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IKW30N60T
+BOMIKW30N60 - DISCRETE IGBT WITH AN
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IKW30N60T
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データシート IKW30N60T DataSheet
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パッケージ TO-247-3
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在庫状況2445
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Bulk |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 45 A |
| Current-CollectorPulsed(Icm) | 90 A |
| Vce(on)(Max)@VgeIc | 2.05V @ 15V, 30A |
| Power-Max | 187 W |
| SwitchingEnergy | 690µJ (on), 770µJ (off) |
| InputType | Standard |
| GateCharge | 167 nC |
| Td(on/off)@25°C | 23ns/254ns |
| TestCondition | 400V, 30A, 10.6Ohm, 15V |
| ReverseRecoveryTime(trr) | 143 ns |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
概要
Description
The IKW30N60T is an Insulated Gate Bipolar Transistor (IGBT), designed for high-efficiency power switching applications. It is commonly used in applications such as motor drives, inverters, and power supply systems. This device is engineered to operate at high voltages, specifically up to 600V, while providing a current capacity of 30A. The IKW30N60T features a low saturation voltage, which contributes to reduced conduction losses, enhancing its overall efficiency.
The transistor is housed in a TO-247 package, facilitating efficient heat dissipation, which is essential for maintaining performance and reliability under high-stress scenarios. Key characteristics include a fast switching speed and robust short-circuit withstand capability, making it suitable for a range of demanding applications. Additionally, it offers a low gate charge, which helps in reducing the gate drive losses and helps in achieving high-frequency operation.
Overall, the IKW30N60T is valued for its balance of performance, efficiency, and reliability, making it a popular choice in modern power electronics.
The transistor is housed in a TO-247 package, facilitating efficient heat dissipation, which is essential for maintaining performance and reliability under high-stress scenarios. Key characteristics include a fast switching speed and robust short-circuit withstand capability, making it suitable for a range of demanding applications. Additionally, it offers a low gate charge, which helps in reducing the gate drive losses and helps in achieving high-frequency operation.
Overall, the IKW30N60T is valued for its balance of performance, efficiency, and reliability, making it a popular choice in modern power electronics.
Equivalent
The IKW30N60T is an IGBT (Insulated Gate Bipolar Transistor) commonly used in power electronics applications. Equivalent products would include devices with similar voltage and current ratings. Some potential equivalents are:
1. STGW30NC60WD - STMicroelectronics
2. FGA30N60UFD - ON Semiconductor
3. GT30J341 - Toshiba
4. IRG4BC30KD - Infineon Technologies
It’s important to check the datasheets to ensure exact compatibility regarding switching speeds, thermal characteristics, and packaging.
1. STGW30NC60WD - STMicroelectronics
2. FGA30N60UFD - ON Semiconductor
3. GT30J341 - Toshiba
4. IRG4BC30KD - Infineon Technologies
It’s important to check the datasheets to ensure exact compatibility regarding switching speeds, thermal characteristics, and packaging.
Features
The IKW30N60T is an IGBT (Insulated Gate Bipolar Transistor) known for its efficiency and high-speed switching capabilities. Key features include:
1. Voltage Rating: It has a collector-emitter voltage rating of 600V, suitable for medium power applications.
2. Current Rating: The device supports a continuous collector current of up to 30A, making it suitable for various power electronics applications.
3. Low Saturation Voltage: The IGBT exhibits low V_CE(sat), which minimizes conduction losses and enhances efficiency.
4. High-Speed Switching: Designed for fast switching, it reduces switching losses, which is crucial for applications requiring high frequency.
5. Rugged Design: Designed to withstand harsh operating conditions, this IGBT offers strong durability and reliability.
6. Thermal Performance: It features good thermal performance, supported by its TO-247 package, which aids in efficient heat dissipation.
7. Applications: Commonly used in inverters, motor drives, and power supply systems.
These features make the IKW30N60T suitable for various demanding applications in industrial and consumer electronics.
1. Voltage Rating: It has a collector-emitter voltage rating of 600V, suitable for medium power applications.
2. Current Rating: The device supports a continuous collector current of up to 30A, making it suitable for various power electronics applications.
3. Low Saturation Voltage: The IGBT exhibits low V_CE(sat), which minimizes conduction losses and enhances efficiency.
4. High-Speed Switching: Designed for fast switching, it reduces switching losses, which is crucial for applications requiring high frequency.
5. Rugged Design: Designed to withstand harsh operating conditions, this IGBT offers strong durability and reliability.
6. Thermal Performance: It features good thermal performance, supported by its TO-247 package, which aids in efficient heat dissipation.
7. Applications: Commonly used in inverters, motor drives, and power supply systems.
These features make the IKW30N60T suitable for various demanding applications in industrial and consumer electronics.
Pinout
The IKW30N60T is an IGBT (Insulated Gate Bipolar Transistor) used for power switching applications. It typically comes in a TO-247 package. The pin count of the IKW30N60T is 3, which is standard for this type of component. These pins are designated as:
1. Gate: This is the control terminal. A voltage applied to the gate controls the flow of current between the collector and emitter.
2. Collector: This is the output terminal through which the main current flows when the IGBT is in the ON state.
3. Emitter: This is the terminal that is connected to the load circuit, typically connected to ground or return.
The IKW30N60T is designed to handle high voltages and currents, making it suitable for applications such as motor drives, inverters, and power supplies. It combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
1. Gate: This is the control terminal. A voltage applied to the gate controls the flow of current between the collector and emitter.
2. Collector: This is the output terminal through which the main current flows when the IGBT is in the ON state.
3. Emitter: This is the terminal that is connected to the load circuit, typically connected to ground or return.
The IKW30N60T is designed to handle high voltages and currents, making it suitable for applications such as motor drives, inverters, and power supplies. It combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
Manufacturer
The IKW30N60T is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon is known for producing a wide range of semiconductor solutions, including microcontrollers, power semiconductors, and sensors, which are utilized in automotive, industrial, and consumer electronics applications. The company is recognized for its focus on energy efficiency, mobility, and security, and it plays a significant role in the global semiconductor industry.
Application
The IKW30N60T is a high-speed IGBT (Insulated Gate Bipolar Transistor) commonly used in various power electronic applications. Its application areas include:
1. Inverters: Used in solar inverters and motor drive inverters due to its efficiency and fast switching capabilities.
2. Uninterruptible Power Supplies (UPS): Essential for efficient energy conversion and management.
3. Motor Drives: Provides reliable performance in industrial motor control applications.
4. Welders: Utilized in welding equipment for effective power handling.
5. Power Factor Correction (PFC) Circuits: Helps in improving power efficiency and reducing energy losses.
These application areas leverage the IGBT's ability to handle high voltages and currents while ensuring efficient operation.
1. Inverters: Used in solar inverters and motor drive inverters due to its efficiency and fast switching capabilities.
2. Uninterruptible Power Supplies (UPS): Essential for efficient energy conversion and management.
3. Motor Drives: Provides reliable performance in industrial motor control applications.
4. Welders: Utilized in welding equipment for effective power handling.
5. Power Factor Correction (PFC) Circuits: Helps in improving power efficiency and reducing energy losses.
These application areas leverage the IGBT's ability to handle high voltages and currents while ensuring efficient operation.
Package
The IKW30N60T is an IGBT (Insulated Gate Bipolar Transistor) and typically comes in a TO-247 package. This package type is designed for high-power applications, providing efficient thermal performance and ease of mounting.
