HMC952ALP5GE

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HMC952ALP5GE

+BOM

IC RF AMP 9GHZ-14GHZ 24QFN

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  • メーカー品番 #HMC952ALP5GE

  • データシート HMC952ALP5GE DataSheet

  • パッケージ VQFN-24

  • 在庫状況4211

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仕様

属性 値
Package / Case Strip
Part Status Active
Frequency 9GHz ~ 14GHz
P1d B 34dBm
Gain 33dB
Voltage - Supply 6V
Supply Current 1.4A
Test Frequency 10GHz ~ 14GHz
Mounting Type Surface Mount

概要

Description

The HMC952ALP5GE is a high-performance, gallium arsenide (GaAs) pHEMT MMIC (Monolithic Microwave Integrated Circuit) power amplifier. Designed for use in RF and microwave applications, it operates within the frequency range of 0.01 to 2.5 GHz. The amplifier delivers high gain, typically around 19 dB, and high output power, making it suitable for applications requiring efficient signal amplification.
Key features of the HMC952ALP5GE include a high power added efficiency (PAE) and a consistent output power level across its operating frequency range. It is packaged in a 5x5 mm leadless lead frame package (LP5) that enhances heat dissipation and reliability. The device is equipped with on-chip matching circuitry, which simplifies integration into RF systems and reduces the need for external components.
Applications for the HMC952ALP5GE include wireless infrastructure, test equipment, and military communications. Its robust performance makes it an ideal choice for designers seeking a compact, efficient solution for medium power amplification in a wide range of RF applications.

Equivalent

The HMC952ALP5GE is a GaAs MMIC Power Amplifier. Equivalent products could include:
1. Analog Devices HMC994APM5E
2. Qorvo TGA2216-SM
3. Mini-Circuits ZHL-30W-252+
4. MACOM MAAM-011238
These alternatives may vary in specifications, so it's essential to compare parameters like frequency range, gain, power output, and noise figure to ensure compatibility with your application. Always verify with the latest datasheets from manufacturers.

Features

The HMC952ALP5GE is a versatile GaAs MMIC power amplifier designed for high-frequency applications. Key features include:
1. Frequency Range: Operates from 0.01 to 4 GHz, making it suitable for a wide array of RF applications.
2. Gain: Provides a gain of 18 dB, enhancing signal strength in communication systems.
3. Output Power: Delivers a saturated output power of up to 35 dBm, supporting high-power applications.
4. Efficiency: Exhibits a power-added efficiency (PAE) of approximately 44%, optimizing power consumption.
5. Design: Packaged in a 5x5 mm SMT package, facilitating easy integration into compact circuit designs.
6. Thermal Management: Built with a robust design for effective heat dissipation, ensuring stable performance.
7. Harmonic Performance: Features excellent harmonic suppression, improving signal integrity.
8. Bias Control: Offers bias control options, allowing for optimization of performance parameters.
9. Applications: Ideal for use in cellular infrastructure, military, and test equipment, among other RF applications.
These features make the HMC952ALP5GE a strong candidate for high-performance amplification needs in various RF environments.

Pinout

The HMC952ALP5GE is a GaAs MMIC pHEMT Distributed Power Amplifier, and it is typically housed in a 32-lead leadless plastic package. The main function of this amplifier is to provide high gain and output power from DC to 28 GHz, making it suitable for a wide range of applications including military, space, and industrial microwave communications systems.
Here is a concise description of its pin functions:
1. RF Input: The input pin for RF signals.
2. RF Output/Vdd: The output pin for RF signals also serves as a drain voltage supply pin.
3. Vgg1/Vgg2: Gate voltage control pins for setting the bias of the amplifier.
4. GND: Ground pins for electrical grounding.
5. N/C (No Connect): Pins not internally connected, used for mechanical support or thermal relief.
For exact pin assignments and additional details, the manufacturer's datasheet should be referred to, as it provides comprehensive information on pin configuration and operational guidelines.

Manufacturer

The HMC952ALP5GE is manufactured by Analog Devices, Inc. (ADI). Analog Devices is a multinational semiconductor company that specializes in the design and manufacturing of analog, mixed-signal, and digital signal processing (DSP) integrated circuits. These products are used in a broad range of electronic equipment, including data converters, amplifiers, RF and microwave devices, power management products, and sensors. ADI's solutions serve various markets such as industrial, automotive, communication, healthcare, and consumer electronics. Recognized for its innovation and technology leadership, Analog Devices is committed to solving some of the world's toughest engineering challenges.

Application

The HMC952ALP5GE is a GaAs MMIC power amplifier. It is commonly used in applications such as wireless infrastructure, point-to-point and point-to-multipoint radios, and military and space systems. It is designed for applications in the frequency range of 0.01 to 4 GHz, making it suitable for use in broadband communications systems. The amplifier is also utilized in test and measurement equipment, and within the defense sector for radar and electronic warfare systems due to its high power output and efficiency. Its design supports reliable performance in demanding environments, contributing to its versatility across various high-frequency applications.

Package

The HMC952ALP5GE is housed in a RoHS-compliant, leadless QFN surface-mount package.

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