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IPB60R099CPATMA1
+BOMMOSFET N-CH 600V 31A TO263-3
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPB60R099CPATMA1
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データシート IPB60R099CPATMA1 DataSheet
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パッケージ PG-TO-263
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在庫状況2983
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | CoolMOS™ |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 99mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 1.2mA |
| Gate Charge(Qg)(Max) @ Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2800 pF @ 100 V |
| Power Dissipation (Max) | 255W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
概要
Description
The IPB60R099CPATMA1 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is part of the CoolMOS™ C6 series, which is designed for high-efficiency power conversion applications. This MOSFET is particularly suitable for use in power supply units, as well as in various consumer electronics and industrial applications where efficiency and thermal performance are crucial.
Key features of the IPB60R099CPATMA1 include a low on-resistance of 0.099 ohms, which minimizes conduction losses, and a high voltage rating of 600 volts, making it apt for high-voltage applications. It also boasts fast switching capabilities, contributing to improved efficiency and reduced energy losses. The device is typically encapsulated in a TO-220 package, which is widely used for its balance of performance and ease of mounting on heat sinks for thermal management.
Overall, the IPB60R099CPATMA1 is valued for its reliability, efficiency, and performance, making it a preferred choice in designing energy-efficient electronic systems.
Key features of the IPB60R099CPATMA1 include a low on-resistance of 0.099 ohms, which minimizes conduction losses, and a high voltage rating of 600 volts, making it apt for high-voltage applications. It also boasts fast switching capabilities, contributing to improved efficiency and reduced energy losses. The device is typically encapsulated in a TO-220 package, which is widely used for its balance of performance and ease of mounting on heat sinks for thermal management.
Overall, the IPB60R099CPATMA1 is valued for its reliability, efficiency, and performance, making it a preferred choice in designing energy-efficient electronic systems.
Equivalent
The IPB60R099CPATMA1 is a power MOSFET produced by Infineon Technologies. Its equivalent products would be other N-channel MOSFETs with similar specifications, such as voltage rating, current capacity, and Rds(on). Some possible equivalents could include the STMicroelectronics STP60NF06 or Vishay's IRFZ44N. However, it's essential to check the datasheet for exact matching specifications to ensure compatibility in your specific application.
Features
The IPB60R099CPATMA1 is a power MOSFET from Infineon Technologies, designed for high efficiency in switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: The continuous drain current (I_D) is typically around 35A.
3. R_DS(on): The on-state resistance is low, approximately 99 mΩ, minimizing power loss and increasing efficiency.
4. Technology: This MOSFET utilizes CoolMOS™ C6 technology, which enhances power density and performance.
5. Package Type: It is available in a TO-220 package, which provides good thermal performance and is easy to mount on PCBs.
6. Applications: Suitable for various applications, including power supplies, lighting, and industrial applications.
7. Efficiency: Designed to offer high efficiency with reduced switching losses due to its fast switching capability.
These features make the IPB60R099CPATMA1 a reliable choice for designers looking to implement efficient power management solutions in their electronic systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: The continuous drain current (I_D) is typically around 35A.
3. R_DS(on): The on-state resistance is low, approximately 99 mΩ, minimizing power loss and increasing efficiency.
4. Technology: This MOSFET utilizes CoolMOS™ C6 technology, which enhances power density and performance.
5. Package Type: It is available in a TO-220 package, which provides good thermal performance and is easy to mount on PCBs.
6. Applications: Suitable for various applications, including power supplies, lighting, and industrial applications.
7. Efficiency: Designed to offer high efficiency with reduced switching losses due to its fast switching capability.
These features make the IPB60R099CPATMA1 a reliable choice for designers looking to implement efficient power management solutions in their electronic systems.
Pinout
The IPB60R099CPATMA1 is a power MOSFET from Infineon Technologies, part of the CoolMOS CP series. This particular model is designed for high voltage, high efficiency applications. It typically comes in a TO-220 package, which is a standard through-hole package for power semiconductors. The TO-220 package has three pins.
The pin functions for the IPB60R099CPATMA1 in a TO-220 package are as follows:
1. Gate (G): This pin controls the on/off state of the MOSFET by modulating the voltage applied to it.
2. Drain (D): The main current-carrying terminal, connected to the power supply or load.
3. Source (S): The terminal through which the current exits the MOSFET, typically connected to ground.
These pins are used to control and switch high power levels in electronic devices, making this MOSFET suitable for use in applications like SMPS (Switched-Mode Power Supplies) and other energy-efficient power conversion systems.
The pin functions for the IPB60R099CPATMA1 in a TO-220 package are as follows:
1. Gate (G): This pin controls the on/off state of the MOSFET by modulating the voltage applied to it.
2. Drain (D): The main current-carrying terminal, connected to the power supply or load.
3. Source (S): The terminal through which the current exits the MOSFET, typically connected to ground.
These pins are used to control and switch high power levels in electronic devices, making this MOSFET suitable for use in applications like SMPS (Switched-Mode Power Supplies) and other energy-efficient power conversion systems.
Manufacturer
The IPB60R099CPATMA1 is manufactured by Infineon Technologies. Infineon is a global semiconductor company based in Germany. It specializes in designing, manufacturing, and supplying a broad range of semiconductor solutions, including microcontrollers, sensors, and power semiconductors. Infineon's products are widely used across various industries, including automotive, industrial, consumer electronics, and security. The company is known for its focus on innovation, efficiency, and sustainability in semiconductor technology.
Application
The IPB60R099CPATMA1 is a power MOSFET commonly used in applications requiring efficient power management and high-speed switching. Key application areas include:
1. Switch-Mode Power Supplies (SMPS): Utilized in power conversion for industrial and consumer electronics.
2. Motor Drives: Applied in motor control systems for improved efficiency and performance.
3. Renewable Energy: Used in solar inverters and wind turbine systems for effective energy conversion.
4. Lighting: Implemented in LED drivers to enhance energy efficiency.
5. Uninterruptible Power Supplies (UPS): Ensures reliable power backup solutions.
Overall, it's suited for applications demanding high power density, reliability, and low energy loss.
1. Switch-Mode Power Supplies (SMPS): Utilized in power conversion for industrial and consumer electronics.
2. Motor Drives: Applied in motor control systems for improved efficiency and performance.
3. Renewable Energy: Used in solar inverters and wind turbine systems for effective energy conversion.
4. Lighting: Implemented in LED drivers to enhance energy efficiency.
5. Uninterruptible Power Supplies (UPS): Ensures reliable power backup solutions.
Overall, it's suited for applications demanding high power density, reliability, and low energy loss.
Package
The IPB60R099CPATMA1 is an Infineon Technologies power MOSFET, and it typically comes in a TO-220 package type, which is commonly used for mounting onto printed circuit boards and features three leads.
