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HMC5805ALS6
+BOMIC RF AMP VSAT 0HZ-40GHZ 16CSMT
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メーカーテキサス・インスツルメンツ
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メーカー品番 #HMC5805ALS6
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データシート HMC5805ALS6 DataSheet
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パッケージ 16-CLCC Exposed Pad
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在庫状況249
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Analog Devices Inc. |
| Package | Strip |
| ProductStatus | Active |
| Frequency | 0Hz ~ 40GHz |
| P1dB | 22dBm |
| Gain | 13.5dB |
| NoiseFigure | 7dB |
| RFType | VSAT |
| Voltage-Supply | 10V |
| Current-Supply | 175mA |
| MountingType | Surface Mount |
| Package/Case | 16-CLCC Exposed Pad |
概要
Description
Key features of the HMC5805ALS6 include a high gain of typically 21 dB and an output power of up to 34 dBm, ensuring robust signal amplification. It also boasts a high power-added efficiency (PAE) of approximately 33%, optimizing energy usage while maintaining performance. The amplifier comes in a compact 6 x 6 mm leadless surface-mount LFCSP package, facilitating ease of integration into densely packed circuit boards.
The device is designed to operate with a bias voltage of 5 V, ensuring compatibility with standard power supplies. Its rugged construction and reliable performance across a wide temperature range make it an excellent choice for demanding RF environments. The HMC5805ALS6 provides a balance of power, efficiency, and size, meeting the needs of modern RF applications.
Equivalent
Features
1. Frequency Range: Operates between 5 GHz and 18 GHz, making it suitable for a variety of microwave applications.
2. Output Power: Delivers a typical output power of 28 dBm at 1 dB compression point, providing substantial amplification.
3. Gain: Offers a typical small signal gain of 18 dB, enhancing signal strength.
4. High Linearity: Exhibits an output third-order intercept point (OIP3) of 40 dBm, ensuring signal integrity with minimal distortion.
5. Efficiency: Features a power-added efficiency (PAE) of up to 23%, optimizing energy use.
6. Integrated Power Detector: Comes with an on-chip power detector for output power monitoring.
7. Package: Available in a compact 6 x 6 mm leadless ceramic surface-mount package, facilitating easy integration into designs.
8. Applications: Ideal for point-to-point radios, military, and satellite communications due to its wide frequency range and robust performance.
These features make the HMC5805ALS6 a versatile component for amplifying RF signals in demanding environments.
Pinout
The amplifier operates in the frequency range of 5.5 to 9.5 GHz and offers a high gain of around 23 dB with a typical output power of 32 dBm at P1dB. It also features a high power-added efficiency (PAE) of around 27%. The HMC5805ALS6 is designed for ease of use, requiring minimal external components for operation, which simplifies its integration into RF systems.
For detailed pin configuration and specific functions of each pin, it is recommended to consult the manufacturer's datasheet. The datasheet will provide comprehensive information about the pin layout, electrical characteristics, and application guidance.
Manufacturer
Application
1. Telecommunications: Used in wireless infrastructure for cellular base stations, supporting LTE, 4G, and 5G technologies.
2. Military and Defense: Suitable for radar and electronic warfare systems due to its robust performance.
3. Test and Measurement Equipment: Integrated into systems requiring precise signal amplification over a broad frequency range.
4. Satellite Communications: Used in transceivers for uplink and downlink signal amplification.
5. Microwave Radio: Employed in point-to-point and point-to-multipoint radio communications.
These applications leverage the amplifier's efficiency, gain, and linearity.