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HMC632LP5E
+BOMIC MMIC VCO HBT BIPOLAR 32-QFN
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メーカーテキサス・インスツルメンツ
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メーカー品番 #HMC632LP5E
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データシート HMC632LP5E DataSheet
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在庫状況38
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Function | VCO |
| Frequency | 14.25GHz ~ 15.65GHz |
| RF Type | General Purpose |
| Secondary Attributes | Triple Outputs (Divide by 2, Divide by 4, Standard) |
| Mounting Type | Surface Mount |
| Package / Case | 32-VFQFN Exposed Pad |
| Supplier Device Package | 32-QFN (5x5) |
| Base Product Number | HMC632 |
概要
Description
With a compact package (5mm x 5mm), the HMC632LP5E is ideal for space-constrained designs. It provides a typical gain of around 20 dB and has a robust output power capability, allowing it to drive various RF components effectively. The device is compatible with typical RF circuit design practices, facilitating easy integration into existing systems.
Key specifications include low power consumption, wide operating voltage range, and excellent thermal performance. Overall, the HMC632LP5E is a versatile choice for engineers looking to enhance signal amplification in advanced RF applications.
Equivalent
Features
1. Frequency Range: Operates from 1.5 to 6.0 GHz, making it suitable for various communication systems.
2. Gain: Provides a high gain of approximately 24 dB at 2.0 GHz.
3. Noise Figure: Offers a low noise figure around 2.5 dB, enhancing signal clarity.
4. Output Power: Delivers up to +20 dBm of output power, supporting high-power applications.
5. Power Supply: Operates from a single supply voltage of +5V.
6. Package: Available in a compact 5x5 mm LFCSP package, facilitating easy integration into circuits.
7. Impedance: Characterized for 50-ohm systems, streamlining design processes.
8. Applications: Ideal for use in point-to-point and point-to-multipoint communications, as well as in radar systems.
These features make the HMC632LP5E a robust choice for RF amplification in various high-frequency applications.
Pinout
1. Pin 1 (RF IN): Input for the RF signal to be amplified.
2. Pin 2 (RF OUT): Output for the amplified RF signal.
3. Pin 3 (GND): Ground connection for the circuit.
4. Pin 4 (VDD): Positive supply voltage for the amplifier.
5. Pin 5 (VGG): Gate voltage for biasing the transistor.
Overall, the HMC632LP5E provides low noise figure and high gain, making it suitable for applications in communications systems and other RF designs.
Manufacturer
Founded in 1965, Analog Devices is recognized for its innovation in analog and mixed-signal technologies, offering solutions that enable precise signal processing and data conversion. The HMC632LP5E is a part of their high-frequency RF and microwave product line, designed for applications such as data communications and instrumentation.
Overall, Analog Devices is known for its commitment to quality and performance, positioning itself as a key player in the semiconductor industry with a focus on advancing electronic technology.