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IPB014N06N
+BOMMOSFETs N-Ch 60V 180A D2PAK-6
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPB014N06N
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データシート IPB014N06N DataSheet
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在庫状況26973
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概要
Description
For instance, "IPB" could denote the institution or department offering the course, while "014N06N" might indicate the specific course number, module, or version. In courses, such codes help in cataloging and identifying curricular offerings.
To gain a better understanding, one would need to refer to specific resources provided by the institution or organization associated with the code. This might include a syllabus, course catalog, or official documentation that outlines the objectives, content, and structure of IPB014N06N. If this code pertains to another area, such as a product or dataset, similar steps would apply: consulting relevant manuals, data sheets, or official sources for detailed information.
Equivalent
1. IRLB3034PBF from Infineon.
2. FDP039AN06A0 from ON Semiconductor.
3. AON6500 from Alpha & Omega Semiconductor.
Always verify the specifications with the manufacturer’s datasheets to ensure compatibility for your specific application.
Features
1. Type: N-channel MOSFET, suitable for use in power management applications.
2. Voltage Rating: It has a drain-source voltage (V_ds) of 60V, making it suitable for medium voltage applications.
3. Current Rating: The continuous drain current (I_d) can go up to 180A, allowing for high current handling.
4. On-State Resistance: It features a low on-state resistance (R_ds(on)) of about 1.4 mΩ, reducing power loss and improving efficiency.
5. Package: Available in a TO-220 package, which is widely used for its heat dissipation capabilities and ease of mounting.
6. Applications: Commonly used in automotive, industrial, and consumer electronics for switching, power conversion, and motor control.
7. Thermal Performance: Designed to handle high power with efficient thermal characteristics due to its package and design.
8. Enhancement Mode: Operates as an enhancement mode MOSFET, turning on when a voltage is applied to the gate.
These features make the IPB014N06N a robust choice for various high-power and efficiency-demanding applications.
Pinout
The pin configuration is as follows:
1. Gate (G): This pin is used to turn the MOSFET on and off by applying the appropriate voltage level.
2. Drain (D): This is the main current-carrying terminal, where the load is connected.
3. Source (S): This is connected to the reference point in the circuit, typically ground.
The IPB014N06N is designed for low RDS(on) values, allowing for high efficiency and low power losses. It is suitable for various applications, including DC-DC converters, motor drives, and load switching.
Manufacturer
Application
1. Power Supply Units: Used in switched-mode power supplies for efficient power conversion.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in regulating voltage levels in electronic devices.
4. LED Drivers: Employed in systems that require consistent current for LED lighting.
5. Battery Management: Integrated in battery-powered devices for efficient load management.
6. Inverters: Used in solar inverters and other energy conversion equipment.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.