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IKD10N60RATMA1
+BOMIGBT TRENCH FS 600V 20A TO252-3
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IKD10N60RATMA1
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在庫状況3876
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | TRENCHSTOP™ |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 20 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Power - Max | 150 W |
| Switching Energy | 210µJ (on), 380µJ (off) |
| Input Type | Standard |
| Gate Charge | 64 nC |
| Td (on / off) @ 25°C | 14ns/192ns |
| Test Condition | 400V, 10A, 23Ohm, 15V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| Base Product Number | IKD10N |
| Current - Collector Pulsed (Icm) | 30 A |
概要
Description
The IKD10N60RATMA1 is a high-voltage N-channel MOSFET produced by Infineon Technologies. It is designed for power applications, offering a voltage rating of 600 volts and a continuous current rating of up to 10 amps. This device features a low on-resistance, which enhances its efficiency and thermal performance in various applications, including power supplies, converters, and motor drives.
The MOSFET is part of Infineon's CoolMOS™ series, known for its superior efficiency, fast switching capabilities, and reliability. It also supports high-frequency operation, making it suitable for modern switching power supplies. The IKD10N60RATMA1 is housed in a TO-220 package, providing easy mounting and heat dissipation.
Key specifications include a maximum gate-source voltage of ±20V, a maximum storage and operating temperature range of -55°C to +150°C, and a low total gate charge, contributing to its fast switching performance. Overall, it’s a reliable choice for designers looking to optimize power efficiency in their electronic circuits.
The MOSFET is part of Infineon's CoolMOS™ series, known for its superior efficiency, fast switching capabilities, and reliability. It also supports high-frequency operation, making it suitable for modern switching power supplies. The IKD10N60RATMA1 is housed in a TO-220 package, providing easy mounting and heat dissipation.
Key specifications include a maximum gate-source voltage of ±20V, a maximum storage and operating temperature range of -55°C to +150°C, and a low total gate charge, contributing to its fast switching performance. Overall, it’s a reliable choice for designers looking to optimize power efficiency in their electronic circuits.
Equivalent
The IKD10N60RATMA1 is a 600V, 10A N-channel MOSFET. Equivalent products include the IRF840, STP10NK60Z, and MTP10N60E. For similar specifications, consider the FQP10N60L and BUK9YB60-100. Always verify specific parameters like Rds(on), gate threshold voltage, and package type before substitution.
Features
The IKD10N60RATMA1 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The device can handle a continuous drain current (ID) of up to 10A.
3. RDS(on): It offers a low on-resistance, typically around 0.8 ohms, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (VGS(th)) is typically between 2-4V, enabling it to be driven directly with low gate voltages.
5. Package: It is housed in a TO-220 package, providing effective thermal dissipation.
6. Fast Switching: The MOSFET features good switching characteristics, making it suitable for applications in power supplies, inverters, and motor drivers.
These attributes make the IKD10N60RATMA1 suitable for various high-power and high-efficiency electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The device can handle a continuous drain current (ID) of up to 10A.
3. RDS(on): It offers a low on-resistance, typically around 0.8 ohms, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (VGS(th)) is typically between 2-4V, enabling it to be driven directly with low gate voltages.
5. Package: It is housed in a TO-220 package, providing effective thermal dissipation.
6. Fast Switching: The MOSFET features good switching characteristics, making it suitable for applications in power supplies, inverters, and motor drivers.
These attributes make the IKD10N60RATMA1 suitable for various high-power and high-efficiency electronic applications.
Pinout
The IKD10N60RATMA1 is a N-channel MOSFET designed for power applications. It features a TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G) - This pin is used for controlling the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - The pin where the load is connected; it is the terminal that conducts the main current when the MOSFET is turned on.
3. Source (S) - The pin that is connected to the ground or the low side of the circuit.
The IKD10N60RATMA1 is rated for 600V and 10A, making it suitable for applications such as power supplies, motor drives, and switching applications.
1. Gate (G) - This pin is used for controlling the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - The pin where the load is connected; it is the terminal that conducts the main current when the MOSFET is turned on.
3. Source (S) - The pin that is connected to the ground or the low side of the circuit.
The IKD10N60RATMA1 is rated for 600V and 10A, making it suitable for applications such as power supplies, motor drives, and switching applications.
Manufacturer
The IKD10N60RATMA1 is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in providing a wide range of products, including power semiconductors, microcontrollers, and sensors. The company is particularly known for its innovations in power management and energy efficiency, serving various sectors such as automotive, industrial, and consumer electronics. Infineon's products are essential for applications requiring high performance and reliability, such as electric vehicles, renewable energy systems, and smart grid technologies. With a strong focus on research and development, Infineon continues to drive advancements in semiconductor technology, making it a key player in the electronics industry.
Application
The IKD10N60RATMA1 is an N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: For efficient power management and voltage regulation.
2. Motor Drives: Inverters for controlling electric motors in industrial and consumer applications.
3. High-Efficiency Lighting: Used in LED drivers for energy-efficient lighting solutions.
4. DC-DC Converters: In applications like battery management and renewable energy systems.
5. Telecommunications Equipment: For power amplifiers and signal processing.
Overall, it excels in applications requiring high voltage, high efficiency, and fast switching capabilities.
1. Switching Power Supplies: For efficient power management and voltage regulation.
2. Motor Drives: Inverters for controlling electric motors in industrial and consumer applications.
3. High-Efficiency Lighting: Used in LED drivers for energy-efficient lighting solutions.
4. DC-DC Converters: In applications like battery management and renewable energy systems.
5. Telecommunications Equipment: For power amplifiers and signal processing.
Overall, it excels in applications requiring high voltage, high efficiency, and fast switching capabilities.
Package
The IKD10N60RATMA1 is packaged in a TO-220 package type. This package is commonly used for power semiconductors, providing good thermal performance and ease of mounting on heatsinks.
