H5TC4G63EFR-RDA

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H5TC4G63EFR-RDA

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4Gbit 1.283V~1.45V 800MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Packaging FBGA-96
Clock Frequency 800MHz
Supply Current 38mA
Memory Format DDR3L SDRAM
Memory Size 4Gbit
Operating Temperature -40℃~+105℃
Refresh Current 12mA
Voltage - Supply 1.283V~1.45V

概要

Description

The H5TC4G63EFR-RDA is a 4Gb (512Mx8) DDR3L SDRAM chip from SK Hynix, designed for low-power applications.
Key Features:
- DDR3L Standard: Operates at 1.35V (supports 1.283V–1.45V).
- Speed: 800–1600 Mbps (PC3L-6400 to PC3L-12800).
- Density: 4Gb (512M x 8) organization.
- Package: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Refresh: 8192-cycle/64ms.
- On-Die Termination (ODT): Improves signal integrity.
Applications:
- Low-power computing (laptops, tablets).
- Embedded systems, networking devices.
Advantages:
- Lower power consumption vs. standard DDR3.
- High-speed performance with efficient thermal design.
For detailed specs, refer to the SK Hynix datasheet.

Equivalent

Equivalent products to the H5TC4G63EFR-RDA (4Gb DDR3L SDRAM) include:
- MT41K256M16TW-107:P (Micron)
- K4B4G1646E-BCMA (Samsung)
- IS43TR16256B-125KBL (ISSI)
These are 4Gb DDR3L chips with similar specs (speed, density, voltage). Verify pinout and timing for compatibility.

Features

The H5TC4G63EFR-RDA is a 4Gb (512M x 8) DDR3L SDRAM chip with the following key features:
- Density & Organization: 4Gb (512M x 8)
- Voltage: Low-power 1.35V (DDR3L), compatible with 1.5V
- Speed: 1866 Mbps data rate (DDR3L-1866)
- Timings: CL=13, tRCD=13, tRP=13
- Package: 96-ball FBGA (8mm x 14mm)
- Refresh: 8192 cycles/64ms
- Operating Temp: 0°C to 95°C (Commercial)
- Features: On-die termination (ODT), auto & self-refresh
Designed for low-power, high-performance applications like mobile, networking, and embedded systems.

Pinout

The H5TC4G63EFR-RDA is a 4Gb (512Mx8) DDR3L SDRAM chip from SK Hynix.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Low-voltage operation (1.35V, compatible with 1.5V DDR3).
- 8-bit prefetch architecture.
- Double data rate (DDR) interface.
- On-die termination (ODT) for signal integrity.
- Auto-refresh & self-refresh modes.
- CAS latency (CL) support for high-speed operation (e.g., CL=11).
Common applications include mobile devices, networking, and embedded systems.

Package

The H5TC4G63EFR-RDA is a 4Gb DDR3L SDRAM chip from SK Hynix. It comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, measuring 9mm x 9mm x 1.0mm. This compact, surface-mount package is designed for high-speed, low-power applications, commonly used in mobile devices and embedded systems. The "RDA" suffix indicates its industrial-grade temperature range (-40°C to +95°C).

Frequently Asked Questions


Q: Is this a standard DDR3 or DDR3L memory component?
A: It is a DDR3L SDRAM, operating at 1.283V~1.45V, making it compatible with low-voltage applications for reduced power consumption.


Q: What is the maximum operating temperature for the H5TC4G63EFR-RDA?
A: The device supports an industrial temperature range from -40°C to +105°C, suitable for harsh environment applications.


Q: What is the memory density and organization of this component?
A: It has a 4Gbit memory size, typically organized as 512M x 8 or 256M x 16, suitable for high-density memory requirements.


Q: What package type does this part use?
A: It comes in a FBGA-96 package, which is the standard fine-pitch ball grid array for DDR3L SDRAM modules.


Q: How much current does this memory draw during operation?
A: The typical supply current is 38mA, with a refresh current of 12mA, ensuring efficient power management in system designs.


Q: What is the maximum clock frequency supported?
A: It supports a clock frequency of 800MHz, corresponding to DDR3L-1600 data rate for high-speed data transfer.


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