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HCNW3120
+BOMOPTOISO 5KV 1CH GATE DVR 8DIP
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メーカーブロードコム株式会社
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メーカー品番 #HCNW3120
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在庫状況10680
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Technology | Optical Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 5000Vrms |
| Common Mode Transient Immunity (Min) | 25kV/µs |
| Propagation Delay tpLH / tpHL (Max) | 500ns, 500ns |
| Pulse Width Distortion (Max) | 300ns |
| Rise / Fall Time (Typ) | 100ns, 100ns |
| Current - Output High, Low | 2A, 2A |
| Current - Peak Output | 2.5A |
| Voltage - Forward (Vf) (Typ) | 1.6V |
| Voltage - Output Supply | 15V ~ 30V |
| Operating Temperature | -40°C ~ 100°C |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.400", 10.16mm) |
| Supplier Device Package | 8-DIP |
| Approval Agency | CSA, IEC/EN/DIN, UR |
| Base Product Number | HCNW3120 |
| Current - DC Forward (If) (Max) | 25 mA |
概要
Description
If HCNW3120 pertains to a course, it might cover advanced topics suitable for undergraduate or graduate students, depending on the institution's coding system. To gain a comprehensive understanding, you would need to consult the course catalog or syllabus offered by the particular educational institution. This would provide insights into the course objectives, prerequisites, curriculum, and any specific focus areas.
For more precise information, consider reaching out to the academic department or checking the institution’s official website where course offerings are listed.
Equivalent
1. Avago Technologies ACPL-3120
2. Broadcom ACNW3190
3. Vishay VO3120
4. Lite-On LTV-3120
These components share similar functionality, such as providing electrical isolation and gate drive capability for power transistors like IGBTs and MOSFETs. Always verify specifications and pin compatibility before substitution.
Features
1. Isolation: Provides a high level of electrical isolation between input and output with a typical isolation voltage of 5,000 VRMS.
2. High-Speed Performance: Features fast switching speeds with a typical propagation delay of 500 ns, making it suitable for high-frequency applications.
3. High Output Current: Capable of sourcing or sinking up to 2.5 A of peak output current, allowing it to drive larger power devices.
4. Wide Operating Temperature Range: Can operate reliably in temperatures from -40°C to +100°C.
5. Under-Voltage Lockout (UVLO): Includes UVLO protection to prevent the gate from being driven when the supply voltage is too low, ensuring the device operates safely.
6. Compact Package: Available in a compact 8-pin DIP package, making it suitable for space-constrained applications.
7. CMR Performance: Exhibits good common-mode transient immunity, which helps maintain signal integrity in noisy environments.
These features make the HCNW3120 an ideal choice for applications requiring efficient and reliable gate driving capabilities.
Pinout
1. Pin 1 (ANODE): Connected to the internal LED anode.
2. Pin 2 (CATHODE): Connected to the internal LED cathode.
3. Pin 3 (NC): No connection; often used for spacing.
4. Pin 4 (NC): No connection; often used for spacing.
5. Pin 5 (GND): Ground reference for the output side.
6. Pin 6 (VOUT): The output pin that drives the gate of the MOSFET or IGBT.
7. Pin 7 (VCC): Positive supply voltage for the output side.
8. Pin 8 (NC): No connection; often used for spacing.
The HCNW3120 provides electrical insulation between the input and output, ensuring safety and signal integrity in high-voltage applications.
Manufacturer
Application
1. Industrial Motor Drives: Provides isolation and gate drive for efficient motor control.
2. Power Inverters: Used in renewable energy systems like solar and wind to convert DC to AC.
3. Switch Mode Power Supplies (SMPS): Offers isolation and precise control in power supply units.
4. Uninterruptible Power Supplies (UPS): Ensures stable power conversion and isolation.
5. Electric Vehicle Charging Stations: Facilitates efficient power management and safety isolation.
6. Industrial Automation: Supports isolated signal transmission in automation systems.
These applications benefit from its high isolation voltage, fast switching speeds, and robust performance.