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IPB64N25S3-20
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPB64N25S3-20
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在庫状況5342
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | IPB64N25 |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Part # Aliases | IPB64N25S32XT SP000876596 IPB64N25S320ATMA1 |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 0.139332 oz |
| Package / Case | D2PAK-3 (TO-263-3) |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 250 V |
| Id - Continuous Drain Current | 64 A |
| Rds On | 17.5 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 89 nC |
| Pd - Power Dissipation | 300 W |
| Channel Mode | Enhancement |
| Fall Time | 12 ns |
| Rise Time | 20 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 45 ns |
| Typical Turn - On Delay Time | 18 ns |
| Qualification | AEC-Q100 |
| REACH - SVHC | Details |
概要
Description
The IPB64N25S3-20 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage of 25V and a continuous drain current rating of 64A, making it suitable for various power management applications, including switch-mode power supplies, DC-DC converters, and motor drivers.
This MOSFET operates with low on-resistance, typically around 8.5 mΩ, which minimizes power loss and heat generation during operation. Its fast switching capabilities contribute to improved efficiency and performance in high-frequency applications. The device is housed in a DPAK package, which facilitates heat dissipation and ensures durability.
The IPB64N25S3-20 is ideal for applications requiring robust performance in compact designs, such as consumer electronics, automotive systems, and industrial equipment. Its reliability and efficiency make it a popular choice among engineers seeking to optimize power delivery in various circuits.
This MOSFET operates with low on-resistance, typically around 8.5 mΩ, which minimizes power loss and heat generation during operation. Its fast switching capabilities contribute to improved efficiency and performance in high-frequency applications. The device is housed in a DPAK package, which facilitates heat dissipation and ensures durability.
The IPB64N25S3-20 is ideal for applications requiring robust performance in compact designs, such as consumer electronics, automotive systems, and industrial equipment. Its reliability and efficiency make it a popular choice among engineers seeking to optimize power delivery in various circuits.
Equivalent
The IPB64N25S3-20 is an N-channel MOSFET. Equivalent products include the IRF3205, FDS6680, and STP75NF75. Always verify specifications such as voltage, current ratings, and Rds(on) to ensure compatibility for your specific application.
Features
The IPB64N25S3-20 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 250V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of 64A, making it effective for handling substantial loads.
3. RDS(on): Low on-resistance (typically around 20mΩ at Vgs = 10V), which minimizes power loss and increases efficiency.
4. Gate Threshold Voltage: Vgs(th) typically ranges from 2V to 4V, allowing for efficient switching.
5. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in power supplies and motor controllers.
6. Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
7. Thermal Resistance: Low thermal resistance enhances heat dissipation, improving reliability.
Overall, the IPB64N25S3-20 is well-suited for use in power electronics, automotive, and industrial applications.
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 250V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of 64A, making it effective for handling substantial loads.
3. RDS(on): Low on-resistance (typically around 20mΩ at Vgs = 10V), which minimizes power loss and increases efficiency.
4. Gate Threshold Voltage: Vgs(th) typically ranges from 2V to 4V, allowing for efficient switching.
5. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in power supplies and motor controllers.
6. Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
7. Thermal Resistance: Low thermal resistance enhances heat dissipation, improving reliability.
Overall, the IPB64N25S3-20 is well-suited for use in power electronics, automotive, and industrial applications.
Pinout
The IPB64N25S3-20 is an N-channel MOSFET from Infineon Technologies. It features a pin count of 5. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's operation, turning it on or off.
2. Drain (D): The terminal where the output current flows out; connected to the load.
3. Source (S): The terminal where the output current enters; typically connected to ground in low-side switching applications.
4. Body Diode (integrated): Provides a path for current when the MOSFET is off, allowing reverse current flow.
5. Thermal Pad: Used for heat dissipation; not a pin but crucial for thermal management.
The device is designed for applications requiring high efficiency and low on-resistance, making it suitable for power management and switching applications.
1. Gate (G): Controls the MOSFET's operation, turning it on or off.
2. Drain (D): The terminal where the output current flows out; connected to the load.
3. Source (S): The terminal where the output current enters; typically connected to ground in low-side switching applications.
4. Body Diode (integrated): Provides a path for current when the MOSFET is off, allowing reverse current flow.
5. Thermal Pad: Used for heat dissipation; not a pin but crucial for thermal management.
The device is designed for applications requiring high efficiency and low on-resistance, making it suitable for power management and switching applications.
Manufacturer
The IPB64N25S3-20 is manufactured by Infineon Technologies, a global semiconductor company. Infineon is headquartered in Neubiberg, Germany, and specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power semiconductors, microcontrollers, sensors, and security solutions, playing a key role in enabling energy efficiency and smart technologies. Infineon is recognized for its commitment to innovation and sustainability, contributing to advancements in areas such as electric mobility, renewable energy, and the Internet of Things (IoT).
Application
The IPB64N25S3-20 is an N-channel power MOSFET commonly used in various applications, including:
1. Power Supply Circuits: As a switch in DC-DC converters and power management systems.
2. Motor Drives: For controlling electric motors in automotive and industrial applications.
3. Inverter Systems: In solar inverters and UPS systems for efficient energy conversion.
4. Lighting Controls: In LED driver circuits for efficient dimming and control.
5. Consumer Electronics: In power management for devices like laptops and smartphones.
Its high voltage and current ratings make it suitable for demanding applications.
1. Power Supply Circuits: As a switch in DC-DC converters and power management systems.
2. Motor Drives: For controlling electric motors in automotive and industrial applications.
3. Inverter Systems: In solar inverters and UPS systems for efficient energy conversion.
4. Lighting Controls: In LED driver circuits for efficient dimming and control.
5. Consumer Electronics: In power management for devices like laptops and smartphones.
Its high voltage and current ratings make it suitable for demanding applications.
Package
The IPB64N25S3-20 is packaged in a TO-220 format. This type of package is commonly used for power devices, providing good thermal performance and allowing for efficient heat dissipation.
