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IPB60R380C6
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPB60R380C6
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データシート IPB60R380C6 DataSheet
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パッケージ D2PAK-3 (TO-263-3)
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在庫状況9141
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 10.6 A |
| Rds On - Drain-Source Resistance | 340 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 32 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 83 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 9 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 10 ns |
| Series | CoolMOS C6 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 110 ns |
| Typical Turn-On Delay Time | 15 ns |
| Width | 9.25 mm |
| Part # Aliases | IPB6R38C6XT SP000660634 IPB60R380C6ATMA1 |
| Unit Weight | 4 g |
| Package/Case | D2PAK-3 (TO-263-3) |
| Delivery Restrictions | Mouser does not presently sell this product in your region. |
概要
Description
Typically used in applications like switch-mode power supplies (SMPS), motor drives, and inverters, the IPB60R380C6 can help improve the performance of various electronic circuits. Additionally, its TO-220 package provides efficient heat dissipation, contributing to the reliability and longevity of the device in demanding environments.
Overall, the IPB60R380C6 is a versatile component for engineers and designers seeking efficient solutions in power management and electronic control systems.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current of up to 38A, providing robust current-carrying capability.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of around 0.38 ohms at a gate-source voltage (Vgs) of 10V, which enhances efficiency and reduces power losses.
4. Gate Threshold Voltage: The threshold voltage (Vgs(th)) is between 2V and 4V, allowing for easy drive requirements.
5. Fast Switching: It features fast switching speeds, making it ideal for applications such as power supplies, converters, and motor drives.
6. Package Type: Typically available in a TO-220 package, facilitating convenient heat dissipation and mounting in various designs.
Overall, the IPB60R380C6 is an excellent choice for efficient power management in demanding environments.
Pinout
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal connected to the ground or the lower potential in the circuit.
This MOSFET is designed for high-efficiency applications, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 38A. It is suitable for use in power supplies, motor drives, and other high-voltage switching applications. The low on-state resistance (R_DS(on)) enables reduced power losses and improved thermal performance.
Manufacturer
Application
1. Industrial Motor Drives: Used in control circuits for motors.
2. Power Supplies: Efficient in switch-mode power supplies (SMPS) and converters.
3. Automotive Applications: Utilized in electric vehicle powertrains and battery management systems.
4. Renewable Energy Systems: Employed in solar inverters and wind turbine controllers.
5. Heating Systems: Used in electronic heating applications.
6. Consumer Electronics: Implemented in high-efficiency power management systems.
Its high voltage and current ratings make it suitable for demanding applications.