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IPA60R299CP
+BOM-
メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPA60R299CP
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在庫状況8310
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS CE |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | IPA6R299CPXK SP000096438 IPA60R299CPXKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220FP-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 11 A |
| Rds On | 270 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 29 nC |
| Pd - Power Dissipation | 33 W |
| Channel Mode | Enhancement |
| Fall Time | 5 ns |
| Rise Time | 5 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 40 ns |
| Typical Turn - On Delay Time | 10 ns |
概要
Description
Key features include a low on-resistance (RDS(on)), which enhances efficiency, especially in high-current applications. The device typically supports a maximum drain-source voltage of 60V and can handle significant continuous current, making it suitable for power supply circuits, motor drives, and other demanding power conversion tasks.
The "CP" in the model number indicates specific packaging and thermal performance characteristics suited for compact designs. With a robust thermal management capability, it can operate effectively in high-temperature environments.
Overall, the IPA60R299CP provides designers with a reliable and efficient option for modern electronic applications, balancing performance and thermal efficiency in a compact package.
Equivalent
Features
1. Voltage Rating: It typically supports a high breakdown voltage, making it suitable for demanding environments.
2. Low On-Resistance: This MOSFET has a low R_DS(on), which helps in reducing conduction losses and improving efficiency.
3. Fast Switching Speed: It is designed for quick switching applications, making it ideal for use in power supplies and converters.
4. Thermal Performance: Good thermal characteristics enable effective heat dissipation, prolonging device life.
5. Package Type: Usually available in compact packages that facilitate easy integration into circuits.
6. High Current Capability: It supports high current ratings, making it versatile for various power applications.
7. Gate Threshold Voltage: The device features a suitable gate threshold voltage for compatibility with standard driving circuits.
These characteristics make the IPA60R299CP a valuable component in power electronics, automotive, and industrial applications.
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - The output terminal that connects to the load.
3. Emitter (E) - The terminal connected to the ground or negative side of the circuit.
4. Collector (C) - Second collector pin for enhanced current handling.
5. Emitter (E) - Second emitter pin for improved thermal performance.
6. Isolated terminal for thermal sensing or connection.
This IGBT is rated for a voltage of 600V and a current of 299A, suitable for high-power applications.
Manufacturer
Application
1. Industrial Drives: Motor control and variable frequency drives (VFDs) for electric motors.
2. Renewable Energy: Inverters for solar and wind energy systems.
3. Power Supplies: High-efficiency switch-mode power supplies (SMPS).
4. Rail Transportation: Traction systems in electric trains and trams.
5. Electric Vehicles: Power conversion systems and motor drives.
6. HVAC Systems: Variable speed drives for heating, ventilation, and air conditioning systems.
Its high current capacity and efficiency make it suitable for demanding applications.