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IPB031N08N5ATMA1

Name: IPB031N08N5ATMA1
Rating: 4.8 (15 reviews)

+BOM

MOSFET N-CH 80V 120A D2PAK

メーカーインフィニオンテクノロジーズ
メーカー品番 #IPB031N08N5ATMA1
データシート IPB031N08N5ATMA1 DataSheet
パッケージ PG-TO-263
在庫状況5351

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Package / Case	Tape & Reel (TR),Cut Tape (CT)
Series	OptiMOS™
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain(Id) @ 25°C	120A (Tc)
Drive Voltage(Max Rds On Min Rds On)	6V, 10V
Rds On(Max) @ Id Vgs	3.1mOhm @ 100A, 10V
Vgs(th)(Max) @ Id	3.8V @ 108µA
Gate Charge(Qg)(Max) @ Vgs	87 nC @ 10 V
Vgs(Max)	±20V
Input Capacitance(Ciss)(Max) @ Vds	6240 pF @ 40 V
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3

概要

Description

The IPB031N08N5ATMA1 is an N-channel MOSFET from Infineon’s OptiMOS™ 5 series, designed for high-efficiency power applications.
### Key Features:
- Voltage Rating: 80V
- Current Rating: 120A (continuous)
- Low RDS(on): 3.1mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency operation
- Package: TO-263-7 (D2PAK) for efficient thermal performance
### Applications:
- DC-DC converters
- Motor drives
- Battery management systems
- Industrial power supplies
This MOSFET offers low conduction losses, high power density, and robust thermal performance, making it ideal for demanding automotive and industrial applications.

Equivalent

Equivalent products to IPB031N08N5ATMA1 (80V, 30A, N-channel MOSFET) include:
- IRLB3813PbF (80V, 30A, TO-220)
- STP80NF08 (80V, 30A, TO-220)
- AOD4184 (80V, 30A, TO-220)
- FDP8878 (80V, 30A, TO-220)
Check datasheets for exact specs before substitution.

Features

The IPB031N08N5ATMA1 is an N-channel MOSFET with the following key features:
- Voltage Rating: 80V
- Current Rating: 120A (continuous)
- Low On-Resistance (R_DS(on)): 3.1mΩ (max at V_GS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Package: TO-263-7 (D²PAK), suitable for power applications
- Logic Level Gate Drive: Compatible with 5V gate drive (V_GS(th) ~2V)
- Low Gate Charge (Q_G): Enhances switching performance
- AEC-Q101 Qualified: Automotive-grade reliability
Ideal for motor control, DC-DC converters, and power management in automotive/industrial systems.

Package

The IPB031N08N5ATMA1 is a power MOSFET in a TO-263-7 (D²PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in high-power applications like automotive and industrial systems. It has seven pins, with a compact design for better PCB space utilization.