memory access tailored for demanding applications.