画像は参考用です
IPD60R360PFD7S
+BOM-
メーカーインフィニオンテクノロジーズ
-
メーカー品番 #IPD60R360PFD7S
-
データシート IPD60R360PFD7S DataSheet
-
在庫状況6601
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
概要
Description
The MOSFET is built using advanced silicon technology to minimize conduction and switching losses, making it suitable for high-frequency applications. Its compact package allows for easier thermal management and PCB integration. The IPD60R360PFD7S is popular in industrial and automotive applications due to its robustness and efficiency.
This device is characterized by low on-resistance and high-speed switching capabilities, which contribute to reduced energy consumption and improved system efficiency. Overall, it is an essential component for modern power electronics design.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of 60A at a specified temperature, ensuring robust performance under load.
3. Low R_DS(on): The on-resistance is low, typically around 0.36 ohms, which results in reduced power losses and improved efficiency.
4. Fast Switching: Optimized for fast switching speeds, enabling effective operation in switching applications, such as converters and inverters.
5. Thermal Performance: The device has a low thermal resistance, enhancing heat dissipation and reliability.
6. Package Type: It comes in a DPAK package, facilitating easy mounting and thermal management.
These features make the IPD60R360PFD7S ideal for power management applications, including industrial drives, power supplies, and renewable energy systems.
Pinout
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The main terminal where the current flows out of the MOSFET when it is on.
3. Source (S): The terminal where the current enters the MOSFET.
This device is noted for its low on-resistance and high efficiency, making it suitable for various applications in power management and conversion.