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IPB80N06S2-08
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPB80N06S2-08
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データシート IPB80N06S2-08 DataSheet
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在庫状況4130
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 1000 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 80 A |
| Rds On | 7.7 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 215 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 14 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 32 ns |
| Typical Turn - On Delay Time | 14 ns |
| Width | 9.25 mm |
| Part # Aliases | SP000218830 IPB80N06S208ATMA1 |
| Unit Weight | 0.139332 oz |
概要
Description
The IPB80N06S2-08 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It is manufactured by Infineon Technologies and is part of the company's OptiMOS™ series, which is known for high efficiency and performance. This specific MOSFET has a maximum drain-source voltage (VDS) of 60V and can handle a continuous drain current (ID) of up to 80A, making it suitable for various applications such as power management, motor control, and DC-DC converters.
The low on-resistance (RDS(on)) ensures minimal power loss during operation, enhancing overall system efficiency. Its fast switching capabilities allow for improved performance in high-frequency applications. The IPB80N06S2-08 typically comes in a TO-220 package, facilitating heat dissipation and easier mounting on PCBs. Overall, it represents a reliable choice for engineers seeking efficient power management solutions in their designs.
The low on-resistance (RDS(on)) ensures minimal power loss during operation, enhancing overall system efficiency. Its fast switching capabilities allow for improved performance in high-frequency applications. The IPB80N06S2-08 typically comes in a TO-220 package, facilitating heat dissipation and easier mounting on PCBs. Overall, it represents a reliable choice for engineers seeking efficient power management solutions in their designs.
Equivalent
The IPB80N06S2-08 is an N-channel MOSFET. Equivalent products include the IRF3205, FDD844P, STP80NF06, and BSS140. When selecting a substitute, ensure that the voltage, current ratings, R_DS(on), and package type match your application requirements. Always check the datasheets for specific characteristics and ratings.
Features
The IPB80N06S2-08 is a N-channel MOSFET designed for high efficiency and performance in power applications. Key features include:
1. Voltage Rating: 60V maximum drain-source voltage (V_DS).
2. Current Rating: A continuous drain current (I_D) of up to 80A, allowing for high power handling.
3. Low On-Resistance: With a typical R_DS(on) of around 9.5 mΩ at a gate voltage of 10V, it provides minimal conduction losses.
4. Fast Switching Speed: Optimized for rapid turn-on and turn-off, enhancing efficiency in switching applications.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V to 4V, making it suitable for a variety of driving voltages.
6. Package: Available in a TO-220 package, facilitating easy heat dissipation.
7. Applications: Commonly used in power supplies, motor drivers, and DC-DC converters.
These features make the IPB80N06S2-08 an excellent choice for demanding electronic circuits requiring efficient, high-current switching.
1. Voltage Rating: 60V maximum drain-source voltage (V_DS).
2. Current Rating: A continuous drain current (I_D) of up to 80A, allowing for high power handling.
3. Low On-Resistance: With a typical R_DS(on) of around 9.5 mΩ at a gate voltage of 10V, it provides minimal conduction losses.
4. Fast Switching Speed: Optimized for rapid turn-on and turn-off, enhancing efficiency in switching applications.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V to 4V, making it suitable for a variety of driving voltages.
6. Package: Available in a TO-220 package, facilitating easy heat dissipation.
7. Applications: Commonly used in power supplies, motor drivers, and DC-DC converters.
These features make the IPB80N06S2-08 an excellent choice for demanding electronic circuits requiring efficient, high-current switching.
Pinout
The IPB80N06S2-08 is an N-channel MOSFET, typically used in power management applications. It has a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the return path in the circuit. Current flows from the source to the drain when activated.
The IPB80N06S2-08 is rated for a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of 80A, making it suitable for high-power applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the return path in the circuit. Current flows from the source to the drain when activated.
The IPB80N06S2-08 is rated for a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of 80A, making it suitable for high-power applications.
Manufacturer
The IPB80N06S2-08 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in designing and manufacturing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and security solutions. Infineon serves various industries, including automotive, industrial, communications, and consumer electronics. The company is known for its innovations in power management and energy efficiency technologies, playing a pivotal role in enabling the transition to energy-efficient systems and sustainable energy solutions.
Application
The IPB80N06S2-08 is an N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies - For efficient voltage regulation and conversion.
2. DC-DC Converters - In both buck and boost configurations.
3. Motor Control - For driving electric motors in automotive and industrial applications.
4. LED Drivers - In lighting solutions for efficient power control.
5. Power Distribution - In energy systems for load management.
6. Battery Management Systems - For efficient charging and discharging of batteries.
Its high current capacity and low on-resistance make it suitable for these applications.
1. Switching Power Supplies - For efficient voltage regulation and conversion.
2. DC-DC Converters - In both buck and boost configurations.
3. Motor Control - For driving electric motors in automotive and industrial applications.
4. LED Drivers - In lighting solutions for efficient power control.
5. Power Distribution - In energy systems for load management.
6. Battery Management Systems - For efficient charging and discharging of batteries.
Its high current capacity and low on-resistance make it suitable for these applications.
Package
The IPB80N06S2-08 is packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is commonly used for power MOSFETs to facilitate efficient thermal management and mounting on heatsinks.
