画像は参考用です
GT095N10S
+BOMN100V, 21A,RD<9.5M@10V,VTH1.2V~2
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メーカーGoford半導体
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メーカー品番 #GT095N10S
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在庫状況5642
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 21A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 9.5mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.6V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 29.4 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2131 pF @ 50 V |
| Power Dissipation (Max) | 8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP |
